MJE13002B - Unisonic Technologies Co., Ltd.

UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD 1

QW-R204-014,B

NPN SILICON POWER TRANSISTOR

The UTC MJE13002 designed for use in high–volatge,high

speed,power switching in inductive circuit, It is particularly suited

for 115 and 220V switchmode applications such as switching

regulator’s,inverters,DC-DC converter,Motor control,

Solenoid/Relay drivers and deflection circuits.

FEATURES

*Collector-Emitter Sustaining Voltage:

VCEO (sus)=300V.

*Collector-Emitter Saturation Voltage:

VCE(sat)=1.0V(Max.) @Ic=1.0A, IB =0.25A

*Switch Time- tf =0.7μs(Max.) @Ic=1.0A.

TO-126

1: BASE 2:COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATING UNIT

Collector-Emitter Voltage VCEO (sus) 300 V

Collector-Emitter Voltage VCEV 600 V

Emitter Base Voltage VEBO 9 V

Collector Current- Continuous

- Peak (1)

ICM

1.5

Base Current – Continuous

- Peak (1)

IBM

0.75

1.5

Emitter Current – Continuous

- Peak (1)

IEM

2.25

4.5 A

Total Power Dissipation @ TA=25℃

Derate above 25℃

PD 1.4

11.2

Watts

MW/℃

Total Power Dissipation @ TC=25℃

Derate above 25℃

PD 40

320

Watts

MW/℃

Operating and Storage Junction

Temperature Range

Tj , Tstg -65 to +150 ℃

THERMAL CHARACTERISTICS

CHARACTERISTIC SYMBOL MAX UNIT

Thermal Resistance, Junction to Case RθJC 3.12 ℃/W

Thermal Resistance, Junction to Ambient RθJA 89 ℃/W

Maximum Load Temperature for Soldering Purposes:

1/8” from Case for 5 Seconds

TL 275

℃

(1) Pulse Test : Pulse Width=5ms,Duty Cycle≤10%

UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD 2

QW-R204-014,B

Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most circuits

entirely from the information presented. SOA Limit curves – representing boundaries on device characteristics – are

given to facilitate “Worst case” design.

ELECTRICAL CHARACTERISTICS (Tc=25℃ unless otherwise noted)

CHARACTERISTIC SYMBOL MIN TYP MAX UNIT

OFF CHARACTERISTICS (1)

Collector-Emitter Sustaining Voltage

(Ic=10 mA , IB=0) VCEO(SUS) 300

Collector Cutoff Current

(VCEV=Rated Value, VBE (off)=1.5 V)

(VCEV=Rated Value, VBE(off)=1.5V,Tc=100℃)

ICEV

Emitter Cutoff Current

(VEB=9 V, Ic=0)

IEBO 1 mA

SECOND BREAKDOWN

Second Breakdown Collector Current with bass forward biased Is/b See Figure 10

Clamped Inductive SOA with base reverse biased RBSOA See Figure 11

ON CHARACTERISTICS (1)

DC Current Gain

(Ic=0.5 A, VCE=2 V)

(Ic=1 A, VCE=2 V)

hFE1

hFE2

Collector-Emitter Saturation Voltage

(Ic=0.5A,IB=0.1A)

(Ic=1A,IB=0.25A)

(Ic=1.5A,IB=0.5A)

(Ic=1A,IB=0.25A,Tc=100℃)

VCE(sat)

0.5

Base-Emitter Saturation Voltage

(Ic=0.5A,IB=0.1A)

(Ic=1A,IB=0.25 A)

(Ic=1A,IB=0.25A,Tc=100℃)

VBE(sat)

1.2

1.1

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

(Ic=100mA,VCE=10 V, f=1MHz) fT 4 10

MHz

Output Capacitance

(VCB=10V,IE=0,f=0.1MHz)

Cob 21 pF

SWITCHING CHARACTERISTICS(TABLE 1)

Delay Time td 0.05 0.1

μs

Rise Time tr 0.5 1

μs

Storage Time ts 2 4

μs

Fall Time

(Vcc=125V,Ic=1A,

IB1=IB2=0.2A,tp=25μs,

Duty Cycle≤1%) tf 0.4 0.7

μs

INDUCTIVE LOAD, CLAMPED (TABLE 1,FIGURE 12)

