2007-04-261
BCM846S
1
623
54
NPN Silicon AF Transistor Array
• Precision matched transistor pair: ∆IC ≤ 10%
• For current mirror applications
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated Transistors
• Complementary type: BCM856S
• BCM846S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
EHA07178
654
321
C1 B2 E2
C2B1E1
TR1 TR2
Type Marking Pin Configuration Package
BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 65 V
Collector-emitter voltage VCES 80
Collector-base voltage VCBO 80
Emitter-base voltage VEBO 6
Collector current IC100 mA
Peak collector current ICM 200
Total power dissipation-
TS = 115 °C Ptot 250 mW
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
1Pb-containing package may be available upon special request
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2007-04-262
BCM846S
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 140 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 A V(BR)CEO 65 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 A V(BR)CBO 80 - -
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0 A V(BR)CES 80 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 A V(BR)EBO 6 - -
Collector-base cutoff current
VCB = 30 V, IE = 0 A
VCB = 30 V, IE = 0 A, TA = 150 °C
ICBO
-
-
-
-
0.015
5
µA
DC current gain-2)
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
hFE
-
200
250
290
-
450
-
Collector-emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
-
-
90
200
300
650
mV
Base emitter saturation voltage2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
-
700
900
-
-
Base-emitter voltage-2)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
580
-
660
-
700
770
Matching
IB = 1 µA, VCE1 = VCE2 = 1.0V
IB = 100 µA, VCE1 = VCE2 = 1.0V
∆IC
-10
-10
-
-
10
10
%
1For calculation of RthJA please refer to Application Note Thermal Resistance
2Puls test: t < 300µs; D < 2%
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2007-04-263
BCM846S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz fT- 250 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 0.95 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - 9 -
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz h11e - 4.5 - kΩ
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz h12e - 2 - 10-4
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz h21e - 330 - -
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz h22e - 30 - µS
Noise figure
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ
F- - 10 dB
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2007-04-264
BCM846S
DC current gain hFE = ƒ(IC)
VCE = 5V
10 10 10 10
EHP00365
h
mA
-2 -1 12
FE
3
10
10
2
0
10
5
5
10
1
0
10
5
555
100
25
-50
Ι
C
C
C
C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 20
10 0
EHP00367
VCEsat
10
mA
10
Ι
C
10
2
1
0
-1
5
5
V
0.3 0.5
100
25
-50
0.1 0.2 0.4
C
C
C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 20
0
10
EHP00364
BEsat
V
0.6 V 1.2
-1
10
0
10
1
2
10
5
5
Ι
C
mA
0.2 0.4 0.8
C
25
C
100
C
-50
C
Output characteristics IC = ƒ(VCE),
IB = parameter
0123V5
VCE
0
1
2
3
4
5
6
7
8
9
10
11
12
mA
15
IC
IB = 8 uA
IB = 12 uA
IB = 16 uA
IB = 20 uA
IB = 24 uA
IB = 28 uA
IB = 36 uA
IB = 4uA
IB = 32 uA
IB = 40 uA
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2007-04-265
BCM846S
Collector current IC = ƒ(VBE)
0.4 0.5 0.6 0.7 0.8 V1
VBE
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
A
IC
1 V5 V
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
10 0 50 100 150
EHP00381
TA
5
10
10
nA
10
Ι
CB0
5
5
5
10
10
4
3
2
1
0
-1
max
typ
C
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10 10 10 10
EHP00363
f
mA
MHz
-1 0 1 2
5
T
3
10
102
1
10
5
5
5
Ι
C
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
)
0
1
2
3
4
5
6
7
8
9
10
pF
12
CCB(CEB)
CCB
CEB
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2007-04-266
BCM846S
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
25
50
75
100
125
150
175
200
225
250
mW
300
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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2007-04-267
BCM846S
Definition of matching
∆IC = (IC2-IC1)/IC1
# "$
!
8 ? A 8 ? A
1 ? 1 ?
6 6
1 >
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2007-04-268
BCM846S
Package SOT363
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
Pin 1 marking
Laser marking
0.3
0.70.9
0.65
0.65
1.6
0.2
4
2.15 1.1
8
2.3
Pin 1
marking
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
0.15
±0.1
1.25
0.1 MAX.
0.9
±0.1
A
-0.05
6x 0.1
M
0.650.65
2.1
±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking
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2007-04-269
BCM846S
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
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