BUX48A - ON Semiconductor - Datasheet.Directory

SWITCHMODE II Series

NPN Silicon Power Transistors

The BUX 48/BUX 48A transistors are designed for high–voltage,

high–speed, power switching in inductive circuits where fall time is

critical. They are particularly suited for line–operated

SWITCHMODE applications such as:

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

•Fast Turn–Off Times

60 ns Inductive Fall Time — 25C (Typ)

120 ns Inductive Crossover Time — 25C (Typ)

•Operating Temperature Range –65 to +200C

•100C Performance Specified for:

Reverse–Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltage

Leakage Currents (125C)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎÎ

BUX48

ÎÎÎÎÎ

BUX48A

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎ

400

ÎÎÎÎÎ

450

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage (VBE = – 1.5 V)

ÎÎÎÎ

VCEX

ÎÎÎÎÎ

850

ÎÎÎÎÎ

1000

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

7

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

— Overload

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

IC

ICM

IOI

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

15

30

60

ÎÎÎ

Î

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak (1)

ÎÎÎÎ

IB

IBM

ÎÎÎÎÎÎÎÎÎ

5

20

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation — TC = 25C

— TC = 100C

Derate above 25C

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

175

100

1

ÎÎÎ

Î

ÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎÎ

1

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

TL

ÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎ

275

ÎÎÎ

Î

ÎÎÎ

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  10%.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 9 1Publication Order Number:

BUX48/D

BUX48

BUX48A

15 AMPERES

NPN SILICON

POWER TRANSISTORS

400 AND 450 VOLTS

V(BR)CEO

850–1000 VOLTS

V(BR)CEX

175 WATTS

CASE 1–07

TO–204AA

(TO–3)

BUX48 BUX48A

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 200 mA, IB = 0) L = 25 mH BUX48

BUX48A

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

400

450

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEX = Rated Value, VBE(off) = 1.5 Vdc)

(VCEX = Rated Value, VBE(off) = 1.5 Vdc, TC = 125C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEX

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.2

2

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEX, RBE = 10 Ω)T

C = 25C

TC = 125C

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICER

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.5

3

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.1

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Breakdown Voltage

(IE = 50 mA – IC = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

V(BR)EBO

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

7

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with Base Forward Biased

ÎÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎ

See Figure 12

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎÎ

RBSOA

ÎÎÎÎÎÎÎÎÎ

See Figure 13

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 10 Adc, VCE = 5 Vdc) BUX48

(IC = 8 Adc, VCE = 5 Vdc) BUX48A

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

8

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc)

(IC = 15 Adc, IB = 3 Adc) BUX48

(IC = 10 Adc, IB = 2 Adc, TC = 100C)

(IC = 8 Adc, IB = 1.6 Adc)

(IC = 12 Adc, IB = 2.4 Adc) BUX48A

(IC = 8 Adc, IB = 1.6 Adc, TC = 100C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.5

5

2

1.5

5

2

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc) BUX48

(IC = 10 Adc, IB = 2 Adc, TC = 100C)

(IC = 8 Adc, IB = 1.6 Adc)

(IC = 8 Adc, IB = 1.6 Adc, TC = 100C) BUX48A

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.6

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

ÎÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎ

350

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS Resistive Load (Table 1)

ÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

I10 A I 2 A BUX48

ÎÎÎÎÎ

td

ÎÎÎÎ

—

ÎÎÎ

0.1

ÎÎÎÎ

0.2

ÎÎÎ

µs

ÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

IC = 10 A, IB = 2 A BUX48

IC = 8 A, IB = 1.6 A BUX48A

ÎÎÎÎÎ

tr

ÎÎÎÎ

—

ÎÎÎ

0.4

ÎÎÎÎ

0.7

ÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

IC

=

8

A

,

IB

=

1

.

6

A BUX48A

Duty Cycle = 2%, VBE(off) = 5 V

T=30µsV

CC = 300 V

ÎÎÎÎÎ

ts

ÎÎÎÎ

—

ÎÎÎ

1.3

ÎÎÎÎ

2

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Tp = 30 µs, VCC = 300 V

ÎÎÎÎÎ

tf

ÎÎÎÎ

—

ÎÎÎ

0.2

ÎÎÎÎ

0.4

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load, Clamped (Table 1)

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎ

IC = 10 A

ÎÎÎÎÎ

(T 25



C)

ÎÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎ

1.3

ÎÎÎÎ

—

ÎÎÎ

µs

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎ

IC

10

A

IB1 = 2 A BUX48

ÎÎÎÎÎ

(TC = 25C)

ÎÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎ

0.06

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎ

IC

=

8A

ÎÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎ

1.5

ÎÎÎÎ

2.5

ÎÎÎ

ÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎ

I

C =

8

A

IB1 = 1.6 A BUX48

A

ÎÎÎÎÎ

(TC = 100C)

ÎÎÎÎÎ

tc

ÎÎÎÎ

—

ÎÎÎ

0.3

ÎÎÎÎ

0.6

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎ

B1

A

ÎÎÎÎÎ

(C)

ÎÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎ

0.17

ÎÎÎÎ

0.35

ÎÎÎ

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle  2%.

