HM66AQB9404BP-33 - Renesas Technology / Hitachi Semiconductor

Regarding the change of names mentioned in the document, such as Hitachi

Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand

names are mentioned in the document, these names have in fact all been changed to Renesas

Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and

corporate statement, no changes whatsoever have been made to the contents of the document, and

these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

To all our customers

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

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Remember to give due consideration to safety when making your circuit designs, with appropriate

measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or

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Note: QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by

Cypress Semiconductor, IDT, Micron Technology, Inc., NEC, Samsung, and Hitachi.

Preliminary: The specifications of this device are subject to change without notice. Please contact

your nearest Hitachi’s Sales Dept. regarding specifications.

HM66AQB36104/HM66AQB18204

HM66AQB9404/HM66AQB8404

36-Mbit QDR TMII SRAM

4-word Burst

ADE-203-1331B (Z)

Preliminary

Rev. 0.2

Jan. 14, 2003

Description

The HM66AQB36104 is a 1,048,576-word by 36-bit, the HM66AQB18204 is a 2,097,152-word by 18-bit,

the HM66AQB9404 is a 4,194,304-word by 9-bit, and the HM66AQB8404 is a 4,194,304-word by 8-bit

synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-

transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input

registers controlled by an input clock pair (K and K) and are latched o n the positive edge of K and K.

These products are suitable for applications which require synchronous operation, high speed, low voltage,

high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 2 of 31

Features

• 1.8 V ± 0.1 V power supply for core (VDD)

• 1.4 V to VDD power supply for I/O (VDDQ)

• DLL circuitry for wide output data valid window and future frequency scaling

• Separate independent read and write data ports with concurrent transactions

• 100% bus utilization DDR read and write operation

• Four-tick burst for reduced address frequency

• Two input clocks (K and K) for precise DDR timing at clock rising edges only

• Two output clocks (C and C) for precise flight time and clock skew matching-clock and data delivered

together to receiving device

• Internally self-timed write control

• Clock-stop capability with µs restart

• User programmable impedance output

• Fast clock cycle time: 3.0 ns (333 MHz)/3.3 ns (300 MHz)/4.0 ns (250 MHz)/

5.0 ns (200 MHz)/6.0 ns (167 MHz)

• Simple control logic for easy depth expansion

• JTAG boundary scan

Ordering Information

Type No. Organization Cycle time Clock frequency Package

HM66AQB36104BP-30

HM66AQB36104BP-33

HM66AQB36104BP-40

HM66AQB36104BP-50

HM66AQB36104BP-60

1-M word

× 36-bit 3.0 ns

3.3 ns

4.0 ns

5.0 ns

6.0 ns

333 MHz

300 MHz

250 MHz

200 MHz

167 MHz

Plastic FBGA 165-pin

(BP-165A)

HM66AQB18204BP-30

HM66AQB18204BP-33

HM66AQB18204BP-40

HM66AQB18204BP-50

HM66AQB18204BP-60

2-M word

× 18-bit 3.0 ns

3.3 ns

4.0 ns

5.0 ns

6.0 ns

333 MHz

300 MHz

250 MHz

200 MHz

167 MHz

HM66AQB9404BP-30

HM66AQB9404BP-33

HM66AQB9404BP-40

HM66AQB9404BP-50

HM66AQB9404BP-60

4-M word

× 9-bit 3.0 ns

3.3 ns

4.0 ns

5.0 ns

6.0 ns

333 MHz

300 MHz

250 MHz

200 MHz

167 MHz

HM66AQB8404BP-30

HM66AQB8404BP-33

HM66AQB8404BP-40

HM66AQB8404BP-50

HM66AQB8404BP-60

4-M word

× 8-bit 3.0 ns

3.3 ns

4.0 ns

5.0 ns

6.0 ns

333 MHz

300 MHz

250 MHz

200 MHz

167 MHz

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 3 of 31

Pin Arrangement (HM66AQB36104) 165PIN-BGA

1 2 3 4 5 6 7 8 9 10 11

A CQ VSS NC W BW2 K BW1 R SA NC CQ

B Q27 Q18 D18 SA BW3 K BW0 SA D17 Q17 Q8

C D27 Q28 D19 VSS SA NC SA V

S D16 Q7 D8

D D28 D20 Q19 VSS V

S V

S Q16 D15 D7

E Q29 D29 Q20 VDDQ V

S V

DQ Q15 D6 Q6

F Q30 Q21 D21 VDDQ V

D V

S V

D V

DQ D14 Q14 Q5

G D30 D22 Q22 VDDQ V

D V

S V

D V

DQ Q13 D13 D5

H DOFF VREF V

DDQ V

D V

S V

D V

DQ V

DDQ V

REF ZQ

J D31 Q31 D23 VDDQ V

D V

S V

D V

DQ D12 Q4 D4

K Q32 D32 Q23 VDDQ V

D V

S V

D V

DQ Q12 D3 Q3

L Q33 Q24 D24 VDDQ V

S V

DQ D11 Q11 Q2

M D33 Q34 D25 VSS V

S V

S D10 Q1 D2

N D34 D26 Q25 VSS SA SA SA V

S Q10 D9 D1

P Q35 D35 Q26 SA SA C SA SA Q9 D0 Q0

R TDO TCK SA SA SA C SA SA SA TMS TDI

(Top view)

