SIDC05D60C6 Fast switching diode chip in EMCON 3 -Technology FEATURES: * 600V EMCON 3 technology 70 m chip * soft, fast switching * low reverse recovery charge * small temperature coefficient A This chip is used for: * power module * discrete components C Applications: * drives * white goods * resonant applications Chip Type VR IF Die Size Package SIDC05D60C6 600V 15A 2.37 x 1.9 mm2 sawn on foil MECHANICAL PARAMETER: Raster size 2.37 x 1.9 Area total / active 4.5 / 2.88 Anode pad size mm 2 1.95 x 1.48 Thickness 70 m Wafer size 150 mm Flat position 180 deg Max. possible chips per wafer 3276 pcs Passivation frontside Photoimide Anode metallization 3200 nm AlSiCu Cathode metallization Die bond Wire bond Reject ink dot size Recommended storage environment Ni Ag -system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, 500m 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23C Edited by INFINEON Technologies, AIM PMD D CID CLS, L4531M, Edition 1.1, 10.07.2006 SIDC05D60C6 Maximum Ratings Parameter Symbol Repetitive peak reverse voltage VRRM Continuous forward current limited by Tjmax Maximum repetitive forward current limited by Tjmax Operating junction and storage temperature 1) Condition Value 600 Unit V 1) IF A IFRM 30 Tj , Ts t g -40...+175 C depending on thermal properties of assembly Static Electrical Characteristics (tested on chip), Tj=25 C, unless otherwise specified Parameter Symbol Conditions Value min. Reverse leakage current IR V R = 600V Tj= 2 5 C Cathode-Anode breakdown Voltage V Br I R = 0 . 2 5 mA Tj= 2 5 C 600 Forward voltage drop VF I F= 1 5 A Tj= 2 5 C 1.25 Typ. max. 27 Unit A V 1.6 1.95 V Dynamic Electrical Characteristics (verified by design/characterization), inductive load Parameter Peak reverse recovery current Symbol Conditions I F =15A IRM di/dt=1600A/ s V R =300V V GE = - 1 5 V I F =15A Recovered charge Qr di/dt=1600A/ s V R =300V V GE = - 1 5 V I F =15A Reverse recovery energy E rec di/dt=1600A/ s V R =300V V GE = - 1 5 V 2) Value min. 2) Typ. T j = 25 C 23.0 Tj = 125 C 25.0 Tj = 150 C 26.0 T j = 25 C 0.80 Tj = 125 C 1.40 Tj = 150 C 1.70 T j = 25 C 0.16 Tj = 125 C 0.28 Tj = 150 C 0.37 values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies, AIM PMD D CID CLS, L4531M, Edition 1.1, 10.07.2006 max. Unit A C mJ SIDC05D60C6 CHIP DRAWING: Edited by INFINEON Technologies, AIM PMD D CID CLS, L4531M, Edition 1.1, 10.07.2006 SIDC05D60C6 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet FS15R06XE3 Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pruffeld Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM PMD D CID CLS, L4531M, Edition 1.1, 10.07.2006