SEMTECH Today's Results. Tomorrows Vision TVS Diode Array For ESD and Latch-Up Protection SMS05C thru SMS24C September 17, 1998 DESCRIPTION The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD and other voltage-induced transient events. Each device will protect up to five lines. They are available with operating voltages of 5V, 12V, 15V and 24V. They are unidirectional devices and may be used on lines where the signal polarities are above ground. TVS diodes are solid-state devices designed specifically for transient surpression. They feature large cross-sectional area junctions for conducting high transient currents. They offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage and no device degradation. The SMS series devices may be used to meet the immunity requirements of IEC 1000-4-2, level 4. The low cost SOT-23 6L package makes them ideal for use in portable electronics such as cell phones, PDAs, and notebook computers. TEL:805-498-2111 FAX:805-498-3804 WEB:htto:/Awww.semtech.com FEATURES Transient protection for high speed data lines to IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 1000-4-4 (EFT) 40A (tp = 5/50ns) IEC 1000-4-5 (Lightning) 12A (tp = 8/20;1s) Small package for use in portable electronics Protects five I/O lines Working voltages: 5V, 12V, 15V and 24V Low leakage current Low operating and clamping voltages Solid state silicon avalanche technology MECHANICAL CHARACTERISTICS JEDEC SOT-23-6 package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481 APPLICATIONS @ RS-232, RS-423 data lines @ Microprocessor based equipment ORDERING INFORMATION @ Personal Digital Assistants (PDAs) Part Number | Working Qty per Reel Size : Sooo strumentation Voltage Reel Cell phones SMS05C.TB 5V 3,000 7 e Peripherals SMS05C.TE 5V 10,000 13 MARKING CODE SMS12C.TB 12V 3,000 7 , Part Number |) Marking Code SMS12C.TE 12V 10,000 13 SMSO5C C05 SMS15C.TB 15V 3,000 7 , SMS12C Cl2 SMS15C.TE 15V 10,000 13 SMS15C C15 SMS24C.TB 24V 3,000 7 , SMS24C C24 SMS24C.TE 24V 10,000 13 CIRCUIT DIAGRAM SCHEMATIC & PIN CONFIGURATION | 3 4 5 6 [i : 6) [2 | 5 [3 4 | 2 SOT-23-6L (Top View) 1998 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320SMS05C SEMTECH TVS Diode Array thru Today Rens tomar: Ve For ESD and Latch-Up Protection SMS24C September 17, 1998 MAXIMUM RATINGS Rating Symbol Value Unit Peak Pulse Power (tp = 8/20ps) Pu 350 Watts Peak Pulse Current (tp = 8/20us) Ipp 24 A Peak Forward Voltage (IF=1A, tp=8/20us) Vip 1.5 Vv Lead Soldering Temperature T, 260 (10 sec.) C Operating Temperature Tstg -55 to +125 C Storage Temperature Tj -55 to +150 C ELECTRICAL CHARACTERISTICS SMS05C Parameter Symbol Conditions Minimum | Typical | Maximum Units Reverse Stand-Off Voltage Vawm 5 Vv Reverse Breakdown Voltage Ver = 1mA 6 Vv Reverse Leakage Current ln Vawom = OV, T=25C 20 HA Clamping Voltage Vo Ipp = 5A, tp = 8/20pus 9.8 Clamping Voltage Vo Ipp = 24A, tp = 8/20us 14.5 Junction Capacitance C Between |/O pins and 325 400 pF Vaz ov te 1MHz SMS12C Parameter Symbol Conditions Minimum | Typical | Maximum Units Reverse Stand-Off Voltage Vawm 12 Vv Reverse Breakdown Voltage Ver = 1mA 13.3 Vv Reverse Leakage Current lp Vawm = 12V, T=25C 1 pA Clamping Voltage Vo Ipp = 5A, tp = 8/20pus 19 Clamping Voltage Vo Ipp = 15A, tp = 8/20us 23 Junction Capacitance C, Between |/O pins and 135 150 pF Gnd Va = OV, f = 1MHz 1998 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320SMS05C SEMTECH TVS Diode