TDSG / O / Y31.. VISHAY Vishay Semiconductors Standard 7- Segment Display 10 mm Description The TDS.31.. series are 10 mm character seven segment LED displays in a very compact package. The displays are designed for a viewing distance up to 6 meters and available in four bright colors. The grey package surface and the evenly lighted untinted segments provide an optimum on-off contrast. All displays are categorized in luminous intensity groups. That allows users to assemble displays with uniform appearence. Typical applications include instruments, panel meters, point-of-sale terminals and household equipment. 19236 e4 Pb Pb-free Features Applications * * * * * * * * Panel meters Test- and measure- equipment Point-of-sale terminals Control units Evenly lighted segments Grey package surface Untinted segments Luminous intensity categorized Yellow and green categorized for color Wide viewing angle Suitable for DC and high peak current Lead-free device Parts Table Part Color, Luminous Intensity Circuitry TDSO3150 Orange red Common anode TDSO3160 Orange red Common cathode TDSY3150 Yellow Common anode TDSY3160 Yellow Common cathode TDSG3150 Green Common anode TDSG3160 Green Common cathode Document Number 83125 Rev. 1.4, 31-Aug-04 www.vishay.com 1 TDSG / O / Y31.. VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified TDSO3150/3160 , TDSY3150 /TDSY3150, TSDG1150/1160 Parameter Test condition Part Symbol Value Unit VR 6 V TDSO3150 IF 20 mA TDSO3160 IF 20 mA TDSY3150 IF 20 mA TDSY3160 IF 20 mA TDSG3150 IF 20 mA Reverse voltage per segment or DP DC forward current per segment or DP Surge forward current per segment or DP Power dissipation tp 10 s (non repetitive) TDSG3160 IF 20 mA TDSO3150 IFSM 0.15 A TDSO3160 IFSM 0.15 A TDSY3150 IFSM 0.15 A TDSY3160 IFSM 0.15 A TDSG3150 IFSM 0.15 A TDSG3160 IFSM 0.15 A PV 480 mW Tamb 45C Tj 100 C Operating temperature range Tamb - 40 to + 85 C Storage temperature range Tstg - 40 to + 85 C Tsd 260 C RthJA 120 K/W Junction temperature Soldering temperature t 3 sec, 2mm below seating plane Thermal resistance LED junction/ambient Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified Orange red TDSO3150/3160 Parameter Test condition Luminous intensity per segment IF = 10 mA Symbol Min IV 450 612 Typ. Max Unit cd (digit average) 1) Dominant wavelength IF = 10 mA d Peak wavelength IF = 10 mA p 630 nm Angle of half intensity IF = 10 mA 50 deg Forward voltage per segment or DP IF = 20 mA VF 2 Reverse voltage per segment or DP IR = 10 A VR 1) 15 3 nm V V IVmin and IV groups are mean www.vishay.com 2 6 625 Document Number 83125 Rev. 1.4, 31-Aug-04 TDSG / O / Y31.. VISHAY Vishay Semiconductors Yellow TDSY3150/3160 Symbol Min Luminous intensity per segment IF = 10 mA (digit average) 1) Parameter Test condition IV 450 Typ. Dominant wavelength IF = 10 mA d 581 Peak wavelength IF = 10 mA p 585 Unit cd 594 Angle of half intensity IF = 10 mA 50 Forward voltage per segment or DP IF = 20 mA VF 2.4 Reverse voltage per segment or DP IR = 10 A VR 1) Max 6 15 Typ. nm nm deg 3 V V IVmin and IV groups are mean Green TDSG3150/3160 Symbol Min Luminous intensity per segment IF = 10 mA (digit average) 1) Parameter IV 450 Dominant wavelength IF = 10 mA d 562 Peak wavelength IF = 10 mA p 565 nm Angle of half intensity IF = 10 mA 50 deg Forward voltage per segment or DP IF = 20 mA VF 2.4 Reverse voltage per segment or DP IR = 10 A VR 1) Test condition Max Unit cd 575 6 nm 3 V 15 V IVmin and IV groups are mean Typical Characteristics (Tamb = 25 C unless otherwise specified) 0 I V rel - Relative Luminous Intensity PV - Power Dissipation ( mW ) 500 400 300 200 100 0 95 11479 0 20 40 60 