Storage Time tsv 1.7 4

μs

Crossover Time tc 0.29 0.75

μs

Fall Time

(Ic=1A,Vclamp=300V,

IB1=0.2A,VBE(off)=5V,Tc=100℃) tfi 0.15 μs

(1) Pulse Test : PW=300μs, Duty Cycle≤2%

CLASSIFICATION OF HFE1

RANK A B C D E F

RANGE 8 ~ 16 15 ~ 21 20 ~ 26 25 ~ 31 30 ~ 36 35 ~ 40

UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD 3

QW-R204-014,B

TYPICAL PERFORMANCE CHARACTERISTICS

,COLLECTOR -EMITTER VOLTAGE (VOLTS)

0.02

Figure 2. Collector Saturation Region

0.05 0.01 2

1.6

1.2

0.8

0.4

0.02 0.05 0.1 0.2 0.5 1

IB, BASE CURRENT (AMP)

Ic=0.1A 0.3A 0.5A 1A 1.5A

Tj=25℃

V,VOLTAGE (VOLTS)

0.02

Figure 3. Base-Emitter Voltage

0.03 0.05 2

1.4

1.2

0.8

0.6

0.4

0.07 0.20.1 0.3 0.5 0.7

IC, COLLECTOR CURRENT (AMP)

Tj=-55℃

25℃

150℃

VBE(sat)@IC/IB=3

- - - - - - VBE(on)@VCE=2V

V,VOLTAGE (VOLTS)

Figure 4. Collector-Emitter Saturation Region

0.35

0.3

0.25

0.2

0.15

IC, COLLECTOR CURRENT (AMP)

IC/IB=3

0.1

0.05

0.02 0.03 0.05 2

0.07 0.20.1 0.3 0.5 0.7 1

IC,COLLECTOR CURRENT (

米A)

Figure 5. Collector Cutoff Region

VBE,BASE-EMITTER VOLTAGE (VOLTS)

-0.4 -0.2 +0.

+0.20+0.4

104

103

102

101

100

-1 REVERSE FORWARD

VCE=250V

V,VOLTAGE (VOLTS)

Figure 6. Capacitance

500

300

200

100

VR,REVERSE VOLTAGE (VOLTS)

0.1 0.2 0.5 200

1521020

50 100

500 1000

Cib

Cob

Tj=150℃

125℃

100℃

75℃

50℃

25℃

Tj=-55℃

25℃

150℃

hFE,DC CURRENT GAIN

Figure 1. DC Current Gain

Tj=150℃

25℃

-55℃

VCE=2V

- - - - - -VCE=5V

0.02 0.03 0.05 0.07 2

0.1 0.2 0.3 0.5 0.7 1

IC, COLLECTOR CURRENT (AMP)

UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR

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QW-R204-014,B

TABLE 1.TEST CONDITIONS FOR DYNAMIC PERFORMANCE

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE

SWITHCING

TEST CIRCUITS

pw 5V

DUTY CYCLE≦10%

tr,tf≦10ns 68

0.001μF

1N4933

0.02μF270

+5V

1N4933 33

+5V

MJE210

2N2222

2N2905

1/2W 100

MJE200

-VBE(off)

T.U.T.

Vcc

MR826*

Vcl amp

*SELECTED FOR≧1kV

5.1k

VCE

NOTE

PW and Vcc Adjusted for Desired Ic

RB Adjusted for Desi red IB1

1N4933

+125V

-4.0V

SCOPE

TUT

CIRCUIT

VALUES

Coil Data : GAP for 30 mH/2 A Vcc=20V

FERROXCUBE core #6656 Lcoil=50mH Vclamp=300V

Full Bobbin (-200 Turns) #20

Vcc=125V

Rc=125Ω

D1=1N5820 or

Equiv.

RB=47Ω

TEST WAVEFORMS

Ic(pk)

tf CLAMPED

tft1

VCE

TIME t2 t

VCE or

Vclamp

OUTPUT WAVEFORMS

t1 Adjusted to

Obtain Ic

Test Equipment

Scope-Tektronics

475 or Equivalent

t1= Lcoil(Icpk)

Vcc

t2= Lcoil(Icpk)

Vclamp

+10.3V 25μS

-8.5V

tr,tf<10ns

Duty Cycly=1.0%

RB and Rc adjusted

for desired IB and Ic

TABLE 2.TYPICAL INDUCTIVE SWITCHING PERFORMANCE

Ic Tc Tsv Trv Tfi Tti Tc

AMP ℃ μs μs μs μs μs

0.5 25

100

1.3

1.6

0.23

0.26

0.30

0.35

0.40

0.30

0.36

1 25

100

1.5

1.7

0.10

0.13

0.14

0.26

0.05

0.06

0.16

0.29

1.5 25

100

1.8

0.07

0.08

0.10

0.22

0.05

0.08

0.16

0.28

Note: All Data Recorded in the inductive Switching Circuit Table 1

UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR

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QW-R204-014,B

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage

waveforms since they are in phase, However, for inductive loads which are common to SWITCHMODE power

supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements

must be made on each wave form to determine the total switching time, For this reason, the following new terms

have been defined.