Array thru Today Rens tomar: Ve For ESD and Latch-Up Protection SMS24C September 17, 1998 ELECTRICAL CHARACTERISTICS SMS15C Parameter Symbol Conditions Minimum | Typical | Maximum Units Reverse Stand-Off Voltage Vawm 15 Vv Reverse Breakdown Voltage Ver = 1mA 16.7 Vv Reverse Leakage Current ln Vawm = 15V, T=25C 1 HA Clamping Voltage Vo Ipp = 5A, tp = 8/20pus 24 Clamping Voltage Vo Ipp = 12A, tp = 8/20us 29 Junction Capacitance C Between |/O pins and 100 125 pF Vaz ov te 1MHz SMS24C Parameter Symbol Conditions Minimum | Typical | Maximum Units Reverse Stand-Off Voltage Vawm 24 Vv Reverse Breakdown Voltage Ver = 1mA 26.7 Vv Reverse Leakage Current lp Vawm = 24V, T=25C 1 pA Clamping Voltage Vo Ipp = 5A, tp = 8/20pus 40 Clamping Voltage Vo Ipp = 8A, tp = 8/20yus 44 Junction Capacitance C, Between |/O pins and 60 75 pF Gnd Va = OV, f = 1MHz 1998 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320SMS05C TVS Diode Array thru SEMTECH For ESD and Latch-Up Protection SMS24C September 17, 1998 TYPICAL CHARACTERISTICS Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 10 110 100 = 90 = 3 a : 3 70 3 & 6 a a i 3 50 2 04 4 x & 30 ae a 20 10 0.01 0 0.1 1 10 100 1000 0 25 50 75 100 125 150 Pulse Duration - tp (us) Ambient Temperature - T, (C) Pulse Waveform Clamping Voltage vs. Peak Pulse Current 110 100 Waveform Waveform 90 Parameters: SMS24C Parameters: tr = 8ys > tr = 8us 80 td = 20pus 2 td = 20us = 70 o 3 60 z SMS15C z = SMS12C 8 50 > 2 P a 40 td = Ipp/2 30 E SMSO5C 20 e 10 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Time (us) Peak Pulse Current - Ipp (A) Forward Voltage vs. Forward Current 5 45 - 4 = st 3.5 o 3 D g = 25 > 3s 2 & 2 15 Waveform 2 1 Parameters: tr = 8us td = 20us 9 a Qo 0 5 10 15 20 25 30 35 40 45 Forward Current - Ir (A) 1998 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320SEMTECH Today's Results. Tomorrows Vision SMS05C TVS Diode Array thru For ESD and Latch-Up Protection SMS24C September 17, 1998 APPLICATIONS INFORMATION Device Connection for Protection of Four Data Lines The SMSxxC is designed to protect up to five unidirectional data lines. The device is connected as follows: 1. Unidirectional protection of five I/O lines is achieved by connecting pins 1, 3, 4, 5 and 6 to the data lines. Pin 2 is connected to ground. The ground connection should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. Circuit Board Layout Recommendations for Suppression of ESD. Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: e Place the SMSxxC near the input terminals or connectors to restrict transient coupling. Minimize the path length between the SMSxxC and the protected line. Minimize all conductive loops including power and ground loops. @ The ESD transient return path to ground should be kept as short as possible. e Never run critical signals near board edges. e Use ground planes whenever possible. SMSxxC Circuit Diagram Protection of Five Unidirectional Lines 1/01 O 1/020 1/03 | [4 pe fe > 3 Le ty 1/040 |, |/05 O O 1998 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320SMS05C thru ' TVS Diode Array : SEMTECH For ESD and Latch-Up Protection SMS24C September 17, 1998 OUTLINE DRAWING SOT23-6L ft it -EF -G 0 | 1 my my 7 mJ 1) C 7 Neto ne [2] PACKAGE OUTLINE EXCLUSIVE OF MOLD FLASH AND METAL BURR. f{) CONTROLLING DIMENSIONS: MILLIMETERS. LAND PATTERN SOT23-6L - REP IMS) INCHES MM +++ +4+ +4 1998 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320