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P41 98.2DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK1748, 1748-2 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1748 is N-channel MOS Field Effect Transistor PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver. in millimeters 2SK1748 6540.2 39 2340.2 FEATURES pdt 02 2 05+0.1 / @ Low On-state Resistance x { 4 = Roston) = 0.11 Q (Ves = 10 V, Ip = 4 A) a | S Rpsion) = 0.16 Q (Vas = 4 V, In = 4 A) = > 3/3lZ LowCiss iss = 850 pF TYP. i 42 Built-in G-S Gate Protection Diode 1.160.211 Z = | |S QUALITY GRADE | | Standard 0.6 + 0.1 06+ 0.1 Please refer to Quality grade on NEC Semi-conductor Devices $3123 a ~~ (Document number IEI-1209) published by NEC Corporation to {th ao i]t know the specification of quality grade on the devices and its 2SK1748-Z recommended applications. 85 02 2.3 0.2 50+0.2 2 + 05+01 ABSOLUTE MAXIMUM RATINGS (Ts = 25 C} 4, a . Drain to Source Voltage Voss 60 V > l S q ee Gate to Source Voltage Vass +20 V ? coo is S . Drain Current (DC) Ipipe} +8.0 A ot A Hoel 08 Lt Drain Current (pulse) ID(pulse)* +24 A 11402 og max Ad ig Total Power Dissipation (Te = 25 C) P11 20 WwW 23/23 0.8 Total Power Dissipation (Ta = 25 C) Prz 1.0 Ww Channel Temperature Teh 150 C ap al 1. Gate Storage Temperature Tstg -55 to +150 C Drain {D} 2. Drain * PW S$ 10 ps, Duty Cycle $ 1% i, Source Gate (G) code Gate protection diode Source {S) Document No. TC-2424 Date Published August 1993 M Printed in Japan NEC Corporation 1993NEC 2SK1748, 1748-Z ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain to Source On-state Resistance Rosion} 0.08 0.11 Q Ves=10V,lb=4A Drain to Source On-state Resistance Rosen) 0.11 0.16 Q Ves=4V,ID=4A Gate to Source Cutoff Voltage Vesiorn 1.0 2.5 V Vos = 10 V, lpb=1mMA Forward Transfer Admittance | yee | 5.0 $s Vos = 10 V, D=4A Drain Leakage Current Ipss 10 LA Vos = 60 V, Ves = 0 Gate to Source Leakage Current Icss +10 LA Ves = 20 V, Vos = 0 Input Capacitance Cies 850 pF Vos = 10 V Output Capacitance Coss 350 pF Ves = 0 Reverse Transfer Capacitance Cres 100 pF f= 1MHz Turn-On Delay Time tdton) 15 ns Vasion = 10 V Rise Time tr 60 ns Vop = 30 V Turn-Off Delay Time tdiott 100 ns lb= 4 A, Reo = 10 Q Fall Time tt 45 ns | 78 e Total Gate Charge Os 3 nc Ves = 10 V Gate to Source Charge Qes 7 nc lbD=8A Gate to Drain Charge Qep 25 nc Voo = 48.V Reverse Recovery Time tre 120 ns lr =8 A, Vas =0 Reverse Recovery Charge Ore 200 nc di/dt = 50 Avs Test Circuit 1: Switching Time DUTT. Re R PG.(1) Re= 102 I" Ves 0 t t= 1 us Duty Cycle S 1% Test Circuit 2: Gate Charge DUTT. Io=2mA Ru PG. 50.2 [*NEC 2SK1748, 1748-Z TYPICAL CHARACTERISTICS (Ta = 25 C) lo Drain Current-A dT Percentage of Rated Power - % lo - Drain Current - A 100 80 40 20 100 10 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA N Ny, N\ N 20 40 60 80 100 120 140 160 Tc - Case Temperature C FORWARD BIAS OPERATING AREA c= 25C Pulse 1 10 60 Vos - Drain to Source Voltage - V TRANSFER CHARACTERISTICS Vos = 10 V Pulsed 2 4 6 Ves - Gate to Source Voltage - V Pr - Total Power Dissipation W to Drain Current ~A 25 20 15 10 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE N \ N 20 40 60 80 100 120 140 160 Tc - Case Temperature C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed oS 1 2 3 4 5 Vos Drain to Source Voltage VNEC 235K1748, 1748-Z TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 10 1.0 0.1 0.01 Single Pulsed 10 100 yp 1m 10m 100 m 1 10 100 1000 PW - Pulse Width - s tn(t) - Transient Thermal Resistance CAV DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Vos = 10 V Pulsed Pulsed 150 100 | ye | Forward Transfer Admittance - $ 805 10 20 1 10 Roster) Drain to Source On-State Resistance mQ lp Drain Current - A Ves Gate to Source Voltage - V a DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs. E RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE g 7 20 Vos = 10 V 3 Pulsed Ds = S use g PS lb=1mA 2 | i an oa 8 150 g ~N 2 6 15 aS / @ re 5 3 400 Ves = 4V Ler 8 8 | Y 2 10 cs = 10 V D4 c oO S 1 a I 3 = 50 g 1 10 50 7 50 0 50 100 150 a lb - Drain Current - A Tch - Channel Temperature CNEC 2SK1748, 1748-2 SINGLE AVALANCHE CURRENT vs. G _ DRAIN TO SOURCE ON-STATE RESISTANCE vs. INDUCTIVE LOAD = CHANNEL TEMPERATURE 1 =30V 8 lo=4A < Rn = 252 5 Pulsed z =20-0V Bo ing Teh = 25 C a S : A 5 Nose 4 \ a a > 100 2 oe oO Ss 2 Le w -_ ' & w o 4 5 | 1m 10 m 100 m g 50 0 50. 100. ~150 a oc L Inductive load H Ten - Channel Temperature - CNEC 2SK1748, 1748-Z Reference Application note name No. Safe operating area of Power MOS FET. TEA-1034 Application circuit using Power MOS FET. TEA-1035 Quality contro! of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. 1El-1207NEC 23SK1748, 1748-2 [MEMO]NEC 2SK1748, 1748-Z [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6