MOS FIELD EFFECT POWER TRANSISTOR 2SK1284, 1284-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1284/1284-Z is N-channel MOS Field Ef- {in millimeters) fect Transistor designed for solenoid, motor and lamp driver. we 2.3 + 0.2 6520.2 2.3 0.2 ~ FEATURES 5 =03 3 0.5+0.1 5.0 + 0.2 if 10.5 + 0.1 Low On-state Resistance ~ ~ Rosion) 0.32 Q (Ves = 10 V, Ip = 2 A) 3 4 or Z 4 g e Rosion) 0.40 Q (Ves = 4 V, ID = 2 A) A at it ii oli9 | 11 2 3/iis 7 5-3] s fo Low Ciss Ciss = 500 pF TYP. Ss AO Built-in G-S Gate Protection Diode 11402 I Z 5 Plo on af oO B QUALITY GRADE I ~ ian 8 Ne Standard 23) 51 0.6 + 0.1 a al Please refer to Quality grade on NEC Semiconductor *| \o MP-37 Devices (Document number IEI-1209) published by S NEC Corporation to know the specification of quality E: 7? n| grade on the devices and its recommended MP3 1. Gate applications. 2. Drain , 3. Source - ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) 4 Fin Drain \_. Drain to Source Voltage Voss 100 Vv Gate to Source Voltage Vassiac) +20 Vv Drain (D) Drain Current (DC) Ipioc} +3.0 A Drain Current {pulse) ID(pulsey**# = 12 A Total Power Dissipation (Tc = 25 C)Pt: 20 Ww ; we body diode Total Power Dissipation (Ta = 25 C) Pr2 1.0 Ww Gate (G) Channel Temperature Teh 150 C Storage Temperature Tstg -55 to +150 C Gate Protection diode * PW S 10 ps, Duty Cycle S$ 1% . Source (S) Document No. TC-2383 Date Published July 1993 M Printed in Japan NEC Corporation 1993NEC 2SK1284, 1284-2 ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain to Source On-state Resistance Rosion) 0.26 0.32 Q Ves = 10V,lb=2A Drain to Source On-state Resistance Rosony | 0.32 0.40 Q Ves = 4.0 V,lb=2A Gate to Source Cutoff Voltage Vesioth 1.0 2.5 Vv Vos = 10 V,lo=1mA Forward Transfer Admittance | yrs | 2.4 s Vos = 10 V, lb=2A Drain Leakage Current loss 10 HA Vos = 100 V, Ves = 0 Gate to Source Leakage Current Iss +10 HA Ves = +20 V, Vos = 0 Input Capacitance Cies 500 pF Vos = 10 V Output Capacitance Cose 160 pF Ves = 0 Reverse Transfer Capacitance Cres 20 pF f= 1 MHz Turn-On Delay Time taton) 40 ns Vesvem = 10 V Rise Time tr 55 ns Vop = 50 V Turn-Off Delay Time tatotn 500 ns lb=2A,Re= 100 Fall Time t 120 ngs | mee Total Gate Charge Qe 13 nc Ves = 10 V Gate to Source Charge Oss 3 nc lo=3A Gate to Drain Charge Oso . 2 nc Voo = 80 V Diode Forward Voltage Veo 0.9 Vv Isp = 3 A, Ves = 0 Reverse Recovery Time ter 140 ns Ir=3 A, Ves =0 Reverse Recovery Charge Qn 250 nc di/dt = 50 A/us Test Circuit 1: Switching Time TUT. Ru ro@ Re Re 0Q 1 \ t Ves t=1 Duty EYcle =1% Test Circuit 2: Gate Charge Ie=2mA + TUT. Re PG. 502 { I VoNEC 2SK1284, 1284-Z TYPICAL CHARACTERISTICS (Ta = 25 C) DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs. SAFE OPERATING AREA CASE TEMPERATURE 25 Sd 1 = ts 100 \ a N\ = & gg 15 9 g fia IN a 5 60 NN o IN @ 3 10 N oD 3 2 49 a N 2 o e & 20 N ; 8 I N\ a iS N NM 0 20 40 60 80 100 120 140 160 0 40 80 120 160 Te - Case Temperature C Te - Case Temperature C DRAIN CURRENT vs. FORWARD BIAS SAFE OPERATING AREA DRAIN TO SOURCE VOLTAGE 100 12 ~\ A 9 % SE 10 o < $ 10 e 8 Ves = 4 V1 @ = =] oO o 6 a $ y/ a Oo 4 2 4 Y Te = 25C 2 1 Single Pulse Pulsed 1 10 100 1000 0 1 2 3 4 5 6 Vos Drain to Source Voltage - V Vos - Drain to Source Voltage V TRANSFER CHARACTERISTICS 100 Vos = 10V Pulse < 10 ' 5 o & a 1 2 0.1 0.01 0 1 2 3 4 5 6 Ves Gate to Source Voltage ~ VNEC 2SK1284, 1284-Z TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 10 1.0 0.1 Single Pulse 0.01 Channel to 10 100 pt Im 10m 100 m 1 10 PW - Pulse Width - s tin(t) Transient Thermal Resistance C/W FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE VOLTAGE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE = 2 | yte| ~ Forward Transfer Admittance - S Vos ~ Drain to Source Voltage - V 0.1 1 10 0 4 8 12 16 20 lb - Drain Current -A Ves Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs. G RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE Q > 2.5 5 @ Vos = 10 V B > lo = 1mMmA a 2 o <= --_] oat O 8 Ss al B 36 15 3 3 5 Y 1.0 B 2 2 & 8 05 & ! a ! . a g $ 2 0.01 0.1 1 10 100 50 0 50 100 150 Ip Drain Current -A Tech - Channel Temperature CNEC 2SK1284, 1284-Z DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.5 1.0 | Lf . a Vos =4V bo] LT i 05 ~ ID=2A -50 0 50 100 150 Teh - Channel Temperature C Rosion) Drain to Source On-State Resistance ~ Q CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 om a I o Qo c 100 3 = oO i 8 C10 3 Oo 3 Ves = 0 f=1 MHz 1 10 100 Vos Drain to Source Voltage -V DYNAMIC INPUT CHARACTERISTICS 120 12 b=3A 100 Voo = 80 V Ves 10 go Pes 50 V 8 20 V Z 6 60 4 40 20 1 2 Kf 0 0 4 8 12 16 Qy - Gate Charge nC Vos - Drain to Source Voltage - V Ves - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed 10 0.1 Iso ~ Diode Forward Current -A 0.01 0 O02 04 06 O08 10 1.2 14 Vsp Source to Drain Voltage - V SWITCHING CHARACTERISTICS 1000 100 Voo = 50 V Veston = 10 V Re = 10Q 0.1 1 10 Ip Drain Current -A tations, tr, tdiot, tr - Switching Time ns 10 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 200 2 1 o & - 2 eo 3 8 100 oe 8 $ oO oc L Ves = 0 0 difdt = 50 A/us 0.1 1 10 le - Diode Forward Current -ANEC Reference Application note name No. Safe operating area of Power MOS FET. TEA-1034 Application circuit using Power MOS FET. TEA-1035 Quality control of NEC semiconductors devices. TEI-1202 Quality control guide of semiconductors devices. MEI-1202 Assembly manual of semiconductors devices. 1E1-1207 2SK1284, 1284-ZNEC 2SK1284, 1284-2 [MEMO]NEC 2SK1284, 1284-Z [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our Sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6