1
Item Symbol Ratings Unit
Drain-source voltage V DS 500
Continuous drain current ID±16
Pulsed drain current ID(puls] ±64
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 16
Maximum Avalanche Energy E AS *1 212.2
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 1.67
Tc=25°C 225
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3581-01L,S,SJ
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=7A VGS=10V
ID=7A VDS=25V
VCC=300V ID=7A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.556
75.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=14A
VGS=10V
L=2.27mH Tch=25°C
IF=14A VGS=0V Tch=25°C
IF=14A VGS=0V
-di/dt=100A/µs Tch=25°C
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
500
3.0 5.0
25
250
10 100
0.35 0.46
714
1600 2400
160 240
7 10.5
18 27
16 24
35 50
815
33 50
12.5 19
10.5 16
16 1.00 1.50
0.65
6.0
-55 to +150
Outline Drawings [mm]
P4
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<*4 VDS 500V
<
=
200304
*1 L=1.52mH, Vcc=50V,Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C
=
<
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2
0.1 1 10
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
Characteristics
2SK3581-01L,S,SJ FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0 2 4 6 8 10 12 14 16 18 20 22
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30 20V
10V
8V 7.5V
7.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=6.5V
012345678910
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
0 5 10 15 20 25 30
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
7.0V
VGS=6.5V
0 255075100125150
0
50
100
150
200
250
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
450
500
IAS=7A
IAS=10A
IAS=16A
EAS [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
EAS=f(s tart ing T c h): Vcc=50V
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3
2SK3581-01L,S,SJ FUJI POWER MOSFET
VGS=f(Qg):ID=14A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=7A,VGS=10V
0 1020304050607080
0
2
4
6
8
10
12
14
16
18
20
22
24
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
400V
250V
Vcc= 100V
10-1 100101102103
1p
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
100101
100
101
102
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
VGS(th) [V]
Tch [°C]
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4
2SK3581-01L,S,SJ FUJI POWER MOSFET
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current vs Pulse width
IAV=f(tAV):starting Tc h= 25°C,Vcc=50V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
Outline Drawings (mm)
Type(S) Type(SJ)
1 2 3 1
2
3
Type(L)
1
2
3
1 2 3
4
4
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