de nee ~ MOTOROLA SC {XSTRS/R Ft qu Deffeae7esy oosocoa y oe een - ee or rae nes en 6367254 MOTOROLA SC CXSTRS/R F) geo 80601. DS | 6367254 MOTOROLA OX! | Cot Re | BD506 = SEMICONDUCTOR BD508 = Ee TECHNICAL DATA BD510 PNP SILICON AUDIO TRANSISTORS 20 - 30 - 40 VOLTS PNP SILICON ANNULAR TRANSISTORS 10 WATTS ,.. designed for complementary symmetry audio circuits e Excellent Current Gain Linearity 1.0 mAdc to 1.0 Adc @ Low Collector-Emitter Saturation Voltage VCE (sat) = 0.7 Vde (Max) @ ic= 1.0 Adc @ Complements to NPN BD505, BD507, BD509 e Uniwatt Package for Excellent Thermal Properties 1.0 Watt @ Ta = 25C 10.0 Watts @ Tc = 25C S E J (2) (1) Standard package:B 0506, 608, 510 (2) Tab formed for fiat mounting BDS06-1, 508-1, 510-1 Also avaitable with leads formed to TO-5 con- figuration: BOS06-5, 508-5, 510-5 ot MAXIMUM RATINGS t 5 ! Rating Symbol |BD506/8D508/BD510} Unit ~ 1 0TVP -it Collector-Emitter Voltage VcEo 20 30 40 Vdq | | 1 {14 Collector Base Voltage Vee 30] 40 | 50 | vac B= Emiutter-Base Voltage Ves 50 Vdc Y wa we Collectar Current Continuous fe 20 Adc 24 Total Device Dissipation @ Ta = 25C Po 1.0 Watt oT + + SU oa Derate above 25C 8.0 mc 8 Totat Device Dissipation @ Tc = 25C Po 10 Watts t 3 tye Derate above 25C 80 mwiec L J\ 3 4 Operating and Storage Junction Ty.Ts1g ~55 to #150 Cc 4 cc sweep Temperature Range | t 2a % 127 THERMAL CHARACTERISTICS e | Charactaristic Symbol Max Unit i_4 -_ ec Thermal Resistance, Junction to Case fc 125 ocw 43 | rh + 34 . Thermal Resistance, Junction to Ambient aA 125 oc rT 4h ' All dimensions in millimeters Collector connected to tab CASE 152 3-335 MOTOROLA SC {XSTRS/R FI at ELECTRICAL CHARACTER: STICS (Tc = 25C unless otherwise noted) BD506, BD508, BD510 6367254 MOTOROLA SC xs Characteristic OFF CHARACTERISTICS TRS/R F) 4b Depfesb7254 oosonoe b &f 96D 80602 D_. 7-33-/7 Max { Unit | Symbol | Min | Typ | (Ig = 1.0 mAdc, Ig = 0) Collector-Emitter Breakdown Voltage BD506 BD508 BD510 BVecEO 2 - - Vde 40 _ (lg = 100 pAdc, Io =0) Emitter-Base Breakdown Voltage BVEBO 5.0 = Vde Collector Cutoff Current (Veg = 20, 30. 40 Vde, Ip = 0 ) BOS06 BDS08 BD510 - 100 nAdc cao _- ON CHARACTERISTICS DC Current Gain (1) (Ig =1 0 Adc, VcE = 2.0 Vdc) (Ic = 250 mAdc, Vee = 2.0 Vdc) bee 60 138 - (Ig = 1.0 Ade, Ip = 0.1 Ade) Collector-Emitter Saturation Voltage(1) VcE(sat) Vde _ 0.40 07 Base-Emitter On Voltage (1) (ig = 1.0 Adc, Veg = 1.0 Vdc) VBE{on) - 092 1.2 Vde SMALL-SIGNAL_ CHARACTERISTICS Current-Gain-- Bandwidth Product (ig = 50 mAdc, Vg = 5.0 Vde, f = 100 MHz) 50 180 _ MHz Output Capacitance (Veg = 10 Vde, ip = 0, f= 100 kHz) 30 (1) Pulse Test Pulse Width < 300 ys. Duty Cycle < 20% FIGURE 1OC CURRENT GAIN 500 Yop 20 ck 300 1) -28 200 bre, OC CURRENT GAIN 1 20 50 20 oe = 2 Ty 1906 Secondacy Bonding Wire Limited Thermal Limitations @ Te = 25C Apphesble To wo o ny Ic, COLLECTOR CURRENT {AMP} at 20 30 50 100 10 200 Ic. COLLECTOR CURRENT {mA} FIGURE 2--"ON VOLTAGES V, VOLTAGE (VOLTS) @leflg = 10 1000 w 200 (30 50 100 200 300 00 1000 Ic. COLLECTOR CURRENT (mA) FIGURE 3 DC SAFE OPERATING AREA Limited 80 506 aD 508 80519 20 30 Vce, COLLECTOR EMITTER VOLTAGE {VOLTS} There are two limitations on the power handling ability of a transistor: junction temperature and secondary breakdown. Safe operating area curves indicate | Vce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on TJ (pk) = 150C; Tc is variable depending on conditions At high case temperatures, thermal limitations will reduce the power that can be handied to values less than the limitatians imposed by secondary breakdown 40 3-336 oo Seer me tA oe Hee ag pete