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Silicon Transistor
Maximum Ratings:
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 60
V
Collector-Emitter Voltage VCEO 40
Emitter Base Voltage VEBO 7
Continuous Collector Current IC1 A
Total Device Dissipation -(TA = +25°C),
Derate Above 25°C
PD
1
5.72 W
mW/°C
Total Device Dissipation -(TC = +25°C),
Derate Above 25°C
5
28.6
Operating Junction Temperature Range TJ-65 to +200 °C
Storage Temperature Range Tstg
Thermal Resistance, Junction-to-Case RthJC 35 °C/W
Lead temperature
(During Soldering, 1/16" from case, 60sec max) TL300 °C
Description:
A silicon PNP transistor in a TO-39 type case designed primarily for amplier and switching applications. This device features
high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range.
Collector
3
2
Base
1
Emitter
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Page <2> V1.023/04/13
Silicon Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Part Number Table
Description Part Number
Transistor, PNP ,1A, 40V, TO-39 2N4037
Dimensions : Millimetres
Dim A B C D E F G H J K L
Min. 8.5 7.74 6.09 0.4 - 2.41 4.82 0.71 0.73 12.7 42°
Max. 9.39 8.5 6.6 0.53 0.88 2.66 5.33 0.86 1.02 - 48°
Electrical Characteristics: (TA = +25°C Unless otherwise specied)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector-Emitter Breakdown Voltage V(BR)CEO lC = 100mA, IB = 0 40
-
- V
Collector-Base Breakdown Voltage V(BR)CBO lC = 100µA, IE = 0 60
Collector Cut-Off Current ICBO VCB= 60V, IE = 0 - 250 nA
Emitter Cut-Off Voltage IEBO VBE= 5V, IC = 0 1 µA
ON Characteristics (Note 1)
DC Current Gain hFE
VCE = 10V, lC = 1mA 15
-
--
VCE = 10V, lC = 150mA 50 250
Collector-Emitter Saturation Voltage VCE(sat) lC = 150mA, lB = 15mA -1.4 V
Base-Emitter On Voltage VBE(on) VCE = 10V, lC = 150mA 1.5
Small-Signal Characteristics
Small-Signal Current Gain hfe VCE = 10V, lC = 50mA, f = 20MHz 3 - - -
Note:
1. Pulse Test : Pulse Width 300µs, Duty Cycle 1%
≤≤
Collector
3
2
Base
1
Emitter
