RN1101FV∼RN1106FV
2004-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101FV, RN1102FV, RN1103FV
RN1104FV, RN1105FV, RN1106FV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Ultra-small package, suited to very high density mounting
Incorporating bias resistance into the transistor reduces the number of
parts, so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to RN2101FV~RN2106FV
Equivalent Circuit and Bias Resister Values
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage
RN1101FV~1106FV
VCEO 50 V
RN1101FV~1104FV 10
Emitter-base voltage
RN1105FV, 1106FV
VEBO
5
V
Collector current IC 100 mA
Collector power dissipation PC(Note) 150 mW
Junction temperature Tj 150 °C
Storage temperature range
RN1101FV~1106FV
Tstg −55~150 °C
Note : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)
JEDEC ―
JEITA ―
TOSHIBA 2-1L1A
Weight: 0.0015 g(typ.)
Unit in mm
Type No. R1 (kΩ) R2 (kΩ)
RN1101FV 4.7 4.7
RN1102FV 10 10
RN1103FV 22 22
RN1104FV 47 47
RN1105FV 2.2 47
RN1106FV 4.7 47
0.5mm
0.45mm
0.45mm
0.4mm
1
2
3
0.80 ± 0.05
0.32 ± 0.05
0.22 ± 0.05
0.8 ± 0.05
0.4
1.2 ± 0.05
1.2 ± 0.05
0.13 ± 0.05
0.5 ± 0.05
1
0.4
VESM
1.BASE
2.EMITTER
3.COLLECTOR
RN1101FV∼RN1106FV
2004-06-07
2
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
ICBO VCB = 50V, IE = 0 ― ― 100
Collector cut-off
current RN1101FV~1106FV
ICEO
―
VCE = 50V, IB = 0 ― ― 500
nA
RN1101FV 0.82 ― 1.52
RN1102FV 0.38 ― 0.71
RN1103FV 0.17 ― 0.33
RN1104FV
VEB = 10V, IC = 0
0.082 ― 0.15
RN1105FV 0.078 ― 0.145
Emitter cut-off current
RN1106FV
IEBO ―
VEB = 5V, IC = 0
0.074 ― 0.138
mA
RN1101FV 30 ― ―
RN1102FV 50 ― ―
RN1103FV 70 ― ―
RN1104FV 80 ― ―
RN1105FV 80 ― ―
DC current gain
RN1106FV
hFE ― V
CE = 5V, IC = 10mA
80 ― ―
Collector-emitter
saturation voltage RN1101FV~1106FV VCE (sat) ― I
C = 5mA, IB = 0.25mA ― 0.1 0.3 V
RN1101FV 1.1 ― 2.0
RN1102FV 1.2 ― 2.4
RN1103FV 1.3 ― 3.0
RN1104FV 1.5 ― 5.0
RN1105FV 0.6 ― 1.1
Input voltage (ON)
RN1106FV
VI (ON) ― VCE = 0.2V, IC = 5mA
0.7 ― 1.3
V
RN1101FV~1104FV 1.0 ― 1.5
Input voltage (OFF)
RN1105FV, 1106FV
VI (OFF) ― VCE = 5V, IC = 0.1mA
0.5 ― 0.8
V
Transition frequency RN1101FV~1106FV fT ― VCE = 10V, IC = 5mA ― 250 ― MHz
Collector output
capacitance RN1101FV~1106FV Cob ― VCB = 10V, IE = 0,
f = 1MHz ― 3 ― pF
RN1101FV 3.29 4.7 6.11
RN1102FV 7 10 13
RN1103FV 15.4 22 28.6
RN1104FV 32.9 47 61.1
RN1105FV 1.54 2.2 2.86
Input resistor
RN1106FV
R1 ― ―
3.29 4.7 6.11
kΩ
RN1101FV~1104FV 0.9 1.0 1.1
RN1105FV 0.0421 0.0468 0.0515
Resistor ratio
RN1106FV
R1/R2 ― ―
0.09 0.1 0.11
RN1101FV∼RN1106FV
2004-06-07
3
RN1103FV RN1104FV
RN1105FV RN1106FV
RN1102FV
RN1102FT
RN1101FV
RN1101FV∼RN1106FV
2004-06-07
4
RN1101FV RN1102FV
RN1103FV RN1104FV
RN1105FV
RN1106FV
RN1101FV∼RN1106FV
2004-06-07
5
RN1101FV RN1102FV
RN1103FV RN1104FV
RN1105FV RN1106FV
RN1101FV∼RN1106FV
2004-06-07
6
RN1101FV RN1102FV
RN1103FV RN1104FV
RN1105FV RN1106FV
RN1101FV∼RN1106FV
2004-06-07
7
Type Name Marking
RN1101FV
RN1102FV
RN1103FV
RN1104FV
RN1105FV
RN1106FV
XA
XB
XC
XD
XE
XF
RN1101FV∼RN1106FV
2004-06-07
8
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