Pin Arrangement (HM66AQB18204) 165PIN-BGA

1 2 3 4 5 6 7 8 9 10 11

A CQ VSS SA W BW1 K NC R SA NC CQ

B NC Q9 D9 SA NC K BW0 SA NC NC Q8

C NC NC D10 VSS SA NC SA V

S NC Q7 D8

D NC D11 Q10 VSS V

S V

S NC NC D7

E NC NC Q11 VDDQ V

S V

DQ NC D6 Q6

F NC Q12 D12 VDDQ V

D V

S V

D V

DQ NC NC Q5

G NC D13 Q13 VDDQ V

D V

S V

D V

DQ NC NC D5

H DOFF V

REF V

DDQ V

D V

S V

D V

DQ V

DDQ V

REF ZQ

J NC NC D14 VDDQ V

D V

S V

D V

DQ NC Q4 D4

K NC NC Q14 VDDQ V

D V

S V

D V

DQ NC D3 Q3

L NC Q15 D15 VDDQ V

S V

DQ NC NC Q2

M NC NC D16 VSS V

S V

S NC Q1 D2

N NC D17 Q16 VSS SA SA SA V

S NC NC D1

P NC NC Q17 SA SA C SA SA NC D0 Q0

R TDO TCK SA SA SA C SA SA SA TMS TDI

(Top view)

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 4 of 31

Pin Arrangement (HM66AQB9404) 165PIN-BGA

1 2 3 4 5 6 7 8 9 10 11

A CQ VSS SA W NC K NC R SA SA CQ

B NC NC NC SA NC K BW SA NC NC Q3

C NC NC NC VSS SA NC SA V

S NC NC D3

D NC D4 NC VSS V

S V

S NC NC NC

E NC NC Q4 VDDQ V

S V

DQ NC D2 Q2

F NC NC NC VDDQ V

D V

S V

D V

DQ NC NC NC

G NC D5 Q5 VDDQ V

D V

S V

D V

DQ NC NC NC

H DOFF V

REF V

DDQ V

D V

S V

D V

DQ V

DDQ V

REF ZQ

J NC NC NC VDDQ V

D V

S V

D V

DQ NC Q1 D1

K NC NC NC VDDQ V

D V

S V

D V

DQ NC NC NC

L NC Q6 D6 VDDQ V

S V

DQ NC NC Q0

M NC NC NC VSS V

S V

S NC NC D0

N NC D7 NC VSS SA SA SA V

S NC NC NC

P NC NC Q7 SA SA C SA SA NC D8 Q8

R TDO TCK SA SA SA C SA SA SA TMS TDI

(Top view)

Pin Arrangement (HM66AQB8404) 165PIN-BGA

1 2 3 4 5 6 7 8 9 10 11

A CQ VSS SA W NW1 K NC R SA SA CQ

B NC NC NC SA NC K NW0 SA NC NC Q3

C NC NC NC VSS SA NC SA V

S NC NC D3

D NC D4 NC VSS V

S V

S NC NC NC

E NC NC Q4 VDDQ V

S V

DQ NC D2 Q2

F NC NC NC VDDQ V

D V

S V

D V

DQ NC NC NC

G NC D5 Q5 VDDQ V

D V

S V

D V

DQ NC NC NC

H DOFF V

REF V

DDQ V

D V

S V

D V

DQ V

DDQ V

REF ZQ

J NC NC NC VDDQ V

D V

S V

D V

DQ NC Q1 D1

K NC NC NC VDDQ V

D V

S V

D V

DQ NC NC NC

L NC Q6 D6 VDDQ V

S V

DQ NC NC Q0

M NC NC NC VSS V

S V

S NC NC D0

N NC D7 NC VSS SA SA SA V

S NC NC NC

P NC NC Q7 SA SA C SA SA NC NC NC

R TDO TCK SA SA SA C SA SA SA TMS TDI

(Top view)

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 5 of 31

Pin Descriptions

Name I/O type Descriptions

SAn Input Synchronous address inputs: These inputs are registered and must meet the setup and

hold times around the rising edge of K. Ball 2A is reserved for the next higher-order

address input on future devices. All transactions operate on burst-of-four words (two

clock periods of bus activity). These inputs are ignored when device is deselected.

R Input Synchronous read: When low, this input causes the address inputs to be registered and

a READ cycle to be initiated. This input must meet setup and hold times around the

rising edge of K, and is ignored on the subsequent rising edge of K.

W Input Synchronous write: When low, this input causes th

address inputs to be registered and

a WRITE cycle to be initiated. This input must meet setup and hold times around the

rising edge of K, and is ignored on the subsequent rising edge of K.

NWn

BWn

Input Synchronous byte writes (nibble writes on ×8): When low, these inputs cause their

respective byte or nibble to be registered and written during WRITE cycles. These

signals must meet setup and hold times around the rising edges of K and K for each of

two rising edges comprising the WRITE cycle. See Byte Write Truth Table for signal to

data relationship.

K, K Input Input clock: This input clock pair registers address and control inputs on the rising edge

of K, and registers data on the rising edge of K and the rising edge of K. K is ideally 180

degrees out of phase with K. All synchronous inputs must meet setup and hold times

around the clock rising edges.

C, C Input Output clock: This clock pair provides a user-controlled means of tuning device output

data. The rising edge of C is used as the output timing reference for second and fourth

output data. The rising edge of C is used as the output reference for first and third

output data. Ideally, C is 180 degrees out of phase with C. C and C may be tied high to

force the use of K and K as the output reference clocks instead of having to provide C

and C clocks. If tied high, C and C

must remain high and not to be toggled during device

operation.

DOFF Input DLL disable: When low, this input causes the DLL to be bypassed for stable, low

frequency operation.

ZQ Input Output impedance matching input: This input is used to tune the device outputs to the

system data bus impedance. Q and CQ output impedance are set to 0.2 × RQ, where

RQ is a resistor from this ball to ground. Alternately, this ball can be connected directly

to VDDQ, which enables the minimum impedance mode. This ball cannot be connected

directly to VSS or left unconnected.

TMS

TDI Input IEEE1149.1 test inputs: 1.8 V I/O levels. These balls may be left not connected if the

JTAG function is not used in the circuit.

