HIGH POWER NPN POWER TRANSISTORS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch- ing applications. Features: e Forward biased second breakdown current capability IS/b = 3.75 Adc @ VCE = 40 Vde maximum ratings (T, = 25C) (unless otherwise specified) 2N3771 30 AMP, 150 WATTS 40 VOLTS NPN COLLECTOR BASE EMITTER CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.845(21.47} 065(1.65 pe ) DIA MAX i p= .368(9.09) MAX mf SEATING PLANE 0.043(1.09) oa | je L 426(10.82) MIN 0.038(0.97) 1 050(26.68) MAX ="") 0.675(17.18) I 0.650(18.51) * j ote CASE TEMP 4 ys 1.197(30.40) REFERENCE \ | 1177(29.90) POINT 20(5.00) - EMITTER 1.573(39.96) MAX 0.162(4.09) Bia 0.15(3.84) 2 HOLES 0.440011 18) 0.420(10.67) aase 7 | | 0.22515 72) GOLLECTOR 0.205{5 21) (CASE) RATING SYMBOL 2N3771 UNITS Collector-Emitter Voltage VcEO 40 Volts Collector-Base Voltage VoBo 50 Volts Emitter Base Voltage VEBO 5 Volts Collector Current -- Continuous Io 30 A Peak lom 30 Base Current Continuous lp 1 A Total Power Dissipation @ Tc = 25C Pp 150 Watts Derate above 25C 0.855 w/c Operating and Storage Junction Temperature Range Ty, Tsta -65 to +200 C thermal characteristics Thermal Resistance, Junction to Case Rac 1.17 C/W Maximum Lead Ternperature for Soldering Purposes: % from Case for 5 Seconds TL 260 C 799 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP MAX | UNIT | off characteristics Collector-Emitter Sustaining Voltage (Io = .2A) . VCEO(sus) 40 _ Volts Collector-Emitter Sustaining Voltage (Ic = .2A, Veg = -1.5V, Ree = 100 Ohms) VCEX 50 _ Volts Collector Cutoff Current (Vos = 50V) IcBo _ _ 2 mA Collector Cutoff Current (VcE = 30V) IcEO _ _ 10 mA Emitter Cutoff Current (Vep = 5V) _ _ _ 5 mA second breakdown | Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 3 on characteristics DC Current Gain hee (Ig = 15A, Voce = 4V) 15 60 (Ic = 380A, Voge = 4V) 5 _ _ Collector-Emitter Saturation Voltage VcE(sat) (Io = 15A, Ig = 1.5A) _ 2 Vv (Io = 30A, Ig = 6A) _ _ 4 V Base-Emitter Voltage VBE(on) (Ic = 15A, Vcg = 4V) 2.7 V geo: an o w& 200 175 180 125 rs) OSC (ty = F(t) BUS yc = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME @t1 TJ(pk) TC = Pipk) BUCtt) 2 2 e s & 8 DUTY CYCLE, D= ty/t2 ie 0.02 005 01 02 OS 10 20 50 10 20 50 100 200 500 1000 2000 TIME (ms) 76 2 2 o Pp, POWER DISSIPATION (WATTS) 2 8 2 2 EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 125 Tc, CASE TEMPERATURE (C) FIGURE 1 POWER DERATING FIGURE 2- THERMAL RESPONSE 800 ic, COLLECTOR CURRENT (AMP) t, TIME (us) 40 TI THT 2N3771 NOTTN IN 40 NIN OST NON Ne | 20 tet \ X\ \ XN * q IN TINC TN | 200 us df SKIN 10 TS 1.0 ms-4 Te = 25C CN 30 ms 7.0f = = = BONDING WIRE LIMITED h\}h- i it pom mm mm THERMALLY LIMITED (-T~ ~ ms + 5.0F (SINGLE PULSE} +- | nm SECOND BREAKDOWN LIMITED _| sy | | | CURVES APPLY BELOW RATED Veg [\ 3.0 F-SULSE CURVES APPLY 2N3771 4 FOR ALL DEVICES 2.0 anaes L i 1.0 20 30 50 7.0 10 20 30 50 70 100 Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 3 ACTIVE-REGION SAFE OPERATING AREA 10 Vcc = 30V 5.0 Ic/tg = 10 Ty = 25C ~~ VBE (off) = 2.0 10 05 0.2 01 0.05 0.02 0.01 03 OS O7 10 20 30 50 7.0 20. 30 tc. COLLECTOR CURRENT (AMP) FIGURE 5 TURN-ON TIME 2000 1000 3 C, CAPACITANCE (pF) ad s 300 200 02 05 1.0 vec +30V 25 us Re "y SCOPE RB avL_I -9.0V } 51 nC ty, tes tO ns = = DUTY CYCLE = 1.0% -4V Rg ANO Rc ARE VARIED TO, OBTAIN DESIRED CURRENT LEVELS Dy MUST BE FAST RECOVERY TYPE, eg: MBD5300 USED ABOVE Ig ~100 mA MSD6100 USED BELOW tg +100 mA FIGURE 4 SWITCHING TIME TEST CIRCUIT t, TIME (us) 0305 1.0 20.30 50 70 10 20 30 Ic, COLLECTOR CURRENT (AMP) FIGURE.6 TURN-OFF TIME 2.0 5.0 20 Vr, REVERSE VOLTAGE (VOLTS) FIGURE 7 CAPACITANCE 801 500 300 Ty = 150C 200 25C 100 70 50 30 20 10 Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) ao ooo .3 05 07 1.0 2.0 3.0 50 70 10 2030 Ic, COLLECTOR CURRENT (AMP) FIGURE 8 DC CURRENT GAIN 802 2.0 0.4 0 0.01 0.02 005 Of 02 05 .10 20 5.0 Ic, COLLECTOR CURRENT (AMP) FIGURE 9 COLLECTOR SATURATION REGION 10