Document Number: 94373 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 25-Jul-08 1
Inverter Grade Thyristors
(PUK Version), 620 A
ST303CPbF Series
Vishay High Power Products
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case TO-200AB (E-PUK)
• High surge current capability
• Low thermal impedance
• High speed performance
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
Note
•t
q = 10 to 20 µs for 400 to 800 V devices
tq = 15 to 30 µs for 1000 to 1200 V devices
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) 620 A
TO-200AB (E-PUK)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
620 A
Ths 55 °C
IT(RMS)
1180 A
Ths 25 °C
ITSM
50 Hz 7950 A
60 Hz 8320
I2t50 Hz 316 kA2s
60 Hz 289
VDRM/VRRM 400 to 1200 V
tqRange 10 to 30 µs
TJ- 40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
ST303C..C
04 400 500
50
08 800 900
10 1000 1100
12 1200 1300
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2Revision: 25-Jul-08
ST303CPbF Series
Vishay High Power Products Inverter Grade Thyristors
(PUK Version), 620 A
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 1314 1130 2070 1940 6930 6270
A
400 Hz 1260 1040 2190 1880 3440 2960
1000 Hz 900 700 1900 1590 1850 1540
2500 Hz 340 230 910 710 740 560
Recovery voltage Vr50 50 50 V
Voltage before turn-on VdVDRM VDRM VDRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV)
180° conduction, half sine wave
double side (single side) cooled
620 (230) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1180
A
Maximum peak, one half cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
7950
t = 8.3 ms 8320
t = 10 ms 100 % VRRM
reapplied
6690
t = 8.3 ms 7000
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
316
kA2s
t = 8.3 ms 289
t = 10 ms 100 % VRRM
reapplied
224
t = 8.3 ms 204
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3160 klA2√s
Maximum peak on-state voltage VTM
ITM = 1255 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse 2.16
V
Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.44
High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.48
Low level value of forward slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.57 mΩ
High level value of forward slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.56
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Typical latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
180° el
ITM
180° el
ITM
100 µs
ITM
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Revision: 25-Jul-08 3
ST303CPbF Series
Inverter Grade Thyristors
(PUK Version), 620 A Vishay High Power Products
Note
(1) tq = 10 to 20 µs for 400 to 800 V devices; tq = 15 to 30 µs for 1000 to 1200 V devices
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt 1000 A/µs
Typical delay time td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source 0.83
µs
Maximum turn-off time (1)
minimum
tq
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/µs
VR = 50 V, tp = 500 µs, dV/dt: See table in device code
10
maximum 30
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request 500 V/µs
Maximum peak reverse and off-state leakage current IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, f = 50 Hz, d% = 50 60 W
Maximum average gate power PG(AV) 10
Maximum peak positive gate current IGM
TJ = TJ maximum, tp ≤ 5 ms
10 A
Maximum peak positive gate voltage + VGM 20 V
Maximum peak negative gate voltage - VGM 5
Maximum DC gate currrent required to trigger IGT TJ = 25 °C, VA = 12 V, Ra = 6 Ω200 mA
Maximum DC gate voltage required to trigger VGT 3V
Maximum DC gate current not to trigger IGD TJ = TJ maximum, rated VDRM applied 20 mA
Maximum DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.09
K/W
DC operation double side cooled 0.04
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.020
DC operation double side cooled 0.010
Mounting force, ± 10 % 9800
(1000)
N
(kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)
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4Revision: 25-Jul-08
ST303CPbF Series
Vishay High Power Products Inverter Grade Thyristors
(PUK Version), 620 A
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.010 0.010 0.007 0.007
TJ = TJ max. K/W
120° 0.012 0.012 0.012 0.013
90° 0.015 0.015 0.016 0.017
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.037
0250 300 350 400
Maximum Allowable
Heatsink Temperature (°C)
Average On-State Current (A)
50 100 150 200
40
50
60
70
80
90
100
110
120
130
ST303C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.09 K/W
Ø
Conduction angle
60°30° 90°
120°
180°
0500 600 700
Average On-State Current (A)
100 300
200 400
Maximum Allowable
Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
ST303C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.09 K/W
Ø
Conduction period
30°
60° 90°
120°
180°
DC
0400300 500 600 700 800
Average On-State Current (A)
100 200
Maximum Allowable
Heatsink Temperature (°C)
30
20
40
50
60
70
80
90
100
110
120
130
30° 60° 90°
180°
ST303C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.04 K/W
Ø
Conduction angle
120°
Average On-State Current (A)
Maximum Allowable
Heatsink Temperature (°C)
0600 800 1000 1200
200 400
20
30
40
50
60
70
80
90
100
110
120
130
ST303C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.04 K/W
Ø
Conduction period
30° 60°
DC
180°
90° 120°
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Revision: 25-Jul-08 5
ST303CPbF Series
Inverter Grade Thyristors
(PUK Version), 620 A Vishay High Power Products
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Average On-State Current (A)
Maximum Average On-State
Power Loss (W)
0500 600 700 800
100 300200 400
0
200
400
600
800
1000
1200
1400
1600
1800
2000
RMS limit
180°
120°
90°
60°
30°
Ø
Conduction angle