Vcl = 300 V, VBE(off) = 5 V, Lc = 180µH

BUX48 BUX48A

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3

C, CAPACITANCE (pF)

, COLLECTOR CURRENT (A)µIC

VBE, BASE-EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

IC, COLLECTOR CURRENT (AMPS)

0.3 3

2

1

0.7

0.5

5

IC, COLLECTOR CURRENT (AMPS)

3

2

1

0.7

0.5

0.3

0.2

0.3

IC = 5 A

50

1

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

12 3 5 8 10 20 30 50

20

10

7

Figure 2. Collector Saturation Region

0.1

IB, BASE CURRENT (AMPS)

0.1

0.3 0.5

3

0.5

0.3

30

hFE, DC CURRENT GAIN

5

3

2

VCE = 5 V

1234

Figure 3. Collector–Emitter Saturation Voltage

1011 2 3 7 10 5020 305

Figure 4. Base–Emitter Voltage

Figure 5. Collector Cutoff Region

10

5

1

-0.4

Figure 6. Capacitance

VBE, BASE-EMITTER VOLTAGE (VOLTS)

10-1

-0.2 0 0.2 0.4 0.6

10 k

1

VR, REVERSE VOLTAGE (VOLTS)

10 10

1 k

100

100 1000

100

FORWARD

0.1

VCE = 250 V

125°C

90%

75°C

7.5 A

TC = 25°C

TJ = 25°C

TJ = 100°C

REVERSE

101

102

103

104

Cib

βf = 5

10% 10 A 15 A

90%

10%

TJ = 150°C

100°C

25°C

Cob

TJ = 25°C

DC CHARACTERISTICS

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Table 1. Test Conditions for Dynamic Performance

VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

INPUT

CONDITIONS

CIRCUIT

VALUES

TEST CIRCUITS

20

1

0

PW Varied to Attain

IC = 200 mA

Lcoil = 25 mH, VCC = 10 V

Rcoil = 0.7 Ω

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 20 V

VCC = 300 V

RL = 83 Ω

Pulse Width = 10 µs

INDUCTIVE TEST CIRCUIT

TURN–ON TIME

IB1 adjusted to

obtain the forced

hFE desired

TURN–OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

t1 Adjusted to

Obtain IC

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE TEST CIRCUITOUTPUT WAVEFORMS

2

IB1

1

2

Vclamp = 300 V

RB ADJUSTED TO ATTAIN DESIRED IB1

+10 V

220 100

680 pF 100

PULSES

δ = 3%

33

2 W

33

2 W

160

D1 22 µF

D3

22

680 pF

MM3735

1N4934D1D2D3D4

2N3763

160

680 pF 22

D4

0.22 µF

D3

2N6438

+10 V

MR854

0.1 µF

2N6339

MR854

Ib1 ADJUST

dTb ADJUST

Ib2 ADJUST

VCC

t1

IC

VCE

IC(pk) tf Clamped

tf

t

t2

TIME

VCE or

Vclamp

1

2

TUT

RL

VCC

t1 ≈Lcoil (ICpk)

VCC

t2 ≈Lcoil (ICpk)

VClamp

1

INPUT

2

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1 Ω

1N4937

OR

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

VBE(off), BASE-EMITTER VOLTAGE (VOLTS)

Figure 7. Inductive Switching Measurements Figure 8. Peak–Reverse Current

12 34 5 6

10

8

6

4

2

0

, BASE CURRENT (AMPS)IB2(pk)

0

βf = 5

IC = 10 A

trv

TIME

IC

VCE

90% IB1

tsv

IC pk VCE(pk)

90% VCE(pk) 90% IC(pk)

10% VCE(pk) 10%

IC pk 2% IC

IB

tfi tti

tc

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5

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times

have been defined and apply to both current and voltage

waveforms since they are in phase. However, for inductive

loads which are common to SWITCHMODE power

supplies and hammer drivers, current and voltage

waveforms are not in phase. Therefore, separate

measurements must be made on each waveform to

determine the total switching time. For this reason, the

following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp

trv = Voltage Rise Time, 10–90% Vclamp

tfi = Current Fall Time, 90–10% IC

tti = Current Tail, 10–2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

An enlarged portion of the inductive switching

waveforms is shown in Figure 7 to aid in the visual identity

of these terms.

For the designer, there is minimal switching loss during

storage time and the predominant switching power losses

occur during the crossover interval and can be obtained

using the standard equation from AN–222:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi  tc. However, at lower test currents

this relationship may not be valid.

As is common with most switching transistors, resistive

switching is specified a t 2 5C and has become a benchmark

for designers. However, for designers of high frequency

converter circuits, the user oriented specifications which

make this a “SWITCHMODE” transistor are the inductive

switching speeds (tc and tsv) which are guaranteed at 100C.

