QUAD DUAL-IN-LINE
PNP SILICON ANNULAR
GENERAL-PURPOSE TRANSISTORS
...designed for general-purpose switching circuits and DC to
VHF amplifier applications.
oMaximum Power Dissipation @TA =25°C
PD =1.25 wattS —MPQ2906, MPQ2907
—MPQ2906A, MPQ2907A
●High Collector-Base Breakdown Voltage —
V(BR)CBO =60 Vdc (Min) @IC =10 pAdc
.DC Current Gain Specified —10 to 300 mAdc
eHigh Current-Gain —Bandwidth Product —
~ = 350 MHz (Typ) @IC =50 mAdc
eTransistors Similar to 2N2906,A and 2N2907,A ,.:4!
~,~.:
eCompact Size Compatible With ICAutomatic Insertion Equipmenj ‘~$~
<valu~>
.. .
Rating Symbol MPw9,ti>~ MP02906A, 71
Collector-Emitter Voltage VCEO ,.+q>$, ‘“ 60
.,, .,$..!:?..,.:.
Collector-Baae Voltage VCB ,~ljt?,,qt}“’+., 60
Emitter-Base Voltage VEB,,, ‘~: ~t~@]”” 5.0
Collector Current —Continuous @*+~\:”J” 600
.,..
Derate above 2YC $~”,J;* ‘
MP029@~~~z
MP.M&*z307A
Total Power Mssip%h;.@ TC =25°C PD
“s;&&g06/2907
,:S“,~Q2906N2907A
Derate&&&,&C
..,,.v~ MPQ2906/2907
.;{$,’ab?,.,,,,
...+* ‘MPQ2906N2907A
:::.:~,.. ::.,
Ope@~ and Storage Junction TJ, Tst9
Te#~erature Ranae
ti 1.0 3.0
0.825 2.4
S.o I24
6.7 19,2
-55 to +150
THERMAL CHARACTERISTICS IJunction to
Characteristic Case
Q1-Q4 or Q2-Q3 MPQ2906/2907 30
MPQ2906N2907A 34
Q1-Q2 or Q3-Q4 MPQ2906/2907 L2.0
MPQ2906N2907A 2.0
IAnnular Semiconductor Patented by Motorola Inc.
=
Unit
Vdc
Vdc
Vdc
mAdc
Wans
mW/°C
Wans
mWI°C
‘c
‘CM
193
250
100
134
“/0
60
70
24
26 I
CONNECTION DIAGRAM
cBEEBc
4n n8n
)
lU uuuu u J
cBEEBc
L
rl
R
-----
J-
MIL
NOTES:
1. LEAOS WITHIN 0.13 mm
(0.0051 RAOIUS OF TRUE
POSITION AT SEATING
PLANE AT MAXIMUM
MATERIAL CONOITION.
2. OIMENSION “~ TO
CENTER OF LEAOS
WHEN FORMEO
PARALLEL.
3. OIMENSION “B” OOES NOT
INCLUOE MOLO FLASH.
4. ROUNOEO CORNERS
OPTIONAL,
CASE 6’46-05
PUSTIC PACKAGE I
>MOTOROW INC ,1982 DS 4576 R3
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
Charatieristic Symbol Min Typ Mex Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) MPQ2906/2907
(Ic =10 mAdc, IB =0) V(BR)CEO 40 ——Vdc
MPQ2906W2907A 60
Collector-Base Breakdown Voltage
(IC =10 @de, iE =O) V(BR)CBO 60 ——Vdc.,..
~.$,
Emitter-Base Breakdown Voltage
.. ,.$..
(IE =10 @de, IC =O) V(6R)E60 5.0 — — ,yy~$$~
,,, ~:<~1‘~’
., !./,,,>
Collector Cutoff Current iCBO ~?., ‘..,2,.5:*
(VCB =30 Vdc, IE =O) MPQ2906/2907 —$.;’. $,-*
~.:,:;: “~ nAdc
(VCB =50 Vdc, IE =O)
—
MPQ2906N2907A s,-$
— — ‘:i~k p
Emitter Cutoff Current IE60 ——,$;:~~’ nAdc
(VC6 =3.0 Vdc, IE =0) ..:$,,,
,+
,,!
