ee Discrete POWER & Signal FAIRCrIIL2 Technologies eee mpas amas sem unaae SEMICONDUCTOR i 2N3703 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absol ute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 30 Vv Vcso Collector- Base Voltage 50 Vv VeBo Emitter-Base Voltage 5.0 Vv Io Collector Current - Continuous 500 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N3703 Pp Total Device Dissipation 625 mW Derate above 25C 5.0 mw/C Rac Thermal Resistance, Junction to Case 83.3 C/W Roa Thermal Resistance, Junction to Ambient 200 C/W COLENZS 1997 Fairchild Semiconductor Corporation Electrical Characteristics PNP General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vieryceo Collector-Emitter Breakdown Voltage | Ic = 10 mA, Ip= 0 30 Vv VipR)cBo Collector-Base Breakdown Voltage lo = 100 pA, IE = 0 50 Vv VipRjeso Emitter-Base Breakdown Voltage le = 100 pA, Ic = 0 5.0 Vv loso Collector Cutoff Current Vos = 20 V, le=0 100 nA leBo Emitter Cutoff Current Vep=3.0V, Ilo =0 100 nA ON CHARACTERISTICS* Hee DC Current Gain Voe= 5.0 V,Ilo= 50 mA 30 150 Veesaty Collector-Emitter Saturation Voltage lo = 50 mA, Ip = 5.0 mA 0.25 Vv Vee(on) Base-Emitter On Voltage Voe= 5.0 V, lo = 50 mA 0.6 1.0 Vv SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance Vop = 10 V, f= 1.0 MHz 12 pF fr Current Gain - Bandwidth Product Io = 50 mA, Voz = 5.0 V, 100 MHz f = 20 MHz *Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0% COLENZS