MAXIMUM RATINGS 2Ne516 | 2N6517 NPN Rating Symbol | 2N6515 | 2N6519 | 2N6520 | Unit aN 6 5 1 5 Collector-Emitter Voltage VcEO 250 300 350 Vde Collector-Base Voltage Ccso 250 300 350 Vde thru 2 N65 1 7x Emitter-Base Voltage VEBO Vde 2N6515, 2N6516, 2N6517 6.0 PNP 2N6519, 2N6520 5.0 (2) Base Current 250 mAdec 2N65 1 9 Collector Current Continuous 500 mAde 2 N6520*(2 } Total Device Dissipation 625 mw @TsA = 25C 50 mWPC CASE 29-04, STYLE 1 Derate above 25C TO-92 (TO-226AA) Total Device Dissipation 1.5 Watts 3 Collect @Tc = 25C 12 mWwrc ector 3 Collector Derate above 25C Operating and Storage Junction TJ. Tstg -55 to +150 C Bese Be Temperature Range ase THERMAL CHARACTERISTICS Ne PNP Emitter Characteristic Symbol! Max Unit Thermal Resistance, Junction to Ambient Rasa 200 CAWV HIGH VOLTAGE Thermal Resistance, Junction to Case Rese 83.3 CAV TRANSISTORS This is a Motorola ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) designated preferred device. ; Characteristic | Symbol | Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) V(BR)CEO Vde (ic = 1.0 mAdc, Ip = 0) 2N6515 250 _ 2N6516, 2N6519 300 _ 2N6517, 2NG520 350 _ Collector-Base Breakdown Voltage V(BRICBO Vde (Ic = 100 pAde, IE = 0) 2N6515 250 _ 2N6516, 2N6519 300 _ 2N6517, 2N6520 350 _ Emitter-Base Breakdown Voltage VIBR)EBO Vde (ig = 10 pAde, ic = 0) 2N6515, 2N6516, 2N6517 6.0 _ 2N6519, 2N6520 5.0 _ Collector Cutoff Current IcBO nAdc (Vep = 150 Vde, Ie = 0} 2N6515 _ 50 (Veg = 200 Vdc, Ie = 0} 2N6516, 2N6519 ~ 50. (Vep = 250 Vde, le = 0) 2N6517, 2N6520 _ 50 Emitter Cutoff Current lEBO nAdc (Vep = 5.0 Vde, Ic = 0) 2N6515, 2N6516, 2N6517 _ 50 (Vep = 4.0 Vde, Ir = 0) 2N6519, 2N6520 50 ON CHARACTERISTICS(1) DC Current Gain hee . mene (I = 1.0 mAde, Veg = 10 Vdc) 2N6515 35 ~~ . 2N6516, 2N6519 30 _ 2N6517, 2N6520 20 _ (l = 10 mAdc, Vee = 10 Vde} 2N6515 50 _ 2N6516, 2N6519 45 _ 2N6517, 2N6520 30 _ (I = 30 mAde, Vee = 10 Vdc) 2N6515 50 300 2N6516, 2N6519 45 270 2N6517, 2N6520 30 200 (I = 50 mAde, Vee = 10 Vde} 2N6515 45 220 2N6516, 2N6519 40 200 2N6517, 2N6520 20 200 (Ic = 100 mAdc, Vcp = 10 Vdc) 2N6515 25 ~ 2N6516, 2N6519 20 _ 2N6517, 2NG520 15 _- Motorola SmallSignal Transistors, FETs and Diodes Device Data 2-55NPN 2N6515 thru 2N6517 PNP 2N6519 2N6520 ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) Symbol Min Max Unit __ Characteristic Collector-Emitter Saturation Voltage | VcE(sat) Vde (Ic = 10 mAde, lg = 1.0 mAdc} ~ 0.30 (I = 20 mAdc, Ig = 2.0 mAdc} _ 0.35 (i = 30 mAdc, Ip = 3.0 mAdc} -_ 0.50 (i = 50 mAdc, Ig = 5,0 mAdc) _ 1.0 Base-Emitter Saturation Voltage VBE(sat) Vde {I = 10 mAds, Ip = 1.0 mAde) _ 0.75 {Ic = 20 mAds, Ip = 2.0 mAdc) - 0.85 {Ic = 30 