DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT3904 NPN switching transistor Product specification Supersedes data of 1997 Jul 04 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistor PZT3904 FEATURES PINNING * Low current (max. 200 mA) PIN * Low voltage (max. 40 V). DESCRIPTION 1 base 2, 4 APPLICATIONS collector 3 emitter * High-speed saturated switching. 4 handbook, halfpage DESCRIPTION 2, 4 NPN switching transistor in a SOT223 plastic package. PNP complement: PZT3906. 1 3 1 2 3 Top view MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 6 V IC collector current (DC) - 200 mA ICM peak collector current - 300 mA IBM peak base current - 100 mA Ptot total power dissipation - 1.05 W Tstg storage temperature Tamb 25 C; note 1 -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook". 1999 Apr 14 2 Philips Semiconductors Product specification NPN switching transistor PZT3904 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point VALUE note 1 UNIT 117 K/W 36 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see "Thermal considerations for SOT223 in the General Part of associated Handbook". CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 30 V - 50 nA IEBO emitter cut-off current IC = 0; VEB = 6 V - 50 nA hFE DC current gain VCE = 1 V; (see Fig.2) VCEsat VBEsat saturation voltage saturation voltage IC = 0.1 mA 60 - IC = 1 mA 80 - IC = 10 mA 100 300 IC = 50 mA 60 - IC = 100 mA 30 - IC = 10 mA; IB = 1 mA - 200 mV IC = 50 mA; IB = 5 mA - 200 mV IC = 10 mA; IB = 1 mA - 850 mV IC = 50 mA; IB = 5 mA - 950 mV - 4 pF Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz Ce emitter capacitance IC = ic = 0; VEB = 500 mV; f = 1 MHz - 8 pF fT transition frequency IC = 10 mA; VCE = 20 V; f = 100 MHz 300 - MHz F noise figure IC = 100 A; VCE = 5 V; RS = 1 k; f = 10 Hz to 15.7 kHz - 5 dB - 65 ns Switching times (between 10% and 90% levels); (see Fig.3) ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA ton turn-on time td delay time - 35 ns tr rise time - 35 ns toff turn-off time - 240 ns ts storage time - 200 ns tf fall time - 50 ns 1999 Apr 14 3 Philips Semiconductors Product specification NPN switching transistor PZT3904 MGD834 160 handbook, full pagewidth hFE 120 80 40 0 10-2 10-1 1 102 10 VCE = 1 V. Fig.2 DC current gain; typical values. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 (probe) 450 R2 Vi DUT R1 MLB826 Vi = 5 V; T = 500 s; tp = 10 s; tr = tf 3 ns. R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 . VBB = -1.9 V; VCC = 3 V. Oscilloscope input impedance Zi = 50 . Fig.3 Test circuit for switching times. 1999 Apr 14 4 oscilloscope IC (mA) 103 Philips Semiconductors Product specification NPN switching transistor PZT3904 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 1999 Apr 14 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification NPN switching transistor PZT3904 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 14 6 Philips Semiconductors Product specification NPN switching transistor PZT3904 NOTES 1999 Apr 14 7 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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