T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 1 of 5
1N5415US thru 1N5420US
Available on
commercial
versions
VOIDLESS-HERME TICALLY SEALED S URFACE
MOUNT FAST RECOVERY GLASS RE CTIFI E RS
Qualified per MIL-PRF-19500/411
Qualified Levels:
JAN, J AN TX, JAN TXV
and JA N S
DESCRIPTION
This “fast recovery” recti fier diode series is military qualified and is ideal for high-reliability applications
where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated rectifiers for working peak
reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction usi ng an
internal “Category 1” metallurgical bond. These devices are also available in axial-leaded packages for
thru-hole mounting. Microsemi also offers numerous other rectifi er products to meet higher and lower
current ratings with various recovery time speed requirements including fast and ultrafast device types in
both through-hole and sur face mount pa cka ges.
“B” MELF or D-5B
Package
Also available in:
“B” Package
(axial-leaded)
1N5415 – 1N5420
Important: For the lates t information, visit our website http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent of JEDEC registered 1N5415 thru 1N5420 seri es.
• Voidless hermetically sealed glass package.
• Quadruple-layer passivation.
• Internal “Category 1” Metallurgical bonds.
• Working Peak Reverse Vol tage 50 to 600 Volts.
• JAN, JANTX, JANTXV and JANS qualification per MIL-PRF-19500/411 available.
• RoHS compliant versions available (commercial grade only).
APPLIC ATIONS / BENEFITS
• Fast recovery 3 Amp rectifiers 50 to 600 V.
• Military and other high-reliability applications.
• General rectifier applications including bridges, half-bridges, catch diodes, etc.
• High forward surge current capability.
• Extremely robust construction.
• Low thermal resis tance.
• Controlled avalanche with peak reverse power capability.
• Inherently radiation hard as described in Microsemi “Micr oNote 050 ”.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: + 353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Thermal Resistance Junction-to-End Cap
RӨJEC
6.5
oC/W
Forward Surge Current @ 8.3 ms ha lf-sine
IFSM
80
A
Average Rectified Forward Current
(3)
@ T A = 55
o
C
@ T A = 100
o
C
IO
( 1, 2)
IO
(2)
3
2
A
Worki ng Peak Reverse V oltage 1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
VRWM
50
100
200
400
500
600
V
Maximum Reverse Recovery Time (5) 1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
trr
150
150
150
150
250
400
ns
Solder Temperature @ 10 s
TSP
260
oC
S ee n ot es on ne xt page.
T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 2 of 5
1N5415US thru 1N5420US
MAXIMUM RATINGS
Notes: 1. Derate linearly at 22 mA/oC for 55 oC < TA < 100 oC.
2. Above TA = 100 oC, derate linearly at 26.7 mA/oC to z ero at TA = 175 oC.
3. These ambient ratings are for PC boards where thermal resistan ce from mounting point to ambient is sufficiently controlled where TJ( max)
does not exceed 175 oC.
• CASE: Hermetically sealed voidless hard glass with Tungsten slugs.
• TERMINALS: End caps are Copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver with Tin/Lead (Sn/Pb)
finish. RoHS comp liant matte-Tin is available for commerci al grade only.
• MARKING: Cathode band only.
• POLARITY: Cathode indicated by band.
• TAPE & REEL option: Standard per EIA-481-B. Contact factory for quantities.
• WEIGHT: 539 milligrams.
• See Package Dimensions and recommended Pad Layout on last page.
JAN 1N5415 US (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See Electrical Characteristics
table
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
MELF Package
SYMBOLS & DEF INITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum vol tage the device will exhi bit at a specified current.
VRWM
Worki ng Peak Reverse V oltage: The maximum peak voltage that can be applied over the operating temperature range
ex cluding all tr ansient voltages (ref JESD282-B).
IO
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward di rection to the reverse direction and a specified decay point after a peak reverse current occurs.
T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 3 of 5
1N5415US thru 1N5420US
TYPE
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 50
µ
A
Volts
FORWARD
VOLTAGE
VF @ 9 A
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
CAPACITANCE
C
VR @ 4 V
pF
MIN.
Volts MAX.
Volts 25
o
C
µA 100
o
C
µA
1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
55
110
220
440
550
660
0.6
0.6
0.6
0.6
0.6
0.6
1.5
1.5
1.5
1.5
1.5
1.5
1.0
1.0
1.0
1.0
1.0
1.0
20
20
20
20
20
20
550
430
250
165
140
120
NOTE 1: IF = 0.5 A, IRM = 1 A, IR(REC) = 0.250 A
T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 4 of 5
1N5415US thru 1N5420US
% PIV H eating Ti me (sec)
FIGURE 1 FIGURE 2
Typical Reverse C urrent vs. P IV Max i mum Th er mal Imped ance
VF – VOLTAGE (V)
FIGURE 3
Typical For ward Cur r ent vs. For ward V ol tage
I
F
– CURRENT (µA)
ZOJX (oC/Watt)
I
F
– CURRENT (A)
T4-LDS-0231-1, Rev. 1 (111902) ©2011 Microsemi Corporation Page 5 of 5
1N5415US thru 1N5420US
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information only.
3. Dimensions are pre-solder dip.
4. Minimum clearance of glass body to mounting surface on all orientations.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
6. This Package Outline has also previously been identified as “D-5B”
INCH MILLIMETERS
MIN
MAX
MIN
MAX
BL
0.200 0.225 5.08 5.72
BD 0.137 0.148 3.48 3.76
ECT 0.019 0.028 0.48 0.71
S 0.003 --- 0.08 ---
INCH
MILLIMETERS
A
0.288
7.32
B
0.070
1.78
C 0.155 3.94
Note: If mounting requires adhesive
separate from the solder , an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.