QUAD DUAL-IN-LINE PNP SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS . . . designed for general-purpose VHF amplifier applications. switching circuits and DC to o Maximum Power Dissipation @ TA = 25C -- MPQ2906, MPQ2907 PD = 1.25 wattS -- MPQ2906A, MPQ2907A High Collector-Base Breakdown Voltage -- = 60 Vdc (Min) @ IC = 10 pAdc V(BR)CBO . DC Current Gain Specified -- 10 to 300 mAdc e High Current-Gain ~ e -- Bandwidth Product -- = 350 MHz (Typ) @ IC = 50 mAdc Similar to 2N2906,A Transistors ,.:4! ~,~.: `~$~ and 2N2907,A e Compact Size Compatible With IC Automatic Insertion Equipmenj CONNECTION c B 4n Collector-Emitter Rating Symbol Voltage VCEO <valu~> .. MP02906A, MPw9,ti>~ ,.,, .+q>$, .,$..!:?.., .:. `" ,~ljt?,,qt}"'+., Collector-Baae Voltage VCB Emitter-Base Voltage VEB,,, `~: ~t~@]"" @*+~\:"J" Collector Current -- Continuous Unit 71 DIAGRAM E E B c 8n n ) Vdc 60 60 Vdc 5.0 Vdc 600 mAdc lU u u u c E B u u E B J c .,.. = Wans Derate above 2YC $~",J;* MP029@~~~z m W/C ` MP.M&*z307A PD Total Power Mssip%h;.@ TC = 25C "s;&&g06/2907 ,:S" ,~Q2906N2907A Derate&&&,&C ..,,.v~ MPQ2906/2907 .;{$,'ab ?,.,,,, . .+* ` MPQ2906N2907A :::.:~,.. ::., Ope@~ and Storage Junction Te#~erature Ranae ti Wans 1.0 rl ----R L 3.0 2.4 0.825 mWIC S.o I 6.7 TJ, Tst9 J- 24 19,2 `c -55 to + 150 M IL THERMAL CHARACTERISTICS NOTES: IJunction to 1. LEAOS WITHIN 0.13 mm (0.0051 RAOIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONOITION. Case Characteristic `CM 193 2. OIMENSION "~ TO CENTER OF LEAOS WHEN FORMEO 250 100 134 PARALLEL. 3. OIMENSION "B" OOES NOT INCLUOE MOLO FLASH. 4. ROUNOEO CORNERS OPTIONAL, "/0 Q1-Q4 or Q2-Q3 Q1 -Q2 or Q3-Q4 I Annular Semiconductor MPQ2906/2907 MPQ2906N2907A MPQ2906/2907 MPQ2906N2907A Patented by Motorola 30 34 2.0 2.0 L Inc. 60 70 24 26 CASE 6'46-05 I > MOTOROW PUSTIC INC ,1982 PACKAGE I DS 4576 R3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Charatieristic Symbol Min Typ Mex Unit V(BR)CEO 40 -- -- Vdc OFF CHARACTERISTICS Collector-Emitter (Ic = Breakdown Voltage(l) 10 mAdc, IB = 0) Collector-Base Breakdown (IC = 10 @de, Emitter-Base Voltage Voltage IC = O) Collector Cutoff Current MPQ2906/2907 MPQ2906N2907A (VCB = 30 Vdc, IE = O) (VCB = 50 Vdc, IE = O) Emitter Cutoff Current (VC6 = 3.0 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain(l) (IC = 100 @de, VCE = 10 Vdc) (Ic = 1.0 mAdc, VCE = 10 Vdc) (Ic = 10 mAdc, VCE = 10 Vdc) (Ic = 150 mAdc, VCE = 10 Vdc) (Ic = 300 mAdc, VCE = 10 Vdc) (lc = 500 mAdc, VCE = 10 Vdc) Collector-Emitter (Ic Saturation Voltage(l) = 150 mAdc, IB = 15 mAdc) (Ic = 300 mAdc, IB = 30 mAdc) (1c = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltage(l) (1c = 150 mAdc, 16 = 15 mAdc) (1c = 300 mAdc, IB = 30 mAdc) (Ic = 500 mAdc, IB = 50 mAdc) DYNAMIC 60 V(BR)CBO 60 -- -- V(6R)E60 5.0 -- -- -- -- -- -- -- -- 0.4 1.6 1.6 -- -- -- -- -- -- 1.3 2.6 2.6 -- 30 -- -- -- 45 -- 100 -- -- -- 180 iE = O) Breakdown (IE = 10 @de, MPQ2906/2907 MPQ2906W2907A CHARACTERISTICS ~:\, MPQ2906W2907A MPQ2906N2907A MPQ2906/2906A MPQ2907/2907A MPQ2906/2906A MPQ2907/2907A MPQ2906/2906A MPQ2907/2907A MPQ2906/2906A MPQ2907/2907A Vdc .,.. ~.$, .. ,.$.. ,yy~$$~ ,,, ~:<~1 `~' ., !./,,,> ~?., `..,2,.5:* iCBO ~ .:,:;: "~ nAdc $.;'. $,-* -- -- s,- $ -- -- `:i~k p ,$;:~~' -- -- IE60 nAdc ,+ ,,! ..:$,,, .i;~,~,,;:ji .,./, >,~,..!:< *"`>.ii?i ` ..... \` +$,~::i!., ``" hFE . `A* -- 4on5 *,$::;;;* -- 40/1 00 `" :,.'" -- 3m. `" -- -- _ _ ,z5pW* _ ~~i: 120 ,#$ , .!<,ldo -- 300 ::,,,,,**' -- -- ., 20/40 .1$. .<.\,' -- ,);?/;.. *:' 30150 -- <- ... !.,!t,,~ -- -- 40140 ,:#~~~~'J,?. ... ~-.. +1>:, -- -- 50/50 t.~ ,*> +9$~~f~~(sat) MPQ2906/2907 ... >f~~ MPQ2906/2907 M PQ2906N29@~ "'.:>* ,*,,, .. ., JL?$> vBE(sat) MPQ29~Zx~y MPQ&*@? M~:Q:~~&2907A .. ".:.,..s,1,. ~~..:.~:t ,,,*?..;<.,' t ,., Vdc Vdc \..~7 Turn-On ti m~ `~~t~ (Vcc =;W'@~c, Ic = 150 mAdc, MPQ2906/2907 ton MPQ2906N2907A MPQ2906/2907 toff MPQ2906N2907A (1 )Pu&e Test: Pulse Wdth <300 ps, Duty Cycle = 2Y0. MOTOROLA @ Semiconductor Products Inc. ns ns EQUIVALENT RISE AND FALL TIMES FIGURE 1 -- DEWY AND RISE TIME TEST CIRCUIT - 30 :;:,:7 "I Input ZO=50Q PRF = 150 PPS Rise Time s 2.o ns l.Ok l.Ok To Oscilloscope Rise Tme s 5.o ns :U 37 v To Oscilloscope Rise Tme <5.0 ns IN916 42:: L P 50 This information has been carefully checked and is believed to be entiraly reliable. However, no responsibility is aesumed for inaccuracies. Motorola reserves the right to maka changas to any products herain to improve reliability, function or design. Motorola does not assume any liability arising out of the application or uae of any product or circuit described herein. No license ia conveyed under patent rights in any form. When this document contains information on a naw product, specifications herein are subject to change without notica. m MOTOROLA Semiconductor Products Inc. t 1. :,, ,. , . . ,., ., ... . i < . . . Printed in Switzerland