=) TECHNICAL DATA ON30132 NPN Silicon Small-Signal Transistor designed for general-purpose switching applications. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector Base Voltage Emitter-Base Vollage Collector Current Power Dissipation @taq-25C Derate above 25 C @1c=28C Derate above 25 C Operating Junction and Storage Temperature Range Symbol Value VcEO 20 VcES 40 coBao 40 VEBO 5.0 le 300 PT 0.36 21 12 686 Ty. Tsig -65 to 200 ELECTRICAL, CHARACTERISTICS (Ta - 25 C unless otherwise noted ) OFF CHARACTERISTICS Collector Emitter Breakdown Voitage!!) (Iq = 10 mAdc) Collector Emitter Breakdown Voltage {ig = 100 pAdc) Collector-Base Breakdown Voitage (ig = 100 pAdc) Emitter-Base Breakdown Voltage (ig = 100 pAdc! Collector Emitter Cutott Current (VcE = 20 Vac) (Vop = 20 Vac. Tax 128 C} ViBR)CEO SEMICONDUCTOR aaa CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 Unit Vode. Vde Vde Vdc mAdc Waits mwrc Watis mw C CASE 27-02, STYLE 1 TO-206AC (TO-52)CRYSTALONCS 2805 Veterans Highway Suite 14 > eae Ronkonkoma, N.Y. 11779 ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic | symbot [win | Max Unit ON CHARACTERISTICS DC Current Gain(") hE _ (i = 30 mAdc, VcE = 0.4 Vde) 35 120 (ig = 100 mAde, VE = 0.5 Vac) 30 _ (i = 300 mAdge, VcE = 1.0 Vdc} 15 = (Ig = 30 MAde, VCE = 0.4 Vde, Ta = 55C) 15 ~ Collector-Emitler Saturation Vattage!t) VoE(sat) Vac {Ic = 30 mAdc, Ig = 3.0 mAdc) - 0.18 (Ig = 100 mAdc, Ig = 10 mAdc) = 0.28 (ig = 300 mAde, Ip = 30 mAde) _ 05 (ic = 30 MAdc, Ig = 3.0 mAdc, Ta = 125C) _ 0.25 Base-Emitter Saturation Vottage!1) VBE (sat) Vde (ig = 30 mAde, Ip = 3.0 mAdc} 0.75 0.95 (Ic = 100 mAdc, Ig = 10 mAde) = 12 (Ig = 300 mAdc, ig = 30 mAdc) . 7 SMALL-SIGNAL CHARACTERISTICS 3 Smali-Signal Current Transfer Ratio, Magnitude ihtel a5 12 ~ (Ic = 30 mAdc. Veg = 10 Vde, f = 100 MHz) Output Capacitance Cobo _- 50 pF (Vop = 5.0 Vdc, f = 140 kHz) Input Capacitance Cibo - 8a pF (VBE = 0.5 Vdc, t = 140 kHz) SWITCHING CHARACTERISTICS (Sge Figures 8. 13) Turn-On Time ton _ 15 ns Turn-Oft Time . tott - 25 ns Storage Time ts _ 18 ns ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 30 +5C, Vop 2 10 Vde Py = 360 mW Initial and End Point Limits Characteristica Tested Symbol Min Max Unit Collector Cutott Current Ices oa pAde (VCE = 20 Vde) DC Current Gain(") NEE 35 120 (Ic = 30 mAdc, VcE = 0.4 Vde) Delta from Pre-Burn-in Measured Values Min Max - Delta Collector Cutoff Current AIcES ad +100 % of Initial Value nAdc or 150 whichever is greater Delta DC Current Gain?) \HEE = +20 % of Initial Value 111 Pulsed. Pulse Width 250 to 350 4:5 Duty Cycle 1010 2 0 cae te ES MCRAE A ATTN EE ITEC EE A OIE