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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. SGL160N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. * * * * High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A High input impedance CO-PAK, IGBT with FRD: trr = 75nS (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies. C G TO-264 G C Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL E E TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC =100C @ TC = 25C @ TC = 100C SGL160N60UFD 600 20 160 80 300 25 280 250 100 -55 to +150 -55 to +150 Units V V A A A A A W W C C 300 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (c)2002 Fairchild Semiconductor Corporation Typ. ---- Max. 0.5 0.83 25 Units C/W C/W C/W SGL160N60UFD Rev. B1 SGL160N60UFD IGBT C Symbol Parameter = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 100 uA nA IC = 80mA, VCE = VGE IC = 80A, VGE = 15V IC = 160A, VGE = 15V 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 5000 600 200 ---- pF pF pF ------------------- 40 101 90 75 2500 1760 4260 45 105 140 122 2785 3100 5885 345 60 95 18 --130 150 --5000 --200 250 ---520 100 150 -- ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH Min. -- Typ. 1.4 Max. 1.7 Units -- 1.3 -- Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance VCC = 300 V, IC = 80A, RG = 3.9, VGE=15V Inductive Load, TC = 25C VCC = 300 V, IC = 80A, RG = 3.9, VGE = 15V Inductive Load, TC = 125C VCE = 300 V, IC = 80A, VGE = 15V Measured 5mm from PKG Electrical Characteristics of DIODE T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge (c)2002 Fairchild Semiconductor Corporation = 25C unless otherwise noted Test Conditions TC = 25C IF = 25A TC = 100C IF = 25A, di/ dt = 200 A/us TC = 25C -- 50 95 TC = 100C -- 105 -- TC = 25C -- 4.5 10 TC = 100C -- 8.5 -- TC = 25C -- 112 375 TC = 100C -- 420 -- V ns A nC SGL160N60UFD Rev. B1 SGL160N60UFD Electrical Characteristics of the IGBT T 20V Common Emitter T C = 25 240 15V 12V Collector Current, I C [A] Collector Current, I C [A] Common Emitter V GE = 15V T C = 25 T C = 125 200 400 V GE = 10V 300 200 100 160 120 80 40 0 0 0 2 4 6 8 0.5 Collector - Emitter Voltage, VCE [V] 1 10 Collector - Emitter Voltage, V CE [V] Fig 2. Typical Saturation Voltage Characteristics Fig 1. Typical Output Characteristics 120 4 V CC = 300V Load Current : peak of square wave Common Emitter VGE = 15V 100 160A 3 Load Current [A] Collector - Emitter Voltage, VCE [V] SGL160N60UFD 500 80A 2 IC = 40A 80 60 40 1 20 Duty cycle : 50% T C = 100 Power Dissipation = 130W 0 0 0 30 60 90 120 0.1 150 1 Case Temperature, TC [] 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter T C = 25 Common Emitter TC = 125 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V] 1000 Frequency [KHz] 16 12 8 160A 4 80A IC = 40A 0 16 12 8 160A 4 80A IC = 40A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE (c)2002 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 7. Saturation Voltage vs. VGE SGL160N60UFD Rev. B1 1000 Common Emitter VGE = 0V, f = 1MHz T C = 25 7000 Cies Common Emitter VCC = 300V, VGE = 15V IC = 80A TC = 25 TC = 125 Switching Time [ns] Capacitance [pF] 6000 5000 4000 3000 Coes 2000 Ton Tr 100 Cres 1000 0 1 20 10 1 30 10 Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 2000 10000 Common Emitter V CC = 300V, VGE = 15V IC = 80A T C = 25 T C = 125 Common Emitter V CC = 300V, V GE = 15V IC = 80A T C = 25 T C = 125 Toff Tf 100 Eon Switching Loss [uJ] Switching Time [ns] 1000 Tf Eoff Eoff 1000 30 1 10 1 80 10 Gate Resistance, R G [ ] 80 Gate Resistance, R G [ ] Fig 10. Switching Loss vs. Gate Resistance Fig 9. Turn-Off Characteristics vs. Gate Resistance 1000 Switching Time [ns] 500 Switching Time [ns] 80 Gate Resistance, R G [ ] Collector - Emitter Voltage, VCE [V] 100 Ton Common Emitter V CC = 300V, V GE = 15V RG = 3.9 T C = 25 T C = 125 Tr Common Emitter VCC = 300V, V GE = 15V RG = 3.9 TC = 25 TC = 125 Toff Toff 100 Tf Tf 20 10 20 40 60 80 100 120 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current (c)2002 Fairchild Semiconductor Corporation 140 160 20 40 60 80 100 120 140 160 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGL160N60UFD Rev. B1 SGL160N60UFD 8000 15 Common Emitter V CC = 300V, V GE = 15V RG = 3.9 T C = 25 T C = 125 Gate - Emitter Voltage, VGE [ V ] Switching Loss [uJ] 10000 SGL160N60UFD 20000 1000 Eoff Common Emitter RL = 37.5 T C = 25 12 9 300 V 6 200 V VCC = 100 V 3 Eon 0 100 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 350 Gate Charge, Qg [ nC ] Collector Current, IC [A] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 1000 500 100 IC MAX. (Continuous) 50us 100us 1 10 DC Operation Single Nonrepetitive Pulse T C = 25 Curves must be derated linearly with increase in temperature 1 0.1 0.3 100 Collector Current, IC [A] Collector Current, I C [A] IC MAX. (Pulsed) 10 Safe Operating Area o V GE=20V, T C=100 C 1 10 100 1 1000 1 10 Collector-Emitter Voltage, V CE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristic Fig 16. Turn-Off SOA Characteristics 1 Thermal Response [Zthjc] 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Pdm 0.01 t1 single pulse t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT (c)2002 Fairchild Semiconductor Corporation SGL160N60UFD Rev. B1 Reverse Recovery Current, Irr [A] Forward Current, I F [A] 100 10 V R = 200V IF = 25A T C = 25 T C = 100 10 1 1 0 1 2 100 3 Fig 19. Reverse Recovery Current Fig 18. Forward Characteristics 120 1000 VR = 200V IF = 25A TC = 25 TC = 100 Reverce Recovery Time, t rr [ns] Stored Recovery Charge, Q rr [nC] 1000 di/dt [A/us] Forward Voltage Drop, V F [V] 800 SGL160N60UFD 100 T C = 25 T C = 100 600 400 200 0 VR = 200V IF = 25A TC = 25 TC = 100 100 80 60 40 20 100 1000 di/dt [A/us] Fig 20. Stored Charge (c)2002 Fairchild Semiconductor Corporation 100 1000 di/dt [A/us] Fig 21. Reverse Recovery Time SGL160N60UFD Rev. B1 SGL160N60UFD Package Dimension (8.30) (1.00) (2.00) (7.00) 20.00 0.20 2.50 0.10 4.90 0.20 (1.50) (1.50) 2.50 0.20 3.00 0.20 (1.50) 20.00 0.50 (7.00) (2.00) (11.00) 1.50 0.20 ) .20 .00 0 0 0) 2.0 (R (R1 (0.50) o3.3 (9.00) (9.00) (8.30) (4.00) 20.00 0.20 6.00 0.20 TO-264 +0.25 1.00 -0.10 +0.25 0.60 -0.10 2.80 0.30 (2.80) 5.45TYP [5.45 0.30] (0.15) (1.50) 3.50 0.20 5.00 0.20 5.45TYP [5.45 0.30] Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation SGL160N60UFD Rev. B1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. 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