VISHAY
TDSG / O / Y31..
Document Number 83125
Rev. 1.4, 31-Aug-04
Vishay Semiconductors
www.vishay.com
1
19236
Pb
Pb-free
e4
Standard 7- Segment Display 10 mm
Description
The TDS.31.. series are 10 mm character seven seg-
ment LED displays in a very compact package.
The displays are designed for a viewing distance up
to 6 meters and available in four bright colors. The
grey package surface and the evenly lighted untinted
segments provide an optimum on-off contrast.
All displays are categorized in luminous intensity
groups. That allows users to assemble displays with
uniform appearence. Typical applications include
instruments, panel meters, point-of-sale terminals
and household equipment.
Features
• Evenly lighted segments
• Grey package surface
• Untinted segments
• Luminous intensity categorized
• Yellow and green categorized for color
• Wide viewing angle
• Suitable for DC and high peak current
• Lead-free device
Applications
Panel meters
Test- and measure- equipment
Point-of-sale terminals
Control units
Parts Table
Part Color, Luminous Intensity Circuitry
TDSO3150 Orange red Common anode
TDSO3160 Orange red Common cathode
TDSY3150 Yellow Common anode
TDSY3160 Yellow Common cathode
TDSG3150 Green Common anode
TDSG3160 Green Common cathode
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2
Document Number 83125
Rev. 1.4, 31-Aug-04
VISHAY
TDSG / O / Y31..
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TDSO3150/3160 , TDSY3150 /TDSY3150, TSDG1150/1160
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Orange red
TDSO3150/3160
1) IVmin and IV groups are mean
Parameter Test condition Part Symbol Value Unit
Reverse voltage per segment
or DP
VR6V
DC forward current per segment
or DP
TDSO3150 IF20 mA
TDSO3160 IF20 mA
TDSY3150 IF20 mA
TDSY3160 IF20 mA
TDSG3150 IF20 mA
TDSG3160 IF20 mA
Surge forward current per
segment or DP
tp ≤ 10 µs (non repetitive) TDSO3150 IFSM 0.15 A
TDSO3160 IFSM 0.15 A
TDSY3150 IFSM 0.15 A
TDSY3160 IFSM 0.15 A
TDSG3150 IFSM 0.15 A
TDSG3160 IFSM 0.15 A
Power dissipation Tamb ≤ 45°C PV480 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 85 °C
Soldering temperature t ≤ 3 sec, 2mm below seating
plane
Tsd 260 °C
Thermal resistance LED
junction/ambient
RthJA 120 K/W
Parameter Test condition Symbol Min Ty p. Max Unit
Luminous intensity per segment
(digit average) 1)
IF = 10 mA IV450 µcd
Dominant wavelength IF = 10 mA λd612 625 nm
Peak wavelength IF = 10 mA λp630 nm
Angle of half intensity IF = 10 mA ϕ±50 deg
Forward voltage per segment
or DP
IF = 20 mA VF23V
Reverse voltage per segment
or DP
IR = 10 µAV
R615 V
VISHAY
TDSG / O / Y31..
Document Number 83125
Rev. 1.4, 31-Aug-04
Vishay Semiconductors
www.vishay.com
3
Yellow
TDSY3150/3160
1) IVmin and IV groups are mean
Green
TDSG3150/3160
1) IVmin and IV groups are mean
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Typ. Max Unit
Luminous intensity per segment
(digit average) 1)
IF = 10 mA IV450 µcd
Dominant wavelength IF = 10 mA λd581 594 nm
Peak wavelength IF = 10 mA λp585 nm
Angle of half intensity IF = 10 mA ϕ±50 deg
Forward voltage per segment
or DP
IF = 20 mA VF2.4 3 V
Reverse voltage per segment
or DP
IR = 10 µAV
R615 V
Parameter Test condition Symbol Min Typ. Max Unit
Luminous intensity per segment
(digit average) 1)
IF = 10 mA IV450 µcd
Dominant wavelength IF = 10 mA λd562 575 nm
Peak wavelength IF = 10 mA λp565 nm
Angle of half intensity IF = 10 mA ϕ±50 deg
Forward voltage per segment
or DP
IF = 20 mA VF2.4 3 V
Reverse voltage per segment
or DP
IR = 10 µAV
R615 V
Figure 1. Power Dissipation vs. Ambient Temperature
0
100
200
300
400
500
P - Power Dissipation ( mW )
V
T
amb
- Ambient Temperature (°C)
1000 20406080
95 11479
Figure 2. Rel. Luminous Intensity vs. Angular Displacement
0.4 0.2 0 0.2 0.4 0.6
95 10082
0.6
0.9
0.8
0°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
I - Relative Luminous Intensity
V rel
°
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Document Number 83125
Rev. 1.4, 31-Aug-04
VISHAY
TDSG / O / Y31..