1

Figure 9. Storage Time, tsv

IC, COLLECTOR CURRENT (AMPS)

25

0.1

Figure 10. Crossover and Fall Times

5

3

1

0.7

0.5

50

IC, COLLECTOR CURRENT (AMPS)

37

0

Figure 11. Turn–Off Times versus Forced Gain

βf, FORCED GAIN

0.01 12 45

2

0.5

0.3

0.2

Figure 12. Turn–Off Times versus Ib2/Ib1

Ib2/Ib1

3

1

0.1

3

TC = 25°C

IC = 10 A

VBE(off) = 5 V

0.01

1

0.5

0.2

0.3

0.1

t, TIME (s)µ

2

0.3

0.2

2010 30

βf = 5

t, TIME (s)µ

0.05

0.02

0.03

12 5 5037 2010 30

βf = 5

tc

tfi

0.05

0.03

0.02

689710

tsv

tfi

tc

t, TIME (s)µ

0.01

2

0.5

0.3

0.2

3

1

0.1

0.05

0.03

0.02

01 2 4 53689710

TC = 25°C

IC = 10 A

βf = 5

tsv

tfi

tc

TC = 25°C

TC = 100°C

TC = 25°C

INDUCTIVE SWITCHING

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The Safe Operating Area figures shown in Figures 12 and 13

are specified for these devices under the test conditions

shown.

1

Figure 13. Forward Bias Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

550

0.01

30

10

2

1

5

0.5

100010 100

0

Figure 14. Reverse Bias Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0200 400

40

20

50

600

TC = 25°C

TC = 100°C

IC/IB1 ≥ 5

IC, COLLECTOR CURRENT (AMPS)

0.1

200

DC 1 ms

IC, COLLECTOR CURRENT (AMPS)

tr ≤ 0.7 µs

LIMIT ONLY

FOR TURN ON

2 20 500

30

10

0.2

0.05

0.02

800 100

0

VBE(off) = 5 V

BUX48 BUX48A

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 13 is based on TC = 25C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated when TC  25C. Second breakdown limitations do

not derate the same as thermal limitations. Allowable

current at the voltages shown on Figure 13 may be found at

any case temperature by using the appropriate curve on

Figure 15.

TJ(pk) may be calculated from the data in Figure 13. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished b y several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during

reverse biased turn–off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 14 gives RBSOA characteristics.

0

Figure 15. Power Derating

TC, CASE TEMPERATURE (°C)

040 80

80

40

100

120

POWER DERATING FACTOR (%)

160 200

60

20

SECOND BREAKDOWN

DERATING

THERMAL

DERATING

BUX48 BUX48A

http://onsemi.com

7

t, TIME (ms)

1

0.01

0.02

0.5

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.05 1 2 5 10 20 50 100 200 500

RθJC(t) = r(t) RθJC

θJC = 1°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.01

SINGLE PULSE

0.1

0.1 0.50.2

RESISTANCE (NORMALIZED)

1000 2000

Figure 16. Thermal Response

SINGLE

PULSE

0.05

0.02

OVERLOAD CHARACTERISTICS

0

Figure 17. Rated Overload Safe Operating Area

(OLSOA)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

300

100

40

60

500100 400

TC = 25°C

IC, COLLECTOR CURRENT (AMPS)

450200

20

tp = 10 µsBUX48

BUX48A

80

OLSOA

OLSOA applies when maximum collector current is

limited and known. A good example is a circuit where an

inductor is inserted between the transistor and the bus, which

limits the rate of rise of collector current to a known value.

If the transistor is then turned off within a specified amount

of time, the magnitude of collector current is also known.

Maximum allowable collector–emitter voltage versus

collector current is plotted for several pulse widths. (Pulse

width is defined as the time lag between the fault condition

and the removal of base drive.) Storage time of the transistor

has been factored into the curve. Therefore, with bus voltage

and maximum collector current known, Figure 17 defines

the maximum time which can be allowed for fault detection

and shutdown of base drive.

OLSOA is measured in a common–base circuit (Figure

19) which allows precise definition of collector–emitter

voltage and collector current. This is the same circuit that is

used to measure forward–bias safe operating area.

0

Figure 18. IC = f(dV/dt)

dV/dt (KV/µs)

24

4

2

5

6810

3

1

IC (AMP)

500 µF

500 V

VEE

VCC

Figure 19. Overload SOA Test Circuit

Notes:

•VCE = VCC + VBE

•Adjust pulsed current source

for desired IC, tp

RBE = 100 Ω

RBE = 10 Ω

RBE = 2.2 Ω

RBE = 0

BUX48 BUX48A

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8

PACKAGE DIMENSIONS

CASE 1–07

ISSUE Z

TO–204AA (TO–3)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

A

N

E

C

K

–T– SEATING

PLANE

2 PL

D

M

Q

M

0.13 (0.005) Y M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

UL

GB

V

H

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