5SDF 12T2505
TS - DM/266/08b Nov-12 1 of 10
5SDF 12T2505
Old part no. DM 818C-1200-25
Fast Recovery Diode
Properties
Key Parameters
Optimized recovery characteristics
VRRM
=
2 500
V
Industry standard housing
IFAVm
=
1 256
A
IFSM
=
19 000
A
Applications
VTO
=
1.195
V
suited for GTO applications
rT
=
0.245
m
Snubber diode
Freewheeling diode
Types
VRRM
5SDF 12T2505
2 500 V
Conditions:
Tj = -40 ÷ 125 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
Fm
Mounting force
22 ± 2
kN
m
Weight
0.44
kg
DS
Surface creepage
distance
22
mm
Da
Air strike distance
14
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5SDF 12T2505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DM/266/08b Nov-12 2 of 10
Maximum Ratings
Maximum Limits
Unit
VRRM
Repetitive peak reverse voltage
Tj = -40 ÷ 125 °C
2 500
V
IFAVm
Average forward current
Tc = 85 °C
1 256
A
IFRMS
RMS forward current
Tc = 85 °C
1 973
A
IRRM
Repetitive reverse current
VR = VRRM
50
mA
IFSM
Non repetitive peak surge current
VR = 0 V, half sine pulse
tp = 8.3 ms
20 300
A
tp = 10 ms
19 000
A
I2t
Limiting load integral
VR = 0 V, half sine pulse
tp = 8.3 ms
1 710 000
A2s
tp = 10 ms
1 805 000
A2s
Tjmin -Tjmax
Operating temperature range
-40 ÷ 125
°C
TSTG
Storage temperature range
-40 ÷ 125
°C
Unless otherwise specified Tj = 125 °C
5SDF 12T2505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DM/266/08b Nov-12 3 of 10
Characteristics
Value
Unit
min
typ
max
VT0
Threshold voltage
1.195
V
rT
Forward slope resistance
IF1 = 1 885 A, IF2 = 5 655 A
0.245
m
VFM
Maximum forward voltage
IFM = 2 000 A
1.690
V
Qrr
Recovered charge
VR = 100 V, IFM = 1000 A, di/dt = -80 A/µs
500
700
µC
IrrM
Reverse recovery maximum current
the same conditions as at Qrr
160
230
A
trr
Reverse recovery time
the same conditions as at Qrr
5.0
µs
S
Soft factor, S = t s / tf
IFM = 1 000 A, diF/dt = -200 A/µs, VR = 400 V
2.0
-
IrrM
Reverse recovery maximum current
the same conditions as at S
400
A
VrrM
Reverse recovery maximum voltage
the same conditions as at S
1 100
V
Unless otherwise specified Tj = 125 °C
5SDF 12T2505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DM/266/08b Nov-12 4 of 10
Thermal Parameters
Value
Unit
Rthjc
Thermal resistance
junction to case
double side cooling
15
K/kW
anode side cooling
24
cathode side cooling
40
Rthch
Thermal resistance
case to heatsink
double side cooling
4
K/kW
single side cooling
8
Transient Thermal Impedance
Analytical function for transient
thermal impedance
5
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 22 ± 2 kN, Double side cooled
Correction for periodic waveforms
180°
sine:
1.3
K/kW
180°
rectangular:
1.7
K/kW
120°
rectangular:
2.9
K/kW
60°
rectangular:
4.8
K/kW
i
1
2
3
4
5
i ( s )
0.6937
0.2040
0.0452
0.0040
0.0005
Ri( K/kW )
6.04
3.83
3.76
1.31
0.07
0
2
4
6
8
10
12
14
16
0.001 0.01 0.1 1 10
Square wave pulse duration td ( s )
Transient thermal impedance
junction to case Zthjc ( K/kW )
Fig. 2
Dependence transient thermal impedance
junction to case on square pulse
5SDF 12T2505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DM/266/08b Nov-12 5 of 10
