KE C SEMICONDUCTOR KTA1267L KOREA ELECTRONICS CO.LTD. TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES * Excellent hr: Linearity B : hpe(O.1mA)/hye(2mA)=0.95(Typ.). - Low Noise : NF=0.2dB(Typ.), 3dB(Max.). * * Complementary to KTC3199L. | Il = | ffo | > | MiuuerTers 1 1 1 A 3.20 MAX 1, | bx B 4.30 MAX 1 i | > aaores MAXIMUM RATINGS (Ta=25T) OW i E 127 F 2.30 c H 1 H CHARACTERISTIC SYMBOL | RATING | UNIT a Cora J 1.05 Collector-Base Voltage Veo -50 Vv . = Collector-Emitter Voltage Vero -30 Vv 058 WA oO 0.75 Emitter-Base Voltage Vizo -5 Vv 1. EMITTER Collector Current Ic -150 mA 2. COLLECTOR 3. BASE Emitter Current Ir 150 mA Collector Power Dissipation Po AOO mW TO92M Junction Temperature T; 150 Cc Storage Temperature Range Tstg -5d ~ 150 Cc ELECTRICAL CHARACTERISTICS (Ta=25T) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current Ico Vep=-b0V, In=0 - - -0.1 LA Emitter Cut-off Current Teno Ven=-9oV, Ic=0 - - -0.1 LA DC Current Gain hie (Note) | Ven=-6V, Ic=-2mA 70 - 400 Collector-Emitter Vervaat) Ic=-100mA, Ip=-10mA - -0.1 -0.8 V Saturation Voltage Transition Frequency fr Vcr=-l0V, Ic=-lmA 80 - MHz Collector Output Capacitance Cop Vep=-10V, In-0, f=1MHz - 4.0 7.0 pF Vcr=-6V, Ic=-0.1mA, _ ~ . oo NFO | s100Hz, Re=10k@ 05 6.0 Noise Figure dB NF(2) Ver=-6V, Ic=-0.1mA - 02 30 f=IkHz, Rg=10k2 Note : hry: Classification 0:70 ~ 140, Y:120~ 240, GR:200 ~ 400 1997. 6. 24 Revision No : 1 KEC 1/2 KTA1267L Ic Vcr 4 1k ~ E i & 500 c Z 300 4 oO es & 100 oO iI a fe 50 g 5 30 = 5 Vcr=-1V 4 a 8 10 0 -1 -2 -3 -4 -5 -6 -7 -8 -0.1 -0.3 -1 -3 -10 -30 100 -300 COLLECTOR-EMITTER VOLTAGE Vce (V) COLLECTOR CURRENT Ic (mA) Vcx(sat) Ic | (0.5 a __'3[ COMMON EMITTER Ee -T Ic/Ip=10 zz fo ar 0.1 Ip - V Io B BE ea 2 o8 -0.03 -1k EE Ow 8-0.03 = -500 Bs 3 -300 + os -100 Om -0.01 -59 -0.1 -0.3 -1 -3 -10 -30-100 -300 B 30 COLLECTOR CURRENT Ic (mA) [o= @ -10 5 8 - = 2 -1 Z VpE(sat) Ic -0.5 ES -10 0.3 = COMMON EMITTER 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 = 5 Ic/Ip=10 aa 3 Ta=25C BASE-EMITTER VOLTAGE Vpg (V) a wy ~ =e 1 ES -0.5 Ee 0.3 iS Qa -0.1 a -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT Ic (mA) > fr Ig g ik 300 Ee 500 B 2g z, E- 400 3 oe 100 ee 300 50 es 200 z 30 COMMON EMITTER Eps EB VcE=10V f 100 a Ta=25C oa 4 10 A 0 0.14 03 #4 #38 10 30 100 300 0 50 100 150 200 EMITTER CURRENT Ig (mA) AMBIENT TEMPERATURE Ta ('C) 1997. 6. 24 Revision No : 1 KEC 2/2