TCK Input IEEE1149.1 clock input: 1.8 V I/O levels. This ball must be tied to VSS if the JTAG

function is not used in the cir c uit.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 6 of 31

Name I/O type Descriptions

D0 to Dn Input Synchronous data inputs: Input data must meet setup and hold times around the rising

edges of K and K during WRITE operations. See Pin Arrangement figures for ball site

location of individual signals.

The ×8 device uses D0 to D7. Remaining signals are NC.

The ×9 device uses D0 to D8. Remaining signals are NC.

The ×18 device uses D0 to D17. Remaining signals are NC.

The ×36 device uses D0 to D35.

NC signals are read in the JTAG scan chain as the logic level applied to the ball site.

CQ, CQ Output Synchronous echo clock outputs: The edges of these outputs are tightly matched to the

synchronous data outputs and can be used as a data valid indication. These signals run

freely and do not stop when Q tri-states.

TDO Output IEEE 1149.1 test output: 1.8 V I/O level.

Q0 to Qn Output Synchronous data outputs: Output data is synchronized to the respective C and C, or to

the respective K and K rising edges if C and C are tied high. This bus operates in

response to R commands. See Pin Arrangement figures for ball site location of

individual signals.

The ×8 device uses Q0 to Q7. Remaining signals are NC.

The ×9 device uses Q0 to Q8. Remaining signals are NC.

The ×18 device uses Q0 to Q17. Remaining signals are NC.

The ×36 device uses Q0 to Q35.

NC signals are read in the JTAG scan chain as the logic level applied to the ball site.

VDD Supply Power supply: 1.8 V nominal. See DC Characteristics and Operating Conditions for

range.

VDDQ Supply Power supply: Isolated output buffer supply. Nominally 1.5 V. 1.8 V is also permissible.

See DC Characteristics and Operating Conditions for range.

VSS Supply Power supply: Ground

VREF  HSTL input reference voltage: Nominally VDDQ/2. Provides a reference voltage for the

input buffers.

NC  No connect: These signals are internally connected and appear in the JTAG scan chain

as the logic level applied to the ball sites. These signals may be connected to ground to

improve packa ge heat dis si pation.

Note: 1. All power supply and ground balls must be connected for proper operation of the device.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 7 of 31

Block Diagram (HM66AQB36104)

BW2

BW0

Address

registry

and logic

BW3

BW1

D0 to D35 36

144

Data

registry

and logic Memory

array

MUX

Write

driver

Sense

amps

Output

select

Output

buffer

CC,

CQ,

Q0 to Q35

Block Diagram (HM66AQB18204)

BW1

BW0

Address

D0 to D17 18

Address

registry

and logic

Data

registry

and logic Memory

array

MUX

Write

driver

Sense

amps

Output

select

Output

buffer

CC,

CQ,

Q0 to Q17

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 8 of 31

Block Diagram (HM66AQB9404)

Address

D0 to D8 9

Address

registry

and logic

Data

registry

and logic Memory

array

MUX

Write

driver

Sense

amps

Output

select

Output

buffer

C C,

CQ,

Q0 to Q8

Block Diagram (HM66AQB8404)

NW1

NW0

Address

D0 to D7 8

Address

registry

and logic

Data

registry

and logic Memory

array

MUX

Write

driver

Sense

amps

Output

select

Output

buffer

C C,

CQ,

Q0 to Q7

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 9 of 31

Truth Table

Operation

D or Q

WRITE cycle L→H H*7 L*8 Data in

Input

data DA(A+0) DA(A+1) DA(A+2) DA(A+3) Load address, input write data on

two consecutive K and K rising

edges Input

clock K(t+1)↑ K(t+1)↑ K(t+2)↑ K(t+2)↑

READ cycle L→H L*8 × Data out

Output

data QA(A+0) QA(A+1) QA(A+2) QA(A+3) Load address, read data on two

consecutive C and C rising

edges Output

clock C(t+1)↑ C(t+2)↑ C(t+2)↑ C(t+3)↑

NOP (No operation) L→H H H D = × or Q = High-Z

STANDBY (Clock stopped) Stopped × × Previous state

Notes: 1. H: high level, L: low level, ×: don’t care, ↑: rising edge.

2. Data inputs are registered at K and K rising edges. Data outputs are delivered at C and C rising

edges, except if C and C are high, then data outputs are delivered at K and K rising edges.

3. R and W must meet setup/hold times around the rising edges (low to high) of K and are

registered at the rising edge of K.

4. This device contains circuitry that will ensure the outputs will be in high-Z during power-up.

5. Refer to state diagram and timing diagrams for clarification.

6. It is recommended that (K) = /(K) = (C) = /(C) when clock is st opped. This is not essential, b ut

permits most rapid restart by overcoming transmission line charging symmetrically.

7. If this signal was low to initiate the previous cycle, this signal becomes a “don’t care” for this

operation; however, it is strongly recommended that this signal be brought high, as shown in the

truth table.

8. This signal was high on previous K clock rising edge. Initiating consecutive READ or WRITE

operations on consecutive K clock rising edges is not permitted. The device will ignore the

second request.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 10 of 31

Byte Write Truth Table

(HM66AQB36104)

Operation K K

BW0

BW0BW0

BW0

BW1

BW1BW1

BW1

BW2

BW2BW2

BW2

BW3

BW3BW3

BW3

Write D0 to D35 L→H  0 0 0 0

 L→H 0 0 0 0

Write D0 to D8 L→H  0 1 1 1

 L→H 0 1 1 1

Write D9 to D17 L→H  1 0 1 1

 L→H 1 0 1 1

Write D18 to D26 L→H  1 1 0 1

 L→H 1 1 0 1

Write D27 to D35 L→H  1 1 1 0

 L→H 1 1 1 0

Write nothing L→H  1 1 1 1

 L→H 1 1 1 1

Notes: 1. H: high level, L: low level, →: rising edge.

