OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.1 7/09
Page 1 of 3
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Slotted Optical Switch
OPB847, OPB848
Features:
• Non-contact switching
• Apertured for high resolution
• Hermetically sealed components
Description:
The OPB847 and OPB848 consists of a gallium aluminum arsenide LED and a silicon phototransistor, which is
soldered into a printed PCBoard and mounted in a high-temperature plastic housing on opposite sides of a 0.100
inch (2.540 mm) wide slot. Both device types have a .025 (0.635mm) inch by .060 inch (1.524 mm) aperture in
front of the phototransistor for high resolution positioning sensing. Phototransistor switching takes place when an
opaque object passes through the slot.
Product Photo Here
Applications:
• Non-contact interruptive object sensing
• Assembly line automation
• Machine automation
• Equipment security
• Machine safety
RoHS
Part Number LED Peak
Wavelength
Sensor Slot Width /
Depth Apert ure
Emitter/Sensor Lead Length /
Spacing
OPB847
890 nm Transistor 0.100" / 0.250” 0.025" / 0.025"
OPB848 0.425" / 0.300"
Pin # Description
1 Anode
2 Cathode
3 Emitter
4 Collector
1
2
4
3
DIMENSIONS ARE IN:
INCHES
[ MILLIMETERS]
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.1 7/09
Page 2 of 3
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Slotted Optical Switch
OPB847, OPB848
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Operating and Storage Temperature Range -40° C to +85° C
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron] 240° C
Input Diode
Forward DC Current 50 mA
Reverse Voltage 2.0 V
Power Dissipation(2) 100 mW
Output Phototransistor
Collector-Emitter Voltage 30 V
Emitter-Collector Voltage 7 V
Power Dissipation(2) 100 mW
Notes:
(1) Duration can be extended to 10 seconds maximum when flow soldering.
(2) Derate linearly 1.00 mW/° C above 25° C.
(3) Methanol and isopropanol are recommended as cleaning agents.
(4) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can
cause change in measurement results.
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
VF Forward Voltage(4)
1.00 1.35 1.70 IF = 20 mA
1.20 1.55 1.90 IF = 20 mA, TA = -55° C
1.80 1.20 1.60 IF = 20 mA, TA = 100° C
IR Reverse Current - 0.10 100 µA VR = 2 V
Output Phototransistor
V(BR)CEO Collector-Emitter Breakdown Voltage 30 110 - V IC = 100 µA, IF = 0
V(BR)ECO Emitter-Collector Breakdown Voltage 5 10 - V IE = 100 µA, IF = 0
ICEO Collector-Emitter Dark Current - 0.20 100 nA VCE = 10 V, IF = 0
- 10 100 µA VCE = 10 V, IF = 0, TA = 100° C
V
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.1 7/09
Page 3 of 3
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Slotted Optical Switch
OPB847, OPB848
OPB84 7 - Flag N ex t to Em itter
0.00
0.20
0.40
0.60
0.80
1.00
1.20
0.00 0.05 0.10 0.15 0.20 0.25
Displacement Distance (inches)
Typical I
C(ON)
Response (m A)
Right to Left
Left to Right
Top to Bottom
OPB847 - Flag Next to Sensor
0.00
0.20
0.40
0.60
0.80
1.00
1.20
0.00 0.05 0.10 0.15 0.20 0.25
Displacement Distance (inches)
Typical I
C(ON)
Response (mA)
Right to Left
Left to Right
Top to Bottom
OPB847 - Flag in Middle of Slot
0.00
0.20
0.40
0.60
0.80
1.00
1.20
0.00 0.05 0.10 0.15 0.20 0.25
Displac e m e nt Dis t an ce ( in che s)
Typical I
C(ON)
Response (mA )
Right to Left
Left to Right
Top to Bottom
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Combined
IC(ON)
On-State Collector Current (1)
OPB847
OPB848
4.0
1.0
-
-
-
-
mA
VCE = 10 V, IF = 20 mA
VCE = 10 V, IF = 20 mA
VCE(SAT)
Collector-Emitter Saturation Voltage
OPB847
OPB848
0.30
0.30
0.40
0.40
V
IC = 2 mA, IF = 20 mA
IC = 500 µA, IF = 20 mA
tr
Output Rise Time
OPB847
OPB848
12
8
20
15 µs
tf
Output Fall Time
OPB847
OPB848
12
8
20
15
VCC = 10 V, IF = 20 mA, RL = 1000Ω
Notes:
(1) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can
cause change in measurement results.
