fiAMOSPEC PNP SILICON POWER TRANSISTORS ...designed for the output stage of 25VW to 35VW AF power amplifier FEATURES: * Low Collector-Emitter Saturation Voltage Vegjsay 2-0V(Max) @I=4.0A,1,=0.4A * DC Current Gain hFE= 40-320@I,= 1.0A * Complementary to NPN 2SD613 MAXIMUM RATINGS PNP 2SB633 6.0 AMPERE POWER TRANASISTORS 85 VOLTS 40 WATTS Characteristic Symbol 2SB633 Unit Collector-Emitter Voltage VeEo 85 V Collector-Base Voltage Vopo 100 V Emitter-Base Voltage Veso 6.0 V Collector Current - Continuous lo 6.0 A ; - Peak lom 10 B aie yr? 2s Base current I 3.0 A M_[ 7 8 pera Lae Total Power Dissipation @T, = 25C Py 40 Ww Derate above 25C 0.32 wc 13? 6 Operating and Storage Junction Ty. Tst C to D Temperature Range -55 to +150 LE nt gE THERMAL CHARACTERISTICS r 7 PIN 1.BASE Characteristic Symbol Max Unit 2.COLLECTOR Thermai Resistance Junction to Case Rojec 3.125 C/W 4.COLLECTOR(CASE) DIM MILLIMETERS FIGURE -1 POWER DERATING MIN | MAX A 14.68 16.31 B 9.78 10.42 Cc 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 | 4.22 498 J 1.14 1.38 K 2.20 2.97 5 L 0.33 0.55 * 0 M 2.48 2.98 0 25 75 125 150 oO 3.70 3.90 Te , TEMPERATURE( C)2SB633 PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V Vv (1,= 50 mA, 1,=0 ) (enero 85 Collector-Base Breakdown Voltage V Vv (c= 5.0 MA, I-=0 ) pneRe 100 Emitter-Base Breakdown Voltage Vv | Vv (1,= 5.0 mA, I,=0 ) (prieBO 6.0 Collector Cutoff Current leBo uA (Vop= 40 V, |= 0) 100 Emitter Cutoff Current leno uA (Vep 4.0 V, 1,= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (Ig= 1.0 A, Veg= 5.0 V) * hFE(2) 40 320 (1g= 3.0 A, Vee= 5.0 V ) hFE 20 Coliector-Emitter Saturation Voitage Vee(sat) Vv (Ig= 4.0 A, I,= 400 mA ) 2.0 Base-Emitter On Voltage VeE(on) Vv (Ip= 1.0 A, Veg=5.0 V) 1.5 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product f, MHZ (ig = 1.0 A, Veg = 5.0 V, f = 1.0 MHz ) 5.0 (1) Pulse Test: Pulse Width =300: s,Duty Cycle = 2.0% * hFE(2) Classification : | 40 c 80 | 60 D 120 | 100 E 200|160 F 320 ACTIVE-REGION SAFE OPERATING AREA (SOA) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on Typiq=150 C;T is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided -Bonding Wire Limit T es 150C At high case temperatures, thermal limita - ee tion will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 02 at T ,225C (Singe Puise) , COLLECTOR CURRENT (Amp) 0.1 le 1.0 20 30 50 7.0 10 20. 30 50 70 100 200 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS)2SB633 PNP eee eee ee cece ence eee e eee ne ee Ic - Vee DC CURRENT GAIN 5.0 40 < z C z 3.0 55 a 3 & x 5 9 5 5 o Ww 2.0 a a 8 f 2 40 ee) 04 02 05 1.0 2.0 5.0 10 10 20 30 40 50 lc , COLLECTOR CURRENT (AMP) Vce , COLLECTOR-EMITTER VOLTAGE (V) Ic - Vbe f; - Ic 100 70 COMMON EMITTER = B 50 Te=28C < 2 Voez5 V > oi 9 30 x 5 3 i 20 5 f 2 6 - E 10 Oo z s z 70 = 50 3.0 04 06 08 1.0 42 14 0.4 02 05 1.0 20 5.0 40 Vee, BASE - EMITTER VOLTAGE (V) le, COLLECTOR CURRENT (A) "ON" VOLTAGES CAPACITANCES 20 10 Vee(sat)@ Icfg=10 300 ao c F & Hi Os iw 200 a z g 5 ~ 02 < 3 < 2 o > O41 o 4 Vesey @ lo/g=10 0.03 02 2.0 +10 20 5.0 40 20 50 400 IC , COLLECTOR CURRENT (AMP) Vp, REVERSE VOLTAGE(VOLTS)