2. Assumes a WRITE cycle was initiated. BW0 to BW3 can be altered for any portion of the

BURST WRITE operation provided that the setup and hold requirements are satisfied.

(HM66AQB18204)

Operation K K

BW0

BW0BW0

BW0

BW1

BW1BW1

BW1

Write D0 to D17 L→H  0 0

 L→H 0 0

Write D0 to D8 L→H  0 1

 L→H 0 1

Write D9 to D17 L→H  1 0

 L→H 1 0

Write nothing L→H  1 1

 L→H 1 1

Notes: 1. H: high level, L: low level, →: rising edge.

2. Assumes a WRITE cycle was initiated. BW0 and BW1 can be altered for any portion of the

BURST WRITE operation provided that the setup and hold requirements are satisfied.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 11 of 31

(HM66AQB9404)

Operation K K

BWBW

Write D0 to D8 L→H  0

 L→H 0

Write nothing L→H  1

 L→H 1

Notes: 1. H: high level, L: low level, →: rising edge.

2. Assumes a WRITE cycle was initiated. BW can be altered for any portion of the BURST WRITE

operation provided that the setup and hold requirements are satisfied.

(HM66AQB8404)

Operation K K

NW0

NW0NW0

NW0

NW1

NW1NW1

NW1

Write D0 to D7 L→H  0 0

 L→H 0 0

Write D0 to D3 L→H  0 1

 L→H 0 1

Write D4 to D7 L→H  1 0

 L→H 1 0

Write nothing L→H  1 1

 L→H 1 1

Notes: 1. H: high level, L: low level, →: rising edge.

2. Assumes a WRITE cycle was initiated. NW0 and NW1 can be altered for any portion of the

BURST WRITE operation provided that the setup and hold requirements are satisfied.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 12 of 31

Bus Cycle State Diagram

LOAD NEW

WRITE ADDRESS;

W_Count = 0

= L & W_Count = 4

WRITE DOUBLE;

W_Count = W_Count+2

Always

Supply voltage

provided

Supply voltage

provided

W_Count = 2

Always

= L & R_Count = 4

= H & W_Count = 4

= H & R_Count = 4

= L

R_Init = 0

= H

Always

R_Count = 2

INCREMENT WRITE

ADDRESS BY TWO *

LOAD NEW

READ ADDRESS;

R_Count = 0;

R_Init = 1

READ DOUBLE;

R_Count = R_Count+2 INCREMENT READ

ADDRESS BY TWO *

R_Init = 0

WRITE PORT NOP

READ PORT NOP

R_Init = 0

POWER UP

= H

Notes: 1. The address is concatenated with two additional internal LSBs to facilitate burst operation. The

address order is alwa ys fix ed as: xxx… x xx+ 0, xx x… xx x+1 , xxx…xxx+2 , xxx… xx x+3.

Bus cycle is terminated at the end of this sequence (burst count = 4).

2. Read and write state machines can be active simultaneously. Read and write cannot be

simultaneously initiated. Read takes precedence.

3. State machine control timing is controlled by K.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 13 of 31

Absolute Maximum Ratings

Parameter Symbol Rating Unit Notes

Input voltag e on any ball VIN −0.5 to VDD + 0.5

(2.9 V max.) V 1, 4

Input/output voltage VI/O −0.5 to VDDQ + 0.5

(2.9 V max.) V 1, 4

Core supply voltage VDD −0.5 to 2.9 V 1, 4

Output supply voltage VDDQ −0.5 to VDD V 1, 4

Junction temperature Tj +125 (max) °C

Storage temperature TSTG −55 to +125 °C

Notes: 1. All voltage is referenced to VSS.

2. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional

operation should be restricted the Operation Conditions. Exposure to higher than recommended

voltages for extended periods of time could affect device reliability.

3. These CMOS memory circuits have been designed to meet the DC and AC specifications shown

in the tables after thermal equilibrium has been established.

4. The following supply voltage application sequence is recommended: VSS, VDD, VDDQ, VREF then VIN.

Remember, according to the Absolute Maximum Ratings table, VDDQ is not to exceed 2.9 V,

whatever the instantaneous value of VDDQ.

Recommended DC Operating Conditions (Ta = 0 to +70°C)

Parameter Symbol Min Typ Max Unit Notes

Power supply voltage -- core VDD 1.7 1.8 1.9 V

Power supply voltage -- I/O VDDQ 1.4 1.5 VDD V

Input reference voltage -- I/O VREF 0.68 0.75 0.95 V 1

Input high voltage VIH (DC) V

REF + 0.1  V

DDQ + 0.3 V 2, 3

Input low voltage VIL (DC) −0.3  V

REF − 0.1 V 2, 3

Notes: 1. Peak to peak AC component superimposed on VREF may not exceed 5% of VREF.

2. VREF = 0.75 V (typ).

3. Overshoot: VIH (AC ) ≤ VDD + 0.7 V for t ≤ tKHKH/2

Undershoot: VIL (AC ) ≥ −0.5 V for t ≤ tKHKH/2

Power-up: VIH ≤ VDDQ + 0.3 V and VDD ≤ 1.7 V and VDDQ ≤ 1.4 V for t ≤ 200 ms

During normal operation, VDDQ must not exceed VDD.

Control input signals may not have pulse widths less than tKHKL (min) or operate at cycle rates less

than tKHKH (min).

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 14 of 31

DC Characteristics (Ta = 0 to +70°C, VDD = 1.8 V ± 0.1 V)

HM66AQB36104/HM66AQB18204

HM66AQB9404/HM66AQB8404

-30 -33 -40 -50 -60

Parameter Symbol

Typ Max Unit Notes

Operating supply current

(READ / WRITE) (×8 / ×9 / ×18) IDD TBD 525 475 400 330 280 mA

(×36) IDD TBD 710 640 545 445 380 mA

Standby supply current

(NOP) (×8 / ×9 / ×18 ) I SB1 TBD 255 235 200 170 145 mA

(×36) ISB1 TBD 265 245 210 180 155 mA

Notes: 1. All inputs (except ZQ, VREF) are held at either VIH or VIL.