Forward Characteristics
0
1000
2000
3000
4000
5000
6000
0 1 2 3
VF ( V )
IF ( A )
Tj = 125°C
Fig. 3
Maximum forward voltage drop
characteristics
5SDF 12T2505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DM/266/08b Nov-12 6 of 10
Surge Characteristics
0
5
10
15
20
25
30
35
40
110 100
t ( m s )
IFSM ( kA )
0
0.5
1
1.5
2
2.5
3
i2dt (106 A2s)
IFSM
i2dt
0
2
4
6
8
10
12
14
16
18
20
110 100
Number n of cycles at 50 Hz
IFSM ( kA )
VR = 0 V
VR 0.5 VRRM
Fig. 4
Surge forward current vs. pulse length,
half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
Fig. 5
Surge forward current vs. number
of pulses, half sine wave, Tj = Tjmax
5SDF 12T2505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DM/266/08b Nov-12 7 of 10
Power Loss and Maximum Case Temperature Characteristics
0
500
1000
1500
2000
2500
0500 1000 1500
IFAV ( A )
PT ( W )
120°
180°
DC
= 60°
0
500
1000
1500
2000
2500
0500 1000 1500
IFAV ( A )
PT ( W )
= 30°
60°
90°
120°
180°
270°
DC
Fig. 6
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 7
Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T = 1/f
70
80
90
100
110
120
130
0500 1000 1500
IFAV ( A )
TC ( °C )
180°
120°
DC
= 60°
70
80
90
100
110
120
130
0500 1000 1500
IFAV ( A )
TC ( °C )
180°
DC
270°
120°
90°
60°
= 30°
Fig. 8
Max. case temperature vs. aver. forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 9
Max. case temperature vs. aver. forward
current, square waveform, f = 50 Hz, T = 1/f
Note 2: Figures number 6
9 have been calculated without considering any forward and reverse recovery
losses. They are valid for f = 50 or 60 Hz operation.
5SDF 12T2505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DM/266/08b Nov-12 8 of 10
Forward Recovery Characteristics
0
2000
10 30
t
vF (t), iF (t)
0
100
Vfr
di F/dt
tfr
v F (t)
i F (t)
0
50
100
150
0200 400 600 800 1000
di F/dt ( A/µs )
Vfr ( V )
Fig. 10
Typical forward recovery voltage waveform
when the diode is turned on with high diF/dt
Fig. 11
Max. forward recovery voltage
vs. rate of rise of forward current,
trapezoid pulse, Tj = Tjmax, tfr
10 µs
5SDF 12T2505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DM/266/08b Nov-12 9 of 10
Reverse Recovery Characteristics
-1000
5
t
vF (t), iF (t)
-1000
VrrM
- diF/dt
trr
v F (t)
i F (t)
IrrM
VR
0.25 I rrM
0.9 I rrM
Qrr
IFM
ts
tf
100
1000
10000
100 1000 10000
IFM ( A )
Qrr ( µC )
-di F/dt = 400 A/µs
200 A/µs
100 A/µs
80 A/µs
Fig. 12
Typical waveforms and definition of symbols
at reverse recovery of a diode,
inductive switching without RC snubber
Fig. 13
Max. recovered charge vs. forward
current, trapezoid pulse, Tj = Tjmax
100
1000
10000
10 100 1000
- diF/dt ( A/µs )
Qrr ( µC )
IFM = 2000 A
1000 A
500 A
10
100
1000
10 100 1000
- diF/dt ( A/µs )
IrrM ( A )
IFM = 2000 A
1000 A
500 A
Fig. 14
Max. recovered charge vs. rate of fall
of forward current, trapezoid pulse, Tj = Tjmax
Fig. 15
Max. reverse recovery current
vs. rate of fall of forward current,
trapezoid pulse, Tj = Tjmax
5SDF 12T2505
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - DM/266/08b Nov-12 10 of 10
Notes:
