SS1003EJ
No.8157-1/3
Applications
•High frequency rectification (switching regulators, converters, choppers).
Features
•Low switching noise.
•Low forward voltage (IF=500mA, VF max=0.39V) (IF=1A, VF max=0.45V).
•Ultraminiature (1608 size) and thin (0.6mm) leadless package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V
Average Output Current IO1A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 5 A
Junction Temperature Tj --55 to +125 °C
Storage Temperature Tstg --55 to +125 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Voltage VRIR=500µA30V
Forward Voltage VF1I
F
=500mA 0.39 V
VF2I
F
=1A 0.45 V
Reverse Current IRVR=15V 360 µA
Interterminal Capacitance C VR=10V, f=1MHz 27 pF
Reverse Recovery Time trr IF=IR=10mA, See specified Test Circuit. 10 ns
Thermal Resistance Rth(j-a)
Mounted on a ceramic board (600mm
2
✕0.8mm)
165 °C / W
Marking : DH
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8157A
O1806 SY IM TC-00000252 / N3004 TS IM TB-00000946
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
SS1003EJ Schottky Barrier Diode
30V, 1A Rectifier
SS1003EJ
No.8157-2/3
00.1
IT07939
IF -- VF
Forward Current, IF -- A
Forward Voltage, VF -- V
100 40
IT07940
IR -- VR
Reverse Current, IR -- µA
Reverse Voltage, VR -- V
0.001
2
3
5
7
0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
5
7
10
0.2 0.3 0.4 0.5 1.0
2
3
5
7
3
2
10
2
3
5
7
100
2
3
5
7
1000
2
3
5
7
10000
20 30
Ta=125
°
C
100
°
C
75
°
C
50
°
C
25
°
C
--25
°
C
Ta=1
25°
C
1
00°
C
75
°
C
50
°
C
25
°
C
--25
°
C
Package Dimensions
unit : mm (typ)
7033A-001
Type No. Indication (Top view) Electrical Connection (Top view) trr Test Circuit
1 : Cathode
2 : Cathode
3 : Anode
4 : Anode
SANYO : ECSP1608-4
0.6
0.025
0.5 0.2
1.2
0.3
Bottom View
Top View
12
12
43
43
1.6
0.8
Polarity Discriminating Mark
Duty≤10%
50Ω100Ω10Ω
--5V trr
10µs
10mA10mA
1mA
DH
Cathode mark (Top)
Cathode mark (Top)
*Electrodes : on the bottom
Anode
Anode
Cathode
Cathode
SS1003EJ
No.8157-3/3
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
PS
IT08214
0
00.4
0.4
0.3
0.2
0.6
0.5
0.1
0.8 1.20.2 0.6 1.0
(1) (2) (4) (3)
IT08215
20
00.40 0.8 1.20.2 0.6 1.0
40
60
80
100
120
140
(1) (2) (4) (3)
180°
360°
θ
360°
PF(AV) -- IO
Average Output Current, IO -- A
Average Forward Power Dissipation, PF(AV) -- W
Rectangular
wave
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Sine wave
(1) (2) (4) (3)
Average Output Current, IO -- A
Tc -- IO
Case Temperature, Tc -- °C
1.00.1
10
2
2
3
3
5
7
100
723 5 10
723 5 100
723 5
Reverse Voltage, VR -- V
C -- VR
Interterminal Capacitance, C -- pF
IT07943
f=1MHz
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
This catalog provides information as of October, 2006. Specifications and information herein are subject
to change without notice.
