SUU06N10-225L
Vishay Siliconix
www.vishay.com
2Document Number: 71254
S-01584—Rev. A, 17-Jul-00
SPECIFICATIONS (TJ=25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min TypaMax Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS =0V,I
D= 250 mA100
Gate Threshold Voltage VGS(th) VDS =V
GS,I
D= 250 mA1.0 3.0
Gate-Body Leakage IGSS VDS =0V,V
GS =20 V 100 nA
VDS =80V,V
GS =0V 1
Zero Gate Voltage Drain Current IDSS VDS =80V,V
GS =0V,T
J= 125_C50 mA
VDS =80V,V
GS =0V,T
J= 175_C250
On-State Drain CurrentbID(on) VDS =5V,V
GS =10V 8.0 A
VGS =10V,I
D=3A 0.160 0.200
VGS =10V,I
D=3A,T
J= 125_C0.350
Drain-Source On-State Resistance
rDS(on) VGS =10V,I
D=3A,T
J= 175_C0.450 Ω
VGS =4.5V,I
D=1.0A 0.180 0.225
Forward Transconductancebgfs VDS =15V,I
D=3A 8.5 S
Dynamica
Input Capacitance Ciss 240
Output Capacitance Coss VGS =0V,V
DS =25V,F=1MHz 42 pF
Reverse Transfer Capacitance Crss 17
Total Gate ChargecQg2.7 4.0
Gate-Source ChargecQgs VDS =50V, V
GS =5V,I
D=6.5A 0.6 nC
Gate-Drain ChargecQgd
0.7
Turn-On Delay Timectd(on) 711
Rise Timectr
=50
,R
=7.5Ω812
Turn-Off Delay Timectd(off)
,
.
ID≅6.5 A, VGEN =10V,R
g=2.5Ω812 ns
Fall Timectf914
Source-Drain Diode Ratings and Characteristic (TC=25_C)
Pulsed Current ISM 8.0 A
Diode Forward VoltagebVSD IF=6.5A,V
GS =0V 0.9 1.3 V
Source-Drain Reverse Recovery Time trr IF= 6.5 A, di/dt = 100 A/ms35 60 ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤300 ms, duty cycle ≤2%.
c. Independent of operating temperature.