5SDF 12T2505 5SDF 12T2505 Old part no. DM 818C-1200-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Snubber diode Freewheeling diode Key Parameters = 2 500 V RRM = 1 256 I FAVm = 19 000 I FSM = 1.195 V TO = 0.245 rT V A A V m Types VRRM 5SDF 12T2505 2 500 V Conditions: Tj = -40 / 125 C, half sine waveform, f = 50 Hz Mechanical Data Fm Mounting force 22 2 kN m Weight DS Surface creepage distance 22 mm Da Air strike distance 14 mm 0.44 kg Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - DM/266/08b Nov-12 1 of 10 5SDF 12T2505 Maximum Ratings VRRM Repetitive peak reverse voltage Maximum Limits Unit 2 500 V 1 256 A 1 973 A 50 mA Tj = -40 / 125 C IFAVm Average forward current Tc = 85 C IFRMS RMS forward current Tc = 85 C IRRM Repetitive reverse current VR = VRRM IFSM I2t Non repetitive peak surge current tp = 8.3 ms 20 300 A VR = 0 V, half sine pulse tp = 10 ms 19 000 A Limiting load integral tp = 8.3 ms 1 710 000 A2s VR = 0 V, half sine pulse tp = 10 ms 1 805 000 A2s Tjmin -Tjmax Operating temperature range -40 / 125 C TSTG Storage temperature range -40 / 125 C Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - DM/266/08b Nov-12 2 of 10 5SDF 12T2505 Characteristics Value min typ Unit max VT0 Threshold voltage 1.195 V rT Forward slope resistance 0.245 m 1.690 V 500 700 C 160 230 A 5.0 s IF1 = 1 885 A, IF2 = 5 655 A VFM Maximum forward voltage IFM = 2 000 A Qrr Recovered charge VR = 100 V, IFM = 1000 A, di/dt = -80 A/s IrrM Reverse recovery maximum current the same conditions as at Qrr trr Reverse recovery time the same conditions as at Qrr S Soft factor, S = t s / tf 2.0 - IFM = 1 000 A, diF/dt = -200 A/s, VR = 400 V IrrM Reverse recovery maximum current 400 A 1 100 V the same conditions as at S VrrM Reverse recovery maximum voltage the same conditions as at S Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - DM/266/08b Nov-12 3 of 10 5SDF 12T2505 Thermal Parameters Rthjc Rthch Thermal resistance junction to case Thermal resistance case to heatsink Value Unit double side cooling 15 K/kW anode side cooling 24 cathode side cooling 40 double side cooling 4 single side cooling 8 K/kW Transient Thermal Impedance Analytical function for transient thermal impedance i 1 2 3 4 5 i ( s ) 0.6937 0.2040 0.0452 0.0040 0.0005 Ri( K/kW ) 6.04 3.83 3.76 1.31 0.07 5 Ri (1 exp(t / i )) i 1 Conditions: Fm = 22 2 kN, Double side cooled Correction for periodic waveforms 180 sine: 1.3 K/kW 180 rectangular: 1.7 K/kW 120 rectangular: 2.9 K/kW 60 rectangular: 4.8 K/kW 16 Transient thermal impedance junction to case Z thjc ( K/kW ) Z thjc 14 12 10 8 6 4 2 0 0.001 0.01 0.1 1 10 Square w ave pulse duration t d ( s ) Fig. 2 Dependence transient thermal impedance junction to case on square pulse ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - DM/266/08b Nov-12 4 of 10 5SDF 12T2505 Forward Characteristics 6000 IF ( A ) T j = 125C 5000 4000 3000 2000 1000 0 0 1 2 3 VF (V) Fig. 3 Maximum forward voltage drop characteristics ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - DM/266/08b Nov-12 5 of 10 5SDF 12T2505 Surge Characteristics 35 i2dt 2.5 30 2 25 20 IFSM ( kA ) 3 i 2dt (106 A2s) IFSM ( kA ) 40 18 16 14 VR = 0 V 12 20 1.5 10 8 15 I FSM 1 6 V R 0.5 V RRM 10 0.5 4 5 2 0 1 10 t ( ms ) 0 100 Fig. 4 Surge forward current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax 0 1 10 100 Number n of cycles at 50 Hz Fig. 5 Surge forward current vs. number of pulses, half sine wave, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - DM/266/08b Nov-12 6 of 10 5SDF 12T2505 = 60 120 180 PT ( W ) 2500 DC PT ( W ) Power Loss and Maximum Case Temperature Characteristics 270 DC 2000 2000 1500 1500 1000 1000 500 500 0 0 0 500 1000 0 1500 I FAV ( A ) Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f 120 110 110 100 100 DC 1000 1500 I FAV ( A ) 130 120 90 500 Fig. 7 Forward power loss vs. average forward current, square waveform, f = 50 Hz, T = 1/f T C ( C ) T C ( C ) 130 = 30 60 90 120 180 2500 90 DC 270 80 80 = 60 70 0 500 120 1000 180 1500 I FAV ( A ) Fig. 8 Max. case temperature vs. aver. forward current, sine waveform, f = 50 Hz, T = 1/f = 30 70 0 60 90 500 1000 120 180 1500 I FAV ( A ) Fig. 9 Max. case temperature vs. aver. forward current, square waveform, f = 50 Hz, T = 1/f Note 2: Figures number 6 9 have been calculated without considering any forward and reverse recovery losses. They are valid for f = 50 or 60 Hz operation. ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - DM/266/08b Nov-12 7 of 10 5SDF 12T2505 100 vF (t), iF (t) 2000 di F /dt i F (t) V fr ( V ) Forward Recovery Characteristics 150 100 V fr 50 v F (t) 0 10 0 t fr 30 0 0 200 400 600 t Fig. 10 Typical forward recovery voltage waveform when the diode is turned on with high diF/dt 800 1000 di F /dt ( A/s ) Fig. 11 Max. forward recovery voltage vs. rate of rise of forward current, trapezoid pulse, Tj = Tjmax, tfr 10 s ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - DM/266/08b Nov-12 8 of 10 5SDF 12T2505 Qrr ( C ) Reverse Recovery Characteristics I FM vF (t), iF (t) i F (t) 10000 - di F /dt -di F /dt = 400 A/s t rr 200 A/s ts tf v F (t) 5 Q rr I rrM 100 A/s 1000 80 A/s 0.25 I rrM 0.9 I rrM VR V rrM 100 -1000 t -1000 10000 1000 10000 I FM ( A ) Fig. 13 Max. recovered charge vs. forward current, trapezoid pulse, Tj = Tjmax IrrM ( A ) Qrr ( C ) Fig. 12 Typical waveforms and definition of symbols at reverse recovery of a diode, inductive switching without RC snubber 100 1000 I FM = 2000 A 1000 A 500 A I FM = 2000 A 1000 A 500 A 1000 100 100 10 10 100 1000 - di F /dt ( A/s ) Fig. 14 Max. recovered charge vs. rate of fall of forward current, trapezoid pulse, Tj = Tjmax 10 100 1000 - di F /dt ( A/s ) Fig. 15 Max. reverse recovery current vs. rate of fall of forward current, trapezoid pulse, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - DM/266/08b Nov-12 9 of 10 5SDF 12T2505 Notes: ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - DM/266/08b Nov-12 10 of 10