2. IOUT = 0 mA. VDD = VDD max, tKHKH = tKHKH min.

3. Typical values are measured at VDD = 1.8 V, VDDQ = 1.5 V, Ta = +25°C , and tKHKH = 6 ns.

4. Operating supply currents are m easure d at 100% bus utili zation.

5. NOP currents are valid when entering NOP after all pending READ and WRITE cycles are

completed.

Parameter Symbol Min Max Unit

Test conditions Notes

Input leakage current ILI −2 2 µA 8

Output leakage current ILO −2 2 µA 9

Output high voltage VOH

(Low)

VDDQ − 0.2 VDDQ V |IOH| ≤ 0.1 mA 3, 4

OH VDDQ/2 − 0.08 VDDQ/2 + 0.08 V Notes1 3, 4

Output low voltage VOL

(Low)

VSS 0.2 V IOL ≤ 0.1 mA 3, 4

OL VDDQ/2 − 0.08 VDDQ/2 + 0.08 V Notes2 3, 4

Output “High” current IOH (VDDQ/2)/(RQ/5 + 10%)

(VDDQ/2)/(RQ/5 − 10%)

mA 5, 7

Output “Low” current IOL (VDDQ/2)/(RQ/5 − 10%)

(VDDQ/2)/(RQ/5 + 10%)

mA 6, 7

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 15 of 31

Notes: 1. Outputs are impedance-co ntrolled. |IOH| = (VDDQ/2)/(RQ/5) for values of 175 Ω ≤ RQ ≤ 350 Ω.

2. Outputs are impedance-co ntrolled. IOL = (VDDQ/2)/(RQ/5) for values of 175 Ω ≤ RQ ≤ 350 Ω.

3. AC load current is higher than the shown DC values. AC I/O curves are available upon request.

4. HSTL outputs meet JEDEC HSTL Class I and Class II standards.

5. Measured at VOH = VDDQ/2

6. Measured at VOL = VDDQ/2

7. Output buffer impedance can be programmed by terminating the ZQ ball to VSS through a

precision resistor (RQ). The value of RQ is five times the output impedance desired. The

allowable range of RQ to guarantee impedance matching with a tolerance of 10% is 250 Ω

typical. The total external capacitance of ZQ ball must be less than 7.5 pF.

8. 0 ≤ VIN ≤ VDDQ for all input balls (except VREF, ZQ ball)

9. 0 ≤ VOUT ≤ VDDQ, output disabled.

10. VDDQ = 1.5 V ± 0.1 V

Capacitance (Ta = +25°C, f = 1 .0 MHz, VDD = 1.8 V)

Parameter Symbol Min Typ Max Unit Test conditions

Input capacitan ce CIN  4 5 pF VIN = 0 V

Clock input capacitance CCLK  5 6 pF VCLK = 0 V

Input/output capacitance (D, Q) CI/O  6 7 pF VI/O = 0 V

Notes: 1. These parameters are sampled and not 100% tested.

2. Parameters tested with RQ = 250 Ω and VDDQ = 1.5 V.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 16 of 31

AC Characteristics (Ta = 0 to +70°C, VDD = 1.8 V ± 0.1 V)

Test Condit ions

Input waveform (Rise/fall time ≤ 0.3 ns)

0.75 V

1.25 V

0.25 V 0.75 V

Test points

Output waveform

DDQ

/2 V

DDQ

/2Test points

Output load condition

250 Ω

SRAM Zo = 50 Ω

50 Ω

VREF

VDDQ/2

0.75 V

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 17 of 31

Operating Co nditions

Parameter Symbol Min Typ Max Unit Notes

Input high voltage VIH (AC ) V

REF + 0.2   V 1, 2, 3

Input low voltage V IL (A C)   V

REF – 0.2 V 1, 2, 3

Notes: 1. All voltages referenced to VSS (GND).

2. Overshoot: VIH (A C ) ≤ VDD + 0.7 V for t ≤ tKHKH/2

Undershoot: VIL (AC ) ≥ −0.5 V for t ≤ tKHKH/2

Power-up: VIH ≤ VDDQ + 0.3 V and VDD ≤ 1.7 V and VDDQ ≤ 1.4 V for t ≤ 200 ms

During normal operation, VDDQ must not exceed VDD. R and W signals may not have pulse widths

less than tKHKL (min) or operate at cycle rates less than tKHKH (min).

3. To maintain a valid level, the transitioning edge of the input must:

a. Sustain a constant slew rate from the current AC level through the target AC level, VIL (AC ) or

IH (AC ).

b. Reach at least the target AC level.

c. After the AC target level is reached, continue to maintain at least the target DC level, VIL (DC)

or VIH (DC).

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 18 of 31

HM66AQB36104/HM66AQB18204

HM66AQB9404/HM66AQB8404

-30 -33 -40 -50 -60

Parameter Symbol

Min Max Min Max Min Max Min Max Min Max Unit Notes

Average clock

cycle time

(K, K, C, C)

tKHKH 3.00 3.47 3.30 4.20 4.00 5.25 5.00 6.30 6.00 7.88 ns

Clock phase

jitter

(K, K, C, C)

tKC var  0.20  0.20  0.20  0.20  0.20 ns 3

Clock high time

(K, K, C, C) tKHKL 1.20  1.32  1.60  2.00  2.40  ns

Cloc k low time

(K, K, C, C) tKLKH 1.20  1.32  1.60  2.00  2.40  ns

Clock to clock

(K to K, C to C) tKH/KH 1.35  1.49  1.80  2.20  2.70  ns

Clock to clock

(K to K, C to C) t/KHKH 1.35  1.49  1.80  2.20  2.70  ns

Clock to data

clock

(K to C, K to C)