ST303C..C Series
TJ = 125 °C
Maximum Average On-State
Power Loss (W)
0400 600 800 1000 1200
200
Average On-State Current (A)
0
400
800
1200
1600
2000
2400
2800
DC
180°
120°
90°
60°
30°
RMS limit
ST303C..C Series
TJ = 125 °C
Ø
Conduction period
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Peak Half Sine Wave
On-State Current (A)
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated VRRM applied following surge
ST303C..C Series
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave
On-State Current (A)
3000
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
No voltage reapplied
Rated VRRM reapplied
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained
Initial TJ = 125 °C
ST303C..C Series
100
012345678
1000
10 000
Instantaneous On-State Current (A)
Instantaneous On-State Voltage (V)
ST303C..C Series
TJ = 125 °C
TJ = 25 °C
0.01 0.1 1 100.001
1
Square Wave Pulse Duration (s)
Z
thJ-hs
-
Transient Thermal
Impedance (K/W)
0.001
0.01
0.1
ST303C..C Series
Steady state value
RthJ-hs = 0.09 K/W
(Single side cooled)
RthJ-hs = 0.04 K/W
(Double side cooled)
(DC operation)
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6Revision: 25-Jul-08
ST303CPbF Series
Vishay High Power Products Inverter Grade Thyristors
(PUK Version), 620 A
Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovered Current Characteristics
Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
2010 30 50 70 9040 60 80 100
dI/dt - Rate of Fall of On-State Current (A/µs)
Qrr - Maximum Reverse Recovery Charge (µC)
80
100
120
140
160
180
200
220
240
260
280
300
320
ST303C..C Series
TJ = 125 °C
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
20
20 30 50 70 9010 40 60 80 100
40
60
80
100
120
140
160
180
dI/dt - Rate of Fall of Forward Current (A/µs)
Irr - Maximum Reverse Recovery Current (A)
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
ITM = 50 A
ST303C..C Series
TJ = 125 °C
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
t
p
ST303C..C Series
Sinusoidal pulse
TC = 40 °C
50 Hz
100
200
500
400
1000
1500
2500
3000
2000
100
10 100 1000 10 000
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
t
p
ST303C..C Series
Sinusoidal pulse
TC = 55 °C
50 Hz
100
500
400
1000
1500
2500
2000
3000
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
200
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
ST303C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 50 A/µs
tp
50 Hz
100
500 400
1000
1500
2500
2000
3000
200
10 100 1000 10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
100
1000
10 000
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
ST303C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 50 A/µs
tp
50 Hz
100
500 400
1000
1500
2500 2000
3000
200
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Revision: 25-Jul-08 7
ST303CPbF Series
Inverter Grade Thyristors
(PUK Version), 620 A Vishay High Power Products
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
ST303C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 100 A/µs
tp
50 Hz
100
500
400
1000
1500
2500
2000
3000
200
10 100 1000 10 000
100
1000
10 000
Pulse Basewidth (µs)
Peak On-State Current (A)
Snubber circuit
Rs = 10 Ω
Cs = 0.47 µF
VD = 80 % VDRM
ST303C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 100 A/µs
t
p
50 Hz
100
500
400
1000
1500
2500
2000
3000
200
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
100 000
tp
ST303C..C Series
Sinusoidal pulse
0.4
0.5
2
5
3
1
10
20 joules per pulse
Pulse Basewidth (µs)
Peak On-State Current (A)
10 100 1000 10 000
10
100
1000
10 000
100 000
ST303C..C Series
Rectangular pulse
dI/dt = 50 A/µs
tp
0.4
0.5
2
5
3
1
10
20 joules per pulse
0.1
1
10
100
0.001
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.01 0.1 1 10 100
VGD
IGD
(b)
(1) (2) (3) (4)
Device: ST303C..C Series Frequency limited by PG(AV)
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r ≤ 1 µs
(a)
TJ = 40 °C
TJ = 25 °C
TJ = 125 °C
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8Revision: 25-Jul-08
ST303CPbF Series
Vishay High Power Products Inverter Grade Thyristors
(PUK Version), 620 A
ORDERING INFORMATION TABLE
3 = Fast-on terminals
1- Thyristor
2- Essential part number
3- 3 = Fast turn-off
4- C = Ceramic PUK
5- Voltage code x 100 = VRRM
10
6- C = PUK case TO-200AB (E-PUK)
7- Reapplied dV/dt code (for tq test condition)
8-t
q code
9- 0 = Eyelet terminals
1 = Fast-on terminals
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
10
12
CN DN EN
tq (µs)
2 = Eyelet terminals
11
- Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
- P = Lead (Pb)-free
* Standard part number.
All other types available only on request.
15 CL DL EL FL* HL
FN* HN
CM DM EM FM HM
20 CK DK EK FK* HK
15
18
CL - -
20 CK DK EK FK* HK
--
CP DP - -
25 CJ DJ EJ FJ* HJ
up to 800 V
tq (µs)
only for
1000/1200 V 30 -DHEHFHHH
-
(see Voltage Ratings table)
(gate and aux. cathode unsoldered leads)
(gate and aux. cathode unsoldered leads)
(gate and aux. cathode soldered leads)
(gate and aux. cathode soldered leads)
Device code
51 324
6 7 8 9 10 11
ST 30 3 C 12 C H K 1 - P
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95075
Document Number: 95075 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 01-Aug-07 1
TO-200AB (E-PUK)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
4.75 (0.19)
28 (1.10)
6.5 (0.26)
0.3 (0.01) MIN.
0.3 (0.01) MIN.
25.3 (0.99)
DIA. MAX.
14.1/15.1
(0.56/0.59)
25° ± 5°
25.3 (0.99)
DIA. MAX.
40.5 (1.59) DIA. MAX.
42 (1.65) MAX.
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
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Revision: 02-Oct-12 1Document Number: 91000
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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