mAdg, Ip = 3.0 mAdc) ~ 0.90 | Base-Emitter On Voltage VBE(on) _ 2.0 Vde ig = 100 mAde, Veg = 10 Vdc} _. SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product(1) fT 40 200 MHz (l = 10 mAde, Voge = 20 Vde, f = 20 MHz) Collector-Base Capacitance Cob ad 6.0 pF (VcB = 20 Vde, Ip = 0, f = 1.0 MHz) Emitter-Base Capacitance Ceb pF (VEB = 0.5 Vde, Ic = 0, f = 1.0 MHz} 2N6515 thru 2N6517 _ 80 2N6519, 2N6520 _ 400 SWITCHING CHARACTERISTICS _ _ Turn-On Time ton ~ 200 pS Woo = 100 Vde, VeE(off) = 2.0 Vde, I = 50 mAde, IB1 = 10 mAde) Turn-Off Time . toff - - 3.5 pS Wee = 100 Vde, Ig = 50 mAdc, Ip1 = Ip = 10 mAdc) (1) Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. (2) Voltage and current are negative for PNP transistors. NPN | PNP FIGURE 1 DC CURRENT GAIN 2N6515, 2N6516 2N6519 200 Voe=10V Ty2 125C Veg = -10V =z z 100 = 10 <= be = 70 = 10 ou x= o 5 S50 o a a a if = 30 x 20 20 1.0 20 3.0 0 70 10 260 30 50 70 100 10 20-30 -60-70 -10 -2% -3% -& 70 - 100 Ic, COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT {ma} 2-56 Motorola Smalt-Signal Transistors, FETs and Diodes Device Data of | la200 S a ~ Qo we a a o hee, DC CURRENT GAIN nN o oo a 3S on So as 2 wy Qo fy, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) = oa S co 2 a S = V, VOLTAGE (VOLTS) 2S ho 0 1D 2N6517 Ty = 1259C 20 3.0 50 7.0 10 20 I, COLLECTOR CURRENT (mA) 30 NPN 2N6515 thru 2N6517 PNP 2N6519 2N6520 FIGURE 2 DC CURRENT GAIN 2N6520 Je sy o a a on o w S a oa hee, DC CURRENT GAIN 10 50 70 1.0 20 -30 - -3 ig, COLLECTOR CURRENT (mA) io 80 ~7.0 -10 FIGURE 3 CURRENT-GAIN BANDWIDTH PRODUCT 2N65 15, 2N6516, 2N6517 Ty # 26C =20V t= 20 MHz 20 5.0 70 10 20 Ic, COLLECTOR CURRENT (may NPN 2N6515, 2N6516, 2N6517 Ty = 25C E(on) Veg = 10V VCE (sat) @ Ieflg = 10 20 43.0 Ic, COLLECTOR CURRENT (mA} $0 7.0 10 20 30 30 2N6519, 2N6520 o So ~ 3 an 3 Ty = 25C Vce = 20V f = 20 MHz we ao nN So fy, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) a 50 70 a & -20 -30 5.0 -7,.0 -10 -2 -30 Ic, COLLEGTOR CURRENT (mA} 100 PNP FIGURE 4 ON VOLTAGES 2N6519, 2N6520 VBE(sat) @ I/lg = 10 VBE{on} @ Vee = 10 V, VOLTAGE (VOLTS) { VCE(sat) @ Ip/lp = 10 @ =5.0 _ 50 70 100, 10 -20 -30 ~50 -70 -10 -0 -% Ic, COLLECTOR CURRENT (mA) 70 -100_ ~60 -70 ~ 100 CE (sat) @ fg/lp * 8 -70 -100 Motorola Smal!l-Signal Transistors, FETs and Diodes Device Data 2-57NPN 2N6515 thru 2N6517 PNP 2N6G519 2N6520 FIGURE 5 ~ TEMPERATURE COEFFICIENTS 2N6515, 2N6516, 2N6517 2N6519, 2N6520 26 S BO om =10 =10 in = oN nn & 25C to 128C 25C to 1 a 2 Reye for Vee 05 Reve for Vee (sat) -55C te 2595 A s on to 259C ' o ' 2 10 125C ~-859C to 1259C 0 1 ~ wm in for Vee Roy, TEMPERATURE COEFFICIENTS imP*C} on Reve for