
Features
1 of 10
Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SBB5089Z
50MHz to 6000MHz, CASCADABLE
ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
RFMD’s SBB5089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB5089Z does
not require a dropping resistor as compared to typical Darlington amplifi-
ers. The SBB5089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Gain and Return Loss versus Frequency
(with BiasTees)
-40.0
-30.0
-20.0
-10.0
0.0
10.0
20.0
30.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency (GHz)
Gain and Return Loss (dB)
25C
25C
25C
Wideband Flat Gain to 4GHz:
±1.1dB
P1dB=20.4dBm at 1950MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Wideband Intrumentation
Wireless Data, Satellite Termi-
nals
DS130718
Package: SOT-89
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 19.0 20.5 22.0 dB 850MHz
18.5 20.0 21.5 dB 1950MHz
14.5 16.0 17.5 dB 6000MHz
Output Power at 1dB Compression 20.5 dBm 850MHz
19.0 20.5 dBm 1950MHz
Third Order Intercept Point 38.5 dBm 850MHz
33.0 35.0 dBm 1950MHz
Bandwidth 3000 MHz Min. 10dB return loss (typ.)
Input Return Loss 10.0 14.0 dB 1950MHz
Output Return Loss 10.0 14.0 dB 1950MHz
Reverse Isolation 23.3 dB 1950MHz
Noise Figure 4.2 4.9 dB 1950MHz
Device Operating Voltage 5.0 5.25 V
Device Operating Current 65.0 75.0 92.0 mA
Thermal Resistance 69.9 °C/W junction - lead
Test Conditions: VD=5V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-dBm, TL=25°C, ZS=ZL=50Tested with Bias Tees