TO-92 Plastic-Encapsulate Transistors @>~ 144 TO-92 1.EMITTER 2.BASE 3.COLLECTOR - N) ESS - - + e $9012 TRANSISTOR(PNP) FEATURES lcm: -O0.5A Vieryceo: -40 V age junction temperature range Ts, Tstg: -55C to + 150 ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Coliector-base breakdown voltage ViBR)cBo Ic= -100n A, le=0 -40 Vv Collector-emitter breakdown voltage ViBR)cEO Ic= -0.1 mA, Ip=0 -25 Vv Emitter-base breakdown voltage ViBR)EBO le= -100 A, Ic=0 5 Vv Collector cut-off current IcBo Vcp= -40 V, le=0 0.1 vA Collector cut-off current Iceo Vce= -20 V, la=0 -0.2 LA Emitter cut-off current lego Ves= -5 V, Ic=0 -0.1 BA rec) Vee= -1 V, Ic= -50 mA 64 300 DC current gain Ree) Vce= -1 V, ic= -500 mA 40 Collector-emitter saturation voltage Vcesat Ic= -500 mA, le= -50 mA -0.6 Vv Base-emitter saturation voltage Vegsat Ic= -500 mA, la= -50 mA -1.2 Vv Base-emitter voltage Ves le= -100mMA -1.4 Vv Vce= -6 V, Ic= -20 mA Transition frequency fr 150 MHz f =30MHz Rank D E F G H | Range 64-91 78-112 96-135 112-166 144-202 190-300 Typical Characteristics $9012 =-300UA 00 - Veg = -1V La 14 2-250UA le=-200UA < % . Oo 2% & _ le=-150UA 5 - 100 o 0 Len te=-100UA & ww a o 3 ee a _ |e 50uA 2 < -10 z 2 - an 40 10 Bt] -10 -20 30 40 50 -10 -100 -1000 Vce[V], COLLECTOR-EMITTER VOLTAGE iclmA], COLLECTOR CURRENT Static Characteristic DC current Gain 700 8 4000 2 Mee sat 8 | Vees6V 5 x Oo a. > / = z fe} . = 100 g 3 2 eH -100 . . $s : : ra Vce sat z - < i a S to - z > > % c=10lg o Rn 8 = -10 2 1 - > -10 -100 -1000 =, 1 -10 -100 -1000 -10000 Ic{mA], COLLECTOR CURRENT lemA}, COLLECTOR CURRENT Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector-Emitter Saturation Voltage