Vishay Semiconductors
Figure 3. Forward Current vs. Forward Voltage
Figure 4. Rel. Luminous Intensity vs. Ambient Temperature
Figure 5. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
0.1
1
10
100
1000
95 10086
V
F
- Forward Voltage(V)
I - Forward Current ( mA )
F
tp/T = 0.001
tp=10µs
Red
1086420
0
0.4
0.8
1.2
1.6
95 10087
I - Relative Luminous Intensity
v rel
Red
IF=10mA
Tamb - Ambient Temperature ( °C)
20 40 60 800 100
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10088
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I - Relative Luminous Intensity
v rel
2.0
Red
IFAV = 10 mA, const.
Figure 6. Relative Luminous Intensity vs. Forward Current
Figure 7. Relative Intensity vs. Wavelength
Figure 8. Forward Current vs. Forward Voltage
I
F
- Forward Current ( mA )
100
Red
0.01
0.1
1
10
95 10089
I - Relative Luminous Intensity
v rel
101
590 610 630 650 670 690
λ- Wavelength ( nm )
Red
0
0.2
0.4
0.6
0.8
1.2
95 10090
I - Relative Luminous Intensity
v rel
1.0
0.1
1
10
100
1000
1086420
95 10030
VF- Forward Voltage(V)
I - Forward Current ( mA )
F
Yellow
tp/T = 0.001
tp=10µs
VISHAY
TDSG / O / Y31..
Document Number 83125
Rev. 1.4, 31-Aug-04
Vishay Semiconductors
www.vishay.com
5
Figure 9. Rel. Luminous Intensity vs. Ambient Temperature
Figure 10. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 11. Relative Luminous Intensity vs. Forward Current
0
0
0.4
0.8
1.2
1.6
95 10031
20 40 60 80 100
I - Relative Luminous Intensity
v rel
Tamb - Ambient Temperature ( °C)
Yellow
IF=10mA
Yellow
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10260
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I - Relative Luminous Intensity
v rel
2.0
Yellow
IF- Forward Current ( mA )
100
0.1
1
10
95 10033
I - Relative Luminous Intensity
v rel
101
0.01
Figure 12. Relative Intensity vs. Wavelength
Figure 13. Forward Current vs. Forward Voltage
Figure 14. Rel. Luminous Intensity vs. Ambient Temperature
550 570 590 610 630
0
0.2
0.4
0.6
0.8
1.2
650
95 10039
λ-- Wavelength ( nm )
1.0
Yellow
I - Relative Luminous Intensity
Vrel
0.1
1
10
100
1000
1086420
95 10034
VF- Forward Voltage(V)
I - Forward Current ( mA )
F
Green
tp/T = 0.001
tp=10µs
0
0.4
0.8
1.2
1.6
95 10035
I - Relative Luminous Intensity
v rel
Green
IF=10mA
Tamb - Ambient Temperature ( °C)
20 40 60 800 100
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Document Number 83125
Rev. 1.4, 31-Aug-04
VISHAY
TDSG / O / Y31..
Vishay Semiconductors
Figure 15. Specific Luminous Intensity vs. Forward Current
Figure 16. Relative Luminous Intensity vs. Forward Current
Figure 17. Relative Intensity vs. Wavelength
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10263
500
v rel
2.0
Green
I - Specific Luminous Intensity
IF(mA)
0.5 0.2 0.1 0.05 0.021 tp/T
IF- Forward Current ( mA )
100
Green
0.1
1
10
95 10037
I - Relative Luminous Intensity
v rel
101
520 540 560 580 600
0
0.2
0.4
0.6
0.8
1.2
620
95 10038
λ-- Wavelength ( nm )
1.0
Green
I - Relative Luminous Intensity
Vrel
a
f
e
g
d
c
b
DP
1
2
3
4
5
10
9
8
7
6
96 11678
1g
2f
4e
6DP
9b
10 a
7c
5d
3 A(C)
8 A(C)
VISHAY
TDSG / O / Y31..
Document Number 83125
Rev. 1.4, 31-Aug-04
Vishay Semiconductors
www.vishay.com
7
Package Dimensions in mm
95 11343
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8
Document Number 83125
Rev. 1.4, 31-Aug-04
VISHAY
TDSG / O / Y31..
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