Rey, TEMPERATURE COEFFICIENTS (mVC) Qo -2.0 -2.0 ~ -2,5 = 26 1.0 20 63.0 50 70 19 ~ 2 3 50 670 (100 10 -20 -30 -80-7.0-10 = 30 50 70 -100 Ip, COLLECTOR CURRENT (mA} . Ic, COLLECTOR CURRENT (mA} . FIGURE 6 CAPACITANCE - 2N6515, 2N6516, 2N6517 2N6519, 2N6520 100 100 - 70 Ty = 259C 70 a ft TTy= 25C 50 50 : ah 30 30 zo z 20 iw a =z a ~ i z 10 o 70 oa 70 #50 = 5.0 3 & 5: 30 oc 3.0 2.0;- 2.0 10 + - 1.0 - = 0.2 0.5 1.0 2.0 5.0 i0 20 50 100 200 02 -05 -10 -20 -0 -10 -2 -50 ~100 200 Vr, REVERSE VOLTAGE {VOLTS} - Vr, REVERSE VOLTAGE (VOLTS) _ NPN | PNP FIGURE 7 TURN-ON TIME 2N6515, 2N6516, 2N6517 2N6519, 2N6520 1.0k 10k 700 ~toLy 100 V 70 ~ CE(aff) = 500 ta VBEloth v > Ie/lg = 5.0 600 300 . Ty = 2606 300 - 200 200 - @ 100 = 100 = 70 w 70 F- 50 = 40 30 30 20 20 10 10 . ~1.0 2.0 -30 -58-7.0 -10 ~2 -30 -80 -70 -100 Ic, COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) a 2-58 Motorola Smail-Signal Transistors, FETs and Diodes Device DaiaNPN 2N6515 thru 2N6517 PNP 2N6519 2N6520 FIGURE 8 TURN-OFF TIME 1, TIME {ns} 2N6515, 2NG516, 2N6517 2N6519, 2N6520 ik 2.0 ae 7.0 k 5.0 k 10k ak 700 500 = 2.0k = Veetoff) = 100 V 300 _ Io/lg =5.0 3 = 10k > Ip1=lp2 = 200 = 300 Ty = 285C = 500 > wo 70 300 50 200 30 100 20 10-20 -30 -50-7.0 -10 ~2 -30 50 70 100 Ip, COLLECTOR CURRENT (mA) - Ic, COLLECTOR CURRENT (mA) FIGURE 9 SWITCHING TIME TEST CIRCUIT +*Vcc 22k Voc Adjusted - 20k +10.8V for VcE(off) 7 100 V 50 Q Sampling Scope 1.0k | ! gs | { 7 9.2V 1/2MsD7000 Pulse Width * 100 us ty, te = 5.0 ns ~ Duty Cycle < 1.0% Approximately For PNP Test Circuit, Reverse All Voltage Polarities -1.35 V (Adjust for VBE (off) = 2.0 V) r{t} TRANSIENT THERMAL RESISTANCE (NORMALIZED) FIGURE 10 - THERMAL RESPONSE 1.0 07 Os 03 0.2 0.1 0.07 SINGLE PULSE 0.05 0.03 Zoic =e Rese || Tdipk) - Te = Pipk) ZoJcit) 0.02 - . mam Zasatt)= ithe Roda Taipk) - TA Pipk) ZaJA(t) a 2 Os ih 10 5.0 0 0 50 100 200 500 10k 20k 50k 10k 1, TIME (ms} Motorola Small-Signal Transistors, FETs and Diodes Device Data 2-59NPN 2N6515 thru 2N6517 PNP 2N6519 2N6520 FIGURE 11 ACTIVE REGION SAFE OPERATING AREA DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA 500 y 100 gs SQ us Figure A 200 = 250 < 2S 1,0 ms t 100 igs moh < tp 5 = ~ a 50 Pp Pp oc - x -. % - - @ 20 ~ Met . aod _- L . & 10-- THERMAL LIMIT / = a - -- a (PULSE CURVES @ Te = 759C) = 3 = 5.0 | nw SECOND BREAKDOWN LIMIT oO oa - ~ | | t 320 - Curvesapply . ay ou ope. af 7 ene 2NB516, 2NESIS. . | | | 1.0 : = , : = = 2N6517, 2N6520 < 1 +| Bs 20 50. 10 20 50 100 _ Duty Cycle = , #=21 = Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) tp Peak Pulse Power = Pp 2-60 Motorola SmallSignal Transistors, FETs and Diodes Device Data