2N6990
Silicon NPN Transisto
r
Data Sheet
Description
Complement to the 2N6988
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appen di x E
• JAN level (2N6990J)
• JANTX level (2N6990JX)
• JANTXV level (2N6990JV)
• JANS level (2N6990JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• Gene ral pu rp ose switching
• 4 Transistor Array
• NPN silicon transistor
Features
• Hermetically sealed 14 Lead Flat Pack
• Also available in chip configuration
• Chi p ge ometry 0400
• Reference document :
MIL-PRF-19500/559
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 50 Volts
Collector-Base Voltage VCBO 75 Volts
Emitter-Base Voltage VEBO 6 Volts
Collector Current, Continuous IC800 mA
Power Dissipation, TA = 25OC
Derate linearly above 25OC PT1.0
5.71 W
mW/°C
Operating Junction Temperature TJ-65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright© 2003 Semicoa
Rev. D.2 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N6990
Silicon NPN Transisto
r
Data Sheet
Copyright© 2003 Semicoa
Rev. D.2 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 50 Volts
Collector-Base Cutoff Current ICBO1
ICBO2
VCB = 75 Volts
VCB = 60 Volts
10
10 µA
nA
Collector-Base Cutoff Current ICBO3 VCB = 60 Volts, TA = 150°C 10
µA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 6 Volts
VEB = 4 Volts
10
50 µA
nA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
TA = -55°C
50
75
100
100
30
35
325
300
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA 0.6
1.2
2.0 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.3
1.0 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 20 Volts, IC = 20 mA,
f = 100 MHz 2.5 10
Small Signal Short Circuit Forward
Current Transfer Ratio hFE VCE = 10 Volts, IC = 1 mA,
f = 1 kHz 50
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 8
pF
Open Circuit Inpu t Capacitance CIBO VEB = 2 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 25
pF
Transistor to Transistor Resistance |RT-T| |VT-T| = 500 Volts 1010
Ω
Switching Characteristics
Saturated Turn-On Time tON 35
ns
Saturated Turn-Off Time tOFF 300
ns