tKHCH 0 1.30 0 1.45 0 1.80 0 2.30 0 2.80 ns

DLL lock time

(K, C) tKC lock 1,024  1,024  1,024  1,024  1,024  Cycle 2

K static to DLL

reset tKC reset

30  30  30  30  30  ns

C, C high to

output valid tCHQV  0.45  0.45  0.45  0.45  0.50 ns

C, C high to

output hold tCHQX −0.45  −0.45  −0.45  −0.45  −0.50  ns

C, C high to

echo clock

valid

tCHCQV  0.45  0.45  0.45  0.45  0.50 ns

C, C high to

echo clock hold tCHCQX −0.45  −0.45  −0.45  −0.45  −0.50  ns

CQ, CQ high to

output valid tCQHQV  0.25  0.27  0.30  0.35  0.40 ns 4

CQ, CQ high to

output hold tCQHQX −0.25  −0.27  −0.30  −0.35  −0.40  ns 4

C high to

output high-Z tCHQZ  0.45  0.45  0.45  0.45  0.50 ns 5

C high to

output low-Z tCHQX1 −0.45  −0.45  −0.45  −0.45  −0.50  ns 5

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 19 of 31

HM66AQB36104/HM66AQB18204

HM66AQB9404/HM66AQB8404

-30 -33 -40 -50 -60

Parameter Symbol

Min Max Min Max Min Max Min Max Min Max Unit Notes

Address valid

to K rising edge tAVKH 0.40  0.40  0.50  0.60  0.70  ns 1

Control inputs

valid to K rising

edge

tIVKH 0.40  0.40  0.50  0.60  0.70  ns 1

Data-in valid to

K, K rising

edge

tDVKH 0.28  0.30  0.35  0.40  0.50  ns 1

K rising edge to

address hold tKHAX 0.40  0.40  0.50  0.60  0.70  ns 1

K rising edge to

control inputs

hold

tKHIX 0.40  0.40  0.50  0.60  0.70  ns 1

K, K rising

edge to data-in

hold

tKHDX 0.28  0.30  0.35  0.40  0.50  ns 1

Notes: 1. This is a synchronous device. All addresses, data and control lines must meet the specified

setup and hold times for all latching clock edges.

2. VDD slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention. DLL lock time begins

once VDD and input clo ck are st able.

It is recommended that the device is kept inactive during these cycles.

3. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.

4. Echo clock is very tightly controlled to data valid / data hold. By design, there is a ±0.1 ns

variation from echo clock to data. The datasheet parameters reflect tester guardbands and test

setup variations.

5. Transitions are measured ±100 mV from steady-state voltage.

6. At any given voltage and temperature tCHQZ is less than tCHQX1 and tCHQZ less than tCHQV.

Remarks: 1. This parameter is sampled.

2. Test conditions as specified with the output loading as shown in AC Test Conditions unless

otherwise note d.

3. Control input signals may not be operated with pulse widths less than tKHKL (min).

4. If C, C are tied high, K, K become the references for C, C timing param eters .

5. VDDQ is +1.5 V DC.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 20 of 31

Timing Waveforms

Read and Write Tim ing

NOP READ WRITE READ WRITE NOP

Address

Data in

Data out

1234567

A0 A1 A2

D10 D11 D12 D13 D30 D31 D32 D33

Q00 Q01Qx2 Qx3 Q02 Q03 Q20 Q21 Q22 Q23

KHKL

KLKH

KHKH

KH/KH

IVKH

KHIX

IVKH

KHIX

AVKH

KHAX

DVKH

KHDX

DVKH

KHDX

CQHQV

KHCH

CHQZ

CHQX

CHQV

CHCQV

CHQX1

CHCQX

CHCQV

CHCQX

KHKL

KLKH

KHKH

KH/KH

KHCH

/KHKH

CQHQX

/KHKH

Notes: 1. Q00 refers to output from address A0 + 0. Q01 refers to output from the next internal burst

address follow in g A0, i.e., A0 + 1.

2. Outputs are disable (high-Z) one clock cy cle after a NOP.

3. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11. Write data is forwarded

immediately as read results.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 21 of 31

JTAG Specification

These products support a limited set of JTAG functions as in IEEE standard 1149.1.

Disabling the Test Access Port

It is possible to use this device without utilizing the TAP. To disable the TAP controller without interfering

with normal operation of the device, TCK must be tied to VSS to preclude mid level inputs.

TDI and TMS are designed so an undriven input will produce a response identical to the application of a

logic 1, and may be left unconnected. But they may also be tied to VDD through a 1kΩ resistor.

TDO should be left unconnected.

Test Access Port (TAP) Pins

Symbol I/O Pin assignments Description

TCK 2R Test clock input. All inputs are captured on the rising edge of

TCK and all outputs propagate from the falling edge of TCK.

TMS 10R Test mode select. This is the command input for the TAP

controller state machine.

TDI 11R Test data input. This is the input side of the serial registers

placed between TDI and TDO. The register placed between

TDI and TDO is determined by the state of the TAP controller

state machine and the instruction that is currently loaded in

the TAP instruction.

TDO 1R Test data output. Output changes in response to the falling

edge of TCK. This is the output side of the serial registers

placed between TDI and TDO.