tsv=Voltage Storage Time, 90% IB1 to 10% Vclamp

trv=Voltage Rise Time, 10-90% Vclamp

tfi=Current Fall Time, 90-10% Ic

tti=Current Tail, 10-2% Ic

tc=Crossover Time, 10% Vclamp to 10% IC

An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these

terms.

For the designer, there is minimal switching loss during storage time and the predominant switching power losses

occur during the crossover interval and can be obtained using the standard equation from AN-222:

PSWT=1/2 VccIc (tc)f

In general, trv + tfi≒tc. However, at lower test currents this relationship may not be valid.

As is common with most switching transistor, resistive switching is specified at 25℃ and has become a benchmark

for designers. However, for designers of high frequency converter circuits, the user oriented specifications which

make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100

℃

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second

break-down. Safe operating area curves indicate Ic – VCE limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 10 is based on Tc=25℃; TJ(pk) is variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be derated when Tc≧25℃. Second breakdown limitations do

not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at

any case tem-perature by using the appropriate curve on Figure 12.

TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most

cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to

a safe level at or below a specific value of collector current. This can be accomplished by several means such as

active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias

Safe Operating Area and represents the voltage–current conditions during re-verse biased turn–off. This rating is

verified under clamped conditions so that the device is never subjected to an ava-lanche mode. Figure 11 gives

RBSOA characteristics.

UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO. LTD 6

QW-R204-014,B

Figure 7. Inductive Switching Measurements

TIME

ICPK Vclamp

90% Vclamp 90% Ic

Ic tsv trv tfi tti

10% Vclamp 10%

ICPK 2% IC

90% IB1

VCE

t,TIME(米S)

0.02

Figure 8. Turn-On Time

0.03 0.05 20

0.7

0.2

0.1

0.02

0.07 0.20.1 0.3 0.5 0.7

IC, COLLECTOR CURRENT (AMP)

0.5

0.3

0.07

0.05

0.03

Vcc=125V

Ic/IB=5

TJ=25℃

td @ VBE(off)=5V

t,TIME(米S)

0.02

Figure 9. Turn-Off Time

0.03 0.05 2

0.7

0.1

0.07 0.20.1 0.3 0.5 0.7

IC, COLLECTOR CURRENT (AMP)

0.5

0.3

0.2

ts Vcc=125V

Ic/IB=5

TJ=25℃

Ic,COLLECTOR CURRENT (AMP)

Figure 10. Active Region Safe Operating Area

10 500

0.5

0.2

0.0

120 50 100 200

VCE,COLLECTOR-EMITTERVOLTAGE (VOLTS)

300

0.1

0.05

0.02

THERMAL LIMIT (SINGLE PULSE)

BONDING WIRE LIMIT

SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW RATED VCEO

10μS

100μS

1.0ms

5.0ms

Tc=25℃

V,VOLTAGE (VOLTS)

Figure 11. Reverse Bias Safe Operating Area

1.6

1.2

0.8

VCEV,COLLECTOR-EMITTER LAMP VOLTAGE(VOLTS)

0.4

0100 800

200 40

0500 600 700

VBE(off)=9V

Tj≦100℃

IB1=1A

1.5V

POWER DERATING FACTOR

Figure 12. Forward Bias Power Derating

40 60 160

0.8

0.6

0.4

0.2

80 100 120

IC, CASE TEMPERATURE (℃)

140

SECOND BREAKDOWN

DERATING

THERMAL

DERATING

UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR

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QW-R204-014,B

r(t),EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.01

Figure 13. Thermal Response

0.02 0.03 2

0.7

0.5

0.1

0.07

0.01

30.10.05 0.2 0.3 0.5

IC, COLLECTOR CURRENT (AMP)

0.3

0.2

0.05

0.03

0.02

5 10 20 50 100 200 500 1000

P (PK)

DUTY CYCLE,D=t1/t2

ZθJC(t)=r(t) RθJC

RθJC=3.12℃/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk)-TC=P(pk) RθJC(t)

D=0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

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presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.