80 Figure 1. Power Dissipation vs. Ambient Temperature Document Number 83125 Rev. 1.4, 31-Aug-04 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.6 100 Tamb - Ambient Temperature ( C ) 10 0.4 0.2 0 0.2 0.4 0.6 95 10082 Figure 2. Rel. Luminous Intensity vs. Angular Displacement www.vishay.com 3 TDSG / O / Y31.. VISHAY Vishay Semiconductors I v rel - Relative Luminous Intensity I F - Forward Current ( mA ) 1000 Red 100 10 1 t p /T = 0.001 t p = 10 s 0.1 Red 1 0.1 0.01 0 2 4 6 8 1 10 V F - Forward Voltage ( V ) 95 10086 I F - Forward Current ( mA ) I v rel - Relative Luminous Intensity 1.2 Red 1.2 0.8 0.4 I F = 10 mA Red 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 0 590 100 T amb - Ambient Temperature ( C ) 95 10087 630 650 670 690 - Wavelength ( nm ) Figure 7. Relative Intensity vs. Wavelength 2.4 1000 Red I F - Forward Current ( mA ) I v rel - Relative Luminous Intensity 610 95 10090 Figure 4. Rel. Luminous Intensity vs. Ambient Temperature 2.0 1.6 1.2 0.8 0.4 Yellow 100 t p /T = 0.001 t p = 10 s 10 1 I FAV = 10 mA, const. 0 0.1 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Figure 5. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle www.vishay.com 4 100 Figure 6. Relative Luminous Intensity vs. Forward Current 1.6 95 10088 10 95 10089 Figure 3. Forward Current vs. Forward Voltage I v rel - Relative Luminous Intensity 10 0 95 10030 2 4 6 8 10 V F - Forward Voltage ( V ) Figure 8. Forward Current vs. Forward Voltage Document Number 83125 Rev. 1.4, 31-Aug-04 TDSG / O / Y31.. VISHAY 1.6 1.2 Yellow IVrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity Vishay Semiconductors 1.2 0.8 0.4 0 I F = 10 mA 0 20 40 60 80 0.8 0.6 0.4 0.2 0 550 100 Tamb - Ambient Temperature ( C ) 95 10031 Yellow 1.0 I F - Forward Current ( mA ) I v rel - Relative Luminous Intensity 650 1.6 1.2 0.8 0.4 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 tp /T Green 100 t p /T = 0.001 t p = 10 s 10 1 0.1 0 Yellow 1 0.1 1.6 10 Figure 11. Relative Luminous Intensity vs. Forward Current Document Number 83125 Rev. 1.4, 31-Aug-04 8 10 Green 0.8 0.4 100 I F - Forward Current ( mA ) 6 1.2 0 0.01 1 4 Figure 13. Forward Current vs. Forward Voltage I v rel - Relative Luminous Intensity 10 2 V F - Forward Voltage ( V ) 95 10034 Figure 10. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle I v rel - Relative Luminous Intensity 630 1000 Yellow 2.0 95 10033 610 Figure 12. Relative Intensity vs. Wavelength 2.4 95 10260 590 - Wavelength ( nm ) 95 10039 Figure 9. Rel. Luminous Intensity vs. Ambient Temperature 0 570 95 10035 I F = 10 mA 0 20 40 60 80 100 T amb - Ambient Temperature ( C ) Figure 14. Rel. Luminous Intensity vs. Ambient Temperature www.vishay.com 5 TDSG / O / Y31.. VISHAY Vishay Semiconductors I v rel - Specific Luminous Intensity 2.4 Green 2.0 1 1.6 2 1.2 10 a f b 9 g 3 0.8 4 8 c e d DP 7 0.4 5 0 95 10263 10 1 20 0.5 50 0.2 100 0.1 500 IF(mA) 0.02 tp/T 200 0.05 1 2 3 4 5 6 7 8 9 10 g f A(C) e d DP c A(C) b a 6 96 11678 I v rel - Relative Luminous Intensity Figure 15. Specific Luminous Intensity vs. Forward Current 10 Green 1 0.1 1 10 100 I F - Forward Current ( mA ) 95 10037 Figure 16. Relative Luminous Intensity vs. Forward Current IVrel - Relative Luminous Intensity 1.2 Green 1.0 0.8 0.6 0.4 0.2 0 520 540 560 580 600 620 - Wavelength ( nm ) 95 10038 Figure 17. Relative Intensity vs. Wavelength www.vishay.com 6 Document Number 83125 Rev. 1.4, 31-Aug-04 VISHAY TDSG / O / Y31.. Vishay Semiconductors Package Dimensions in mm 95 11343 Document Number 83125 Rev. 1.4, 31-Aug-04 www.vishay.com 7 TDSG / O / Y31.. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83125 Rev. 1.4, 31-Aug-04