Note: The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is

held high for five rising edges of TCK. The TAP controller state is also reset on SRAM POWER-UP.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 22 of 31

TAP DC Operating Characteristics (Ta = 0 to +70°C, VDD = 1.8 V ± 0.1 V)

Parameter Symbol Min Max Unit Conditions

Input high voltage VIH 1.3 VDD + 0.3 V

Input low voltage VIL −0.3 +0.5 V

Input leakage current ILI −5.0 +5.0 µA 0 V ≤ VIN ≤ VDD

Output leakage current ILO −5.0 +5.0 µA 0 V ≤ VIN ≤ VDD,

output disabled

Output low voltage VOL1  0.2 V IOLC = 100 µA

OL2  0.4 V IOLT = 2 mA

Output high voltage VOH1 1.6  V |IOHC| = 100 µA

OH2 1.4  V |IOHT| = 2 mA

Notes: 1. All voltages referenced to VSS (GND).

2. Power-up: VIH ≤ VDDQ + 0.3 V and VDD ≤ +1.7 V and VDDQ ≤ +1.4 V for t ≤ 200 ms

3. In “EXTEST” mode and “SAMPLE” mode, VDDQ is nominally 1.5 V.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 23 of 31

TAP AC Test Condition

• Temperature 0°C ≤ Ta ≤ +70°C

• Input timing measurement reference levels 0.9 V

• Input pulse levels 0 V to 1.8 V

• Input rise/fall time ≤ 1.0 ns

• Output timing measurement reference levels 0.9 V

• Test load termin ation supply voltage (VTT) 0.9 V

• Output load See figures

Input waveform

0.9 V

1.8 V

0 V 0.9 V

Test points

Output waveform

0.9 V 0.9 VTest points

Output load

Zo = 50 Ω

20 pF

TDO

External load at test

50 Ω

VTT = 0.9 V

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 24 of 31

TAP AC Operating Characteristics (Ta = 0 to +70°C, VDD = 1.8 V ± 0.1 V)

Parameter Symbol Min Max Unit Note

Test clock cycle time tTHTH 100  ns

Test clock high pulse width tTHTL 40  ns

Test clock low pulse width tTLTH 40  ns

Test mode select setup tMVTH 10  ns

Test mode select hold t THMX 10  ns

Capture setup tCS 10  ns 1

Capture hold tCH 10  ns 1

TDI valid to TCK high tDVTH 10  ns

TCK high to TDI invalid tTHDX 10  ns

TCK low to TDO unknown tTLQX 0  ns

TCK low to TDO valid tTLQV  20 ns

Note: 1. tCS + tCH defines the minimum pause in RAM I/O pad transitions to assure pad data capture.

TAP Controller Timing Diagram

TCK

TMS

TDI

TDO

THDX

TLQV

THMX

DVTH

MVTH

THTH

THTL

TLTH

RAM

ADDRESS

TLQX

Test Access Port Registers

Instruction register 3 bits IR [2:0]

Bypass register 1 bit BP

ID register 32 bits ID [31:0]

Boundary scan register 109 bits BS [109:1]

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 25 of 31

TAP Controller Instruction Set

IR2 IR1 IR0 Instruction Description Notes

0 0 0 EXTEST The EXTEST instruction allows circuitry external to the

component package to be tested. Boundary scan register cells

at output balls are used to apply test vectors, while those at

input balls capture test results. Typically, the first test vector to

be applied using the EXTEST instruction will be shifted into the

boundary scan register using the PRELOAD instruction. Thus,

during the Update-IR state of EXTEST, the output drive is

turned on and the PRELOAD data is driven onto the output

balls.

1, 2

0 0 1 IDCODE The IDCODE instruction causes the ID ROM to be loaded into

the ID register when the controller is in capture-DR mode and

places the ID register between the TDI and TDO balls in shift-

DR mode. The IDCODE instruction is the default instruction

loaded in at power up and any time the controller is placed in

the Test-Logic-Reset state.

0 1 0 SAMPLE-Z If the SAMPLE-

instruction is loaded in the instruction register,

all RAM outputs are forced to an inactive drive state (high-Z,

except CQ, CQ ball) and the boundary register is connected

between TDI and TDO when the TAP controller is moved to the

shift-DR stat e.

0 1 1 RESERVED These instructions are not implemented but are reserved for

future use. Do not use these instructions.

1 0 0 SAMPLE

(-PRELOAD) When the SAMPLE instruction is loaded in the instruction

loads the data in the RAMs input and I/O buffers into the

boundary scan register. Because the RAM clock(s) are

independent from the TAP clock (TCK) it is possible for the

TAP to attempt to capture the I/O ring contents while the input

buffers are in transition (i.e., in a metastable state). Although

allowing the TAP to SAMPLE metastable input will not harm the

device, repeatable results cannot be expected. RAM input

signals must be stabilized for long enough to meet the TAPs

input data capture setup plus hold time (tCS plus tCH). The RAMs

clock inputs need not be paused for any other TAP operation

except capturing the I/O ring contents into the boundary scan

boundary scan register between the TDI and TDO balls.

1 0 1 RESERVED

1 1 0 RESERVED

1 1 1 BYPASS The BYPASS instruction is loaded in the instruction register

when the bypass register is placed between TDI and TDO.

This occurs when the TAP controller is moved to the shift-DR

state. This allows the board level scan path to be shortened to

facilitate testing of other devices in the scan path.

Notes: 1. Data in output register is not guaranteed if EXTEST instruction is loaded.

