SIDC05D60C6
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4531M, Edition 1.1, 10.07.2006
Fast switching diode chip in EMCON 3 -Technology
This chip is used for:
• power module
• discrete components
FEATURES:
• 600V EMCON 3 technology 70 µm chip
• soft, fast switching
• low reverse recovery charge
• small temperature coefficient
Applications:
• drives
• white goods
• resonant applications
A
C
Chip Type VR IF Die Size Package
SIDC05D60C6 600V 15A 2.37 x 1.9 mm2 sawn on foil
MECHANICAL PARAMETER:
Raster size 2.37 x 1.9
Area total / active 4.5 / 2.88
Anode pad size 1.95 x 1.48
mm2
Thickness 70 µm
Wafer size 150 mm
Flat position 180 deg
Max. possible chips per wafer 3276 pcs
Passivation frontside Photoimide
Anode metallization 3200 nm AlSiCu
Cathode metallization Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond electrically conductive glue or solder
Wire bond Al, ≤500µm
Reject ink dot size ∅ 0.65mm; max 1.2mm
Recommended storage environment store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
SIDC05D60C6
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4531M, Edition 1.1, 10.07.2006
Maximum Ratings
Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage VRRM 600 V
Continuous forward current limited by
Tjmax IF
1 )
Maximum repetitive forward current
limited by Tjmax IFRM 30 A
Operating junction and storage
temperature Tj , Tstg -40...+175 °C
1 ) depending on thermal properties of assembly
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Value
Parameter Symbol Conditions min. Typ. max. Unit
Reverse leakage current IR VR=600V Tj=25°C 27 µA
Cathode-Anode
breakdown Voltage VBr IR=0.25mA Tj=25°C 600 V
Forward voltage drop VF IF=15A Tj=25°C 1.25 1.6 1.95 V
Dynamic Electrical Characteristics (verified by design/characterization), inductive load
Value 2)
Parameter Symbol Conditions min. Typ. max. Unit
Peak reverse recovery
current IRM
IF=15A
di/dt=1600A/µs
VR=300V
VGE= -15V
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
23.0
25.0
26.0 A
Recovered charge
Qr
IF=15A
di/dt=1600A/µs
VR=300V
VGE= -15V
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
0.80
1.40
1.70 µC
Reverse recovery energy
Erec
IF=15A
di/dt=1600A/µs
VR=300V
VGE= -15V
Tj = 25 °C
Tj = 125 °C
Tj = 150 °C
0.16
0.28
0.37 mJ
2) values also influenced by parasitic L- and C- in measurement and package.
SIDC05D60C6
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4531M, Edition 1.1, 10.07.2006
CHIP DRAWING:
SIDC05D60C6
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4531M, Edition 1.1, 10.07.2006
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet FS15R06XE3
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
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