| Ordering number:EN 1793B | 2SK583 N-Channel Enhancement MOS Silicon FET Analog Switch Applications Applications - Analog switches, low-pass filters Features . Large |yfs| . Enhancement type small ON-resistance Absolute Maximum Ratings at Ta=25C unit Drain to Source Voltage Ybs 50 6 Gate to Source Voltage Vas 120 OV Drain Current . Ih 200 mA Drain Current (Pulse) Ipp 300 mA Allowable Power Dissipation Pp 600 aW Channel Temperature Ton 125 % Storage Temperature T3tg -55 to +125 % Electrical Characteristics at Ta=25C min typ max unit Drain to Source Voltage Vipr)ps Tp= 10: A, Vagz0V- 50 v Gate Cutoff Current , Toss Vgg= 10V, Vp g=0V 0.01 10 nA Cutoff Voltage Vescorr) Ypgt0VsIp=1002A 0.3 0.91.5 V Drain Current Ings Vp g=20V, Vgg20V 1 4A Forward Transfer Admittance \yPs| Vpg210V,1Ip=50mA,f=ikHz 25 40 mS Intput Capacitance Cass Vpg=10V,Vegr0, f= 1MHz 15 pF Output Capacitance Coss Vpg= 10V, Vag=0, f= 1MHz 6 pF Reverse Transfer Capacitance Crs Vpg= 10V, Vgg=0, f= 1MHz 0.5 pF ON-Resistance TDs(on) Vgg= 10V,Ip=10mA 20 0 Package Dimensions 2005A ( unit: mm ) 2.0 046 | 8 Li) nee 1F 23 0.45 14.0 5.0 JEDEC: TO-92 G: Gate EIAJ : SC-43 S: Source SANYO; NP PD: Drain SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 6140M0/5137TA/3205MH ,TS No. 1793-1/2 25K583 Ip - V6s 160 ' <7} Vps=10v pee: t { a i < i] & 123 y a I : 2 100 f a fo / P S 20 i E / 3 5 60 5 y 2 5 7, 20 7 0 z(C D I 2 a 4 5 7 a Drain to Source Voltage, Vp, - V Gate to Source Voltage Vos - V gm - Ip 6 9m - Ves Vos=10 4100 x ie oy) are e = ' 1 30 2 . ke 10 Ye 10 6 Lo 10 100 10m) Os 10 Le 18 22 25 30 Drain Current ,Ip - mA Gate to Source Voltage, Yas -V Ros{on) - Ves 10 Ciss,Coss,Crss ~ VDS 0 [p=tOma fu gins G age tigi I 1 Qt _ noe a nog f& o a? ao a > ~ a NX o 5? a 256 $ _ 29 a 2 dos a o a a go be 3 gen 2 eee * Aso? 2 o ca 9 Crss o Ho 0 2 4 6 & 10 i} 16 2 & 1% Gate to Source Voltage, Vos - V Drain to Source Voltage,Vp, ~ V Mi No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, M Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC GO., LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No. 1793-2/2