2. After performing EXTEST, power-up conditions are required in order to return part to normal

operation.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 26 of 31

ID Register

Part Revision number

(31:29)

Type number (28:12) Vendor JEDEC code

(11:1) Start

bit (0)

HM66AQB36104 000 00010011010101010 00000000111 1

HM66AQB18204 000 00010010010101010 00000000111 1

HM66AQB9404 000 00010000010101010 00000000111 1

HM66AQB8404 000 00010001010101010 00000000111 1

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 27 of 31

Boundary Scan Order

Signal names Signal names

Bit # Ball ID ×

××

×8 ×

××

×9 ×

××

×18 ×

××

×36 Bit # Ball ID ×

××

×8 ×

××

×9 ×

××

×18 ×

××

×36

1 6R C C C C 36 10E D2 D2 D6 D6

2 6P C C C C 37 10D NC NC NC D15

3 6N SA SA SA SA 38 9E NC NC NC Q15

4 7P SA SA SA SA 39 10C NC NC Q7 Q7

5 7N SA SA SA SA 40 11D NC NC D7 D7

6 7R SA SA SA SA 41 9C NC NC NC D16

7 8R SA SA SA SA 42 9D NC NC NC Q16

8 8P SA SA SA SA 43 11B Q3 Q3 Q8 Q8

9 9R SA SA SA SA 44 11C D3 D3 D8 D8

10 11P NC Q8 Q0 Q0 45 9B NC NC NC D17

11 10P NC D8 D0 D0 46 10B NC NC NC Q17

12 10N NC NC NC D9 47 11A CQ CQ CQ CQ

13 9P NC NC NC Q9 48 10A SA SA NC NC

14 10M NC NC Q1 Q1 49 9A SA SA SA SA

15 11N NC NC D1 D1 50 8B SA SA SA SA

16 9M NC NC NC D10 51 7C SA SA SA SA

17 9N NC NC NC Q10 52 6C NC NC NC NC

18 11L Q0 Q0 Q2 Q2 53 8A R R R R

19 11M D0 D0 D2 D2 54 7A NC NC NC BW1

20 9L NC NC NC D11 55 7B NW0 BW BW0 BW0

21 10L NC NC NC Q11 56 6B K K K K

22 11K NC NC Q3 Q3 57 6A K K K K

23 10K NC NC D3 D3 58 5B NC NC NC BW3

24 9J NC NC NC D12 59 5A NW1 NC BW1 BW2

25 9K NC NC NC Q12 60 4A W W W W

26 10J Q1 Q1 Q4 Q4 61 5C SA SA SA SA

27 11J D1 D1 D4 D4 62 4B SA SA SA SA

28 11H ZQ ZQ ZQ ZQ 63 3A SA SA SA NC

29 10G NC NC NC D13 64 2A V

S V

SS V

30 9G NC NC NC Q13 65 1A CQ CQ CQ CQ

31 11F NC NC Q5 Q5 66 2B NC NC Q9 Q18

32 11G NC NC D5 D5 67 3B NC NC D9 D18

33 9F NC NC NC D14 68 1C NC NC NC D27

34 10F NC NC NC Q14 69 1B NC NC NC Q27

35 11E Q2 Q2 Q6 Q6 70 3D NC NC Q10 Q19

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 28 of 31

Signal names Signal names

Bit # Ball ID ×

××

×8 ×

××

×9 ×

××

×18 ×

××

×36 Bit # Ball ID ×

××

×8 ×

××

×9 ×

××

×18 ×

××

×36

71 3C NC NC D10 D19 91 2L Q6 Q6 Q15 Q24

72 1D NC NC NC D28 92 3L D6 D6 D15 D24

73 2C NC NC NC Q28 93 1M NC NC NC D33

74 3E Q4 Q4 Q11 Q20 94 1L NC NC NC Q33

75 2D D4 D4 D11 D20 95 3N NC NC Q16 Q25

76 2E NC NC NC D29 96 3M NC NC D16 D25

77 1E NC NC NC Q29 97 1N NC NC NC D34

78 2F NC NC Q12 Q21 98 2M NC NC NC Q34

79 3F NC NC D12 D21 99 3P Q7 Q7 Q17 Q26

80 1G NC NC NC D30 100 2N D7 D7 D17 D26

81 1F NC NC NC Q30 101 2P NC NC NC D35

82 3G Q5 Q5 Q13 Q22 102 1P NC NC NC Q35

83 2G D5 D5 D13 D22 103 3R SA SA SA SA

84 1H DOFF DOFF DOFF DOFF 104 4R SA SA SA SA

85 1J NC NC NC D31 105 4P SA SA SA SA

86 2J NC NC NC Q31 106 5P SA SA SA SA

87 3K NC NC Q14 Q23 107 5N SA SA SA SA

88 3J NC NC D14 D23 108 5R SA SA SA SA

89 2K NC NC NC D32

90 1K NC NC NC Q32 109  INTER-

NAL INTER-

NAL

Note: In boundary scan mode,

1. Clock balls (K / K, C / C) are referenced to each other and must be at opposite logic levels for

reliable oper atio n.

2. CQ and CQ data are synchronized to the respective C and C.

3. If C and C tied high, CQ is generated with respect to K and CQ is generated with respect to K.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 29 of 31

TAP Controller State Diagram

111

10 10

Test-Logic-

Reset

Run-Test/

Idle Select-

DR-Scan

Capture-DR

Shift-DR

Exit1-DR

Pause-DR

Exit2-DR

Update-DR

Capture-IR

Shift-IR

Exit1-IR

Pause-IR

Exit2-IR

Update-IR

Select-

IR-Scan

Notes: The value adjacent to each state transition in this figure represents the signal present

at TMS at the time of a rising edge at TCK.

No matter what the original state of the controller, it will enter Test-Logic-Reset when

TMS is held high for at least five rising edges of TCK.

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 30 of 31

Package Dimensions

HM66AQB36104/18204/9404/8404BP (BP-165A)

15.00 ± 0.20

17.00 ± 0.20

0.25 C C

0.10 C

0.40 ± 0.06

1.44 ± 0.10

1234567

910

165 × φ0.50 ± 0.05

Unit: mm

Hitachi Code

JEDEC

JEITA

Mass

(reference value)

BP-165A

–

14 × 1.00

10 × 1.00

Preliminary

HM66AQB36104/18204/9404/8404

Rev.0.2, Jan. 2003, page 31 of 31

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third pa rty’s rig hts, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability o r where its failure or malfunction may directly threaten human life or cau se r isk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

condition s and o th e r characteristics. Hitachi b ear s no responