TSB1132 Low Vcesat PNP Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -40V BVCEO -32V IC -1A VCE(SAT) Features Ordering Information Low VCE(SAT) -0.15 @ IC / IB = --.5A / -50mA (Typ.) Excellent DC current gain characteristics Part No. TSB1132CY RM Structure -0.15V @ IC / IB = -0.5A / -50mA Package Packing SOT-89 1Kpcs / 7" Reel Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -32 -5 V V Collector Current DC Pulse -1 -2.5 (note1) 0.6 IC Collector Power Dissipation PD Operating Junction Temperature TJ Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=10ms, Duty50% 2. When mounted on a 40 x 40 x 0.7mm ceramic board. A W 2 (note 2) +150 TSTG - 55 to +150 o C o C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -40 -- -- V Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC = -1mA, IB = 0 IE = -50uA, IC = 0 BVCEO BVEBO -32 -5 --- --- V V Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage VCB = -20V, IE = 0 VEB = -4V, IC = 0 IC / IB = -0.5A / -50mA ICBO IEBO VCE(SAT) ---- ---0.15 -0.5 -0.5 -0.5 uA uA V DC Current Transfer Ratio VCE = -3V, IC = 100mA VCE =-5V, IC=-50mA, f=100MHz VCB = -10V, f=1MHz hFE 82 -- 390 fT -- 150 -- MHz Cob -- 20 30 pF Transition Frequency Output Capacitance Conditions hFE values are classified as follows: Rank Q R hFE 120~270 180~390 1/1 Version: A08 TSB1132 Low Vcesat PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Power Derating Curve 2/2 Version: A08 TSB1132 Low Vcesat PNP Transistor SOT-89 Mechanical Drawing DIM A B C D E F G H I J 3/3 SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017 Version: A08 TSB1132 Low Vcesat PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A08