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Is Now Part of
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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2002 Fairchild Semiconductor Corporation SGL160N60UFD Rev. B1
IGBT
SGL160N60UFD
SGL160N60UFD
Ultraf ast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A
• High input impedance
• CO-PAK , IGB T with FRD: trr = 75nS (typ.)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteris ti cs
Symbol Description SGL160N60UFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C 160 A
Collector Current @ TC = 100°C80 A
ICM (1) Pulsed Collector Current 300 A
IFDiode Continuous Forward Current @ TC =100°C25 A
IFM Diode Maximum Forward Current 280 A
PDM a x i m u m P o w e r D issi p a t i o n @ T C = 25°C 250 W
Maximum Power Dissipation @ TC = 100°C 100 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Juncti on-to-Case -- 0.5 °C/W
RθJC(DIOD E) Thermal Resistance, Junction-to- Case -- 0.83 °C/W
RθJA Thermal Resistance, Junction-to- Am bient -- 25 °C/W
Applications
AC & DC motor controls, general purpose inverters, robotics , servo controls, and power supplies.
TO-264
GCE
G
C
E
G
C
E
SGL160N60UFD Rev. B1
SGL160N60UFD
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Electric al Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Of f Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteri st ics
VGE(th) G-E Threshold Volt age IC = 80mA, VCE = VGE 3.5 4.5 6.5 V
VCE(sat) Collector to Emitter
Saturation V oltage IC = 80A, VGE = 15V -- 2.1 2.6 V
IC = 160A, VGE = 15V -- 2.6 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1M H z
-- 5000 -- pF
Coes Output Capacitance -- 600 -- pF
Cres Reverse Transfer Capacitance -- 200 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 300 V, IC = 80A,
RG = 3.9Ω, VGE=15V
Inductive Load, TC = 25°C
-- 40 -- ns
trRise Time -- 101 -- ns
td(off) Turn-Off De l a y Time -- 90 130 n s
tfFall Time -- 75 150 ns
Eon Turn- On Switching Loss -- 2500 -- uJ
Eoff Turn-Off Swi tchi ng Loss -- 1760 -- uJ
Ets Total Switching Loss -- 4260 5000 uJ
td(on) Turn-On Delay Time
VCC = 300 V, IC = 80A,
RG = 3.9Ω, VGE = 15V
Inductive Load, TC = 125°C
-- 45 -- ns
trRise Time -- 105 -- ns
td(off) Turn-Off De l a y Time -- 140 200 ns
tfFall Time -- 122 250 ns
Eon Turn- On Switching Loss -- 2785 -- uJ
Eoff Turn-Off Swi tchi ng Loss -- 3100 -- uJ
Ets Total Switching Loss -- 5885 -- uJ
QgTotal Gate Charge VCE = 300 V, IC = 80A,
VGE = 15V
-- 345 520 nC
Qge Gate-Emitter Charge -- 60 100 nC
Qgc Gate-Collector Charge -- 95 150 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 18 -- nH
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward V oltage IF = 25A TC = 25°C-- 1.4 1.7 V
TC = 100°C-- 1.3 --
trr Diode Reverse Recovery Time
IF = 25A,
di/ dt = 200 A/us
TC = 25°C-- 50 95 ns
TC = 100°C-- 105 --
Irr Diode Peak Reverse Recovery
Current TC = 25°C-- 4.5 10 A
TC = 100°C-- 8.5 --
Qrr Diode Reverse Recovery Charge TC = 25°C-- 112 375 nC
TC = 100°C-- 420 --
SGL160N60UFD Rev. B1
SGL160N60UFD
©2002 Fairchild Semiconductor Corporation
0 4 8 121620
0
4
8
12
16
20 Common Emitter
TC = 25℃
160A
80A
IC = 40A
Collecto r - Emitter Voltage, V
CE [V]
Gate - Emitter Vo ltag e , VGE [V]
0306090120150
0
1
2
3
4
160A
80A
IC = 40A
Comm on Emit ter
VGE = 15V
Coll ec tor - Emitter Voltage, V
CE [V]
Case Te mperature, TC [℃]
Fig 1. Typical Output Characteristics Fig 2. Typical Satu ration Voltage
Characteristics
Fig 3. Satur ation Voltage vs. Case
Temperature at Variant Current Level Fig 4. Load Curren t vs . Freq uency
Fig 7. Satur atio n Voltag e vs. VGE
02468
0
100
200
300
400
500 20V
12V
15V
VGE = 10V
Common Emitter
TC = 25℃
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
0.5 1 10
0
40
80
120
160
200
240 Common Emitter
VGE = 15V
TC = 25℃
TC = 125℃
Col l e c t o r Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
0
20
40
60
80
100
120
0.1 1 10 100 1000
Duty cycle : 50%
TC = 100℃
Power D issip ation = 130 W
VCC = 300V
Load Current : peak of square wave
Frequency [KH z]
Load Current [A]
0 4 8 12 16 20
0
4
8
12
16
20 Common Emitter
TC = 125℃
160A
80A
IC = 40A
Collector - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V]
Fig 6. Satur ation Voltage vs. VGE
SGL160N60UFD Rev. B1
SGL160N60UFD
©2002 Fairchild Semiconductor Corporation
20 40 60 80 100 120 140 160
20
100
1000
Toff
Tf
Toff
Tf
Com m on Em itter
VCC = 30 0V, VGE = ±15V
RG = 3.9Ω
TC = 25℃
TC = 125℃
Switching Time [ns]
Collector Cu rrent, IC [A]
20 40 60 80 100 120 140 160
10
100
500
Ton
Tr
Common Emitter
VCC = 300V, VGE = ±15V
RG = 3.9Ω
TC = 25℃
TC = 125℃
Switching Time [ns]
Collector Curren t, IC [A]
11080
30
100
1000
2000
Toff
Tf
Tf
Common Emitter
VCC = 300V, VGE = ±15V
IC = 80A
TC = 25℃
TC = 125℃
Switching Time [ns]
Gate Re sist ance , RG [Ω]
11080
20
100
1000 Common Emitter
VCC = 300V, VGE = ±15V
IC = 80A
TC = 25℃
TC = 125℃ Ton
Tr
Switching Time [ns]
Gate Resistance, RG [Ω]
Fig 7. Capacit ance Chara cteristics Fi g 8. Turn -On Character i st ic s vs.
Gate Resistance
Fig 9. Turn-Of f Characteris ti c s vs.
Gate Resistance Fig 10. Swit chin g Lo ss vs. Gate Resist ance
Fig 11. Tur n- O n Cha rac terist ics vs.
Collector Current Fig 12. Turn-Off Characteristics vs.
Collector Current
11030
0
1000
2000
3000
4000
5000
6000
7000
8000
Cres
Coes
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Capaci t ance [pF]
Collector - Emitter Voltage, VCE [V]
11080
1000
10000
Eoff
Eon
Eoff
Com m o n Em it te r
VCC = 300V, V GE = ±15V
IC = 80A
TC = 25℃
TC = 125℃
Switching Loss [uJ]
Gate Resistance, RG [Ω]
SGL160N60UFD Rev. B1
SGL160N60UFD
©2002 Fairchild Semiconductor Corporation
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristic Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
0 50 100 150 200 250 300 350
0
3
6
9
12
15
300 V
200 V
VCC = 10 0 V
Com m on Em itter
RL = 37.5 Ω
TC = 25℃
Gate - Emitter Voltage, V
GE [ V ]
Gate Charge, Qg [ nC ]
0.3 1 10 100 1000
0.1
1
10
100
1000
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearly with inc rease
in temperature
50us
100us
1㎳
DC O peration
IC MAX. (Conti nu ous)
IC MAX. (Puls e d)
Collector Current, I
C [A]
Collector-Emitter Voltage, VCE [V ]
1 10 100 1000
1
10
100
500
Safe Operating Area
VGE=20 V , TC=100oC
Collector Current, I
C [A]
Collector-Emitter Voltage, VCE [V]
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Therm al Respon se [Zth jc]
Rectangu lar Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
20 40 60 80 100 120 140 160
100
1000
10000
20000
Eon
Eoff
Common Emitter
VCC = 300V, VGE = ±15V
RG = 3.9Ω
TC = 2 5 ℃
TC = 125℃
Switching Loss [uJ]
Collector Current, IC [A]
Fig 17. Transien t Therma l Impedance of IGBT
SGL160N60UFD Rev. B1
SGL160N60UFD
©2002 Fairchild Semiconductor Corporation
100 1000
20
40
60
80
100
120 VR = 200 V
IF = 25A
TC = 25℃
TC = 100℃
Reverce Recovery Time, t
rr [ns]
di/dt [A/us]
Fig 19. Reverse Recovery Current
Fig 18. Forward Characteristics
Fig 20. Stored Charg e Fig 21. Reverse Recovery Time
1
10
100
0123
TC = 25℃
TC = 100 ℃
Forward Voltage Drop, V F [V]
Forward Current, I
F [A]
100 1000
1
10
100 VR = 200V
IF = 25A
TC = 25℃
TC = 100℃
Reverse Recovery Current, I
rr [A]
di/dt [A/us]
100 1000
0
200
400
600
800
1000 VR = 200V
IF = 25A
TC = 25℃
TC = 100℃
Stored Recovery Charge, Q
rr [nC]
di/dt [A/u s]
©2002 Fairchild Semiconductor Corporation SGL160N60UFD Rev. B1
SGL160N60UFD
Package Dimension
5.45TYP
[5.45
±0.30
]5.45TYP
[5.45
±0.30
]
4.90
±0.20
20.00
±0.20
(8.30) (8.30) (1.00)
(0.50)
(2.00)
(7.00)
(R1.00)
(R2.00)
ø3.30
±0.20
(7.00)
(1.50)
(1.50) (1.50)
2.50
±0.20
3.00
±0.20
2.80
±0.30
1.00
+0.25
–0.10
0.60
+0.25
–0.10
1.50
±0.20
6.00
±0.20
20.00
±0.20
20.00
±0.50
5.00
±0.20
3.50
±0.20
2.50
±0.10
(9.00)
(9.00)
(2.00)
(1.50)
(0.15)
(2.80) (4.00)
(11.00)
T O-264
Dimensions in Millimeters
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information
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No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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