ON CHARACTERISTICS .i;~,~,,;:ji
.>,~,..!:<
*“ ‘
‘>.ii?i,./,
.....
DC Current Gain(l) \ ‘
hFE +$,~::i!., ‘‘“
(IC =100 @de, VCE =10 Vdc) .‘A*
MPQ2906W2907A 4on5 *,$::;;;*
(Ic =1.0 mAdc, VCE =10 Vdc)
—
MPQ2906N2907A 40/1 00 ‘“:,.’” —
(Ic =10 mAdc, VCE =10 Vdc)
—
MPQ2906/2906A 3m. ‘“ ——
MPQ2907/2907A
(Ic =150 mAdc, VCE =10 Vdc)
,z5pW* __
MPQ2906/2906A ~~i: _120
MPQ2907/2907A ,#$ ,.!<,ldo —300
(Ic =300 mAdc, VCE =10 Vdc) MPQ2906/2906A ::,,,,
.<.\,’
,**’
., 20/40 ——
.1$.
MPQ2907/2907A ,);?/;.. *:’ 30150 —
(lc =500 mAdc, VCE =10 Vdc) <- ... —
MPQ2906/2906A !.,!t,,~
,:#~~~~’J,?....40140 ——
MPQ2907/2907A ~-.. +1>:,
t.~ ,*> 50/50 ——
Collector-Emitter Saturation Voltage(l) +9$~~f~~(sat) Vdc
(Ic =150 mAdc, IB =15 mAdc) MPQ2906/2907 0.4
(Ic =300 mAdc, IB =30 mAdc) ... ——
MPQ2906/2907 >f~~ ——1.6
(1c =500 mAdc, IB =50 mAdc) MPQ2906N29@~ — — 1.6
Base-Emitter Saturation Voltage(l) ,*,,,
“’.:>* ..
., JL?$> vBE(sat) Vdc
(1c =150 mAdc, 16 =15 mAdc) MPQ29~Zx~y —1.3
(1c =300 mAdc, IB =30 mAdc)
—
MPQ&*@?
(Ic =500 mAdc, IB =50 mAdc)
——2.6
M~:Q:~~&2907A ——2.6
.. “.:.,..s,1,.
DYNAMIC CHARACTERISTICS ~~..:.~:t,,,*?..;<.,’t
,.,
~:\, \..~7
Turn-On ti m~ ‘~~t~ MPQ2906/2907 ton —30 —ns
(Vcc =;W’@~c, Ic =150 mAdc, MPQ2906N2907A ——45
MPQ2906/2907 toff —100 —ns
MPQ2906N2907A ——180
(1)Pu&e Test: Pulse Wdth <300 ps, Duty Cycle =2Y0.
@MOTOROLA Semiconductor Products Inc.
EQUIVALENT RISE AND FALL TIMES
Input
ZO=50Q
FIGURE 1—DEWY AND RISE
TIME TEST CIRCUIT
– 30
PRF =150 PPS
Rise Time s2.o ns
P
l.Ok
:U
42:: L50
To Oscilloscope
Rise Tme s5.o ns
:;:,:7
“I
l.Ok 37
v
To Oscilloscope
Rise Tme <5.0 ns
IN916
This information has been carefully checked and is believed to be entiraly reliable. However, no responsibility is aesumed for inaccuracies. Motorola reserves
the right to maka changas to any products herain to improve reliability, function or design. Motorola does not assume any liability arising out of the application
or uae of any product or circuit described herein. No license ia conveyed under patent rights in any form. When this document contains information on a naw
product, specifications herein are subject to change without notica.
m
MOTOROLA Semiconductor Products Inc.
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Printed in Switzerland
