Data Sheet No. 2N5416S Generic Part Number: 2N5416S Type 2N5416S Geometry TBD Polarity PNP Qual Level: Pending REF: MIL-PRF-19500/485 Features: * General-purpose low power amplifier transistor which operates over a wide temperature range. * Housed in TO-39 case. * Also it will be available in chip form using the TBD chip geometry. * TO-39 The Min and Max limits shown are per MIL-PRF-19500/485 which Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter voltage VCEO 300 V Collector-Base Voltage VCBO 350 V Emitter-Base voltage VEBO 6.0 V Collector Current, Continuous IC 1.0 A Power, TA = +25oC PT 0.75 Watt Power, TC = +25oC PT 10 Watt Thermal Resistance RJC 17.5 Operating Junction Temperature TJ -65 to +200 TSTG -65 to +200 Storage Temperature o C/W o C o C Data Sheet No. 2N5416S Electrical Characteristics o TC = 25 C unless otherwise specified OFF Characteristics Collector-Emitter Breakdown Voltage IC = 50 mA, IB = 5 mA, L = 25 mH, f = 30-60 Hz Collector-Base Cutoff Current VCB = 280 V VCB = 350 V o VCB = 280 V, TA = +150 C Emitter-Base Cutoff Current VEB = 6 V Collector-Emitter Cutoff Current VCE = 250 V VCE = 300 V Collector-Emitter Cutoff Current VCE = 300 V, VBE = 1.5 V ON Characteristics Forward Current Transfer Ratio IC = 50 mA, VCE = 10 V, pulsed IC = 1.0 mA, VCE = 1.0 V, pulsed Symbol Min Max Unit V(BR)CEO 200 --- V ICBO1 ICBO2 ----- 50 500 A A ICBO3 --- 1 mA IEBO --- 20 nA ICEO1 ICEO2 ----- 50 1 A mA ICEX --- 50 A Symbol Min Max Unit hFE1 hFE2 30 15 120 --- ----- 15 --- --- --- 2.0 V dc --- 1.5 V dc Symbol Min Max Unit |hFE| 3.0 15 --- hFE 55 --- --- COBO --- 15 pF CIBO --- 75 pF Symbol Min Max Unit ton --- 1.0 s toff --- 10 s IC = 10 mA, VCE = 10 V, TA = -55oC, pulsed hFE3 Collector-Emitter Saturation Voltage VCE(sat) IC = 50 mA, IB = 5 mA, pulsed Base-Emitter Saturation Voltage VBE VCE = 10 V, IC = 50 mA, pulsed Small Signal Characteristics Small Signal, Short Circuit Forward Current Transfer Ratio VCE = 10 V, IC = 10 mA, f = 5 MHz Short-Circuit, Forward Current Transfer Ratio VCE = 10 V, IC = 5 mA, f = < 1 kHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 5 V, IC = 0, 100 kHz < f < 1 MHz Pulse Response Turn on Time VCC = 200 V, IC = 50 mA, IB1 = 5 mA Turn off Time VCC = 200 V, IC = 50 mA, IB1 = IB2 = 5 mA Data Sheet No. 2N5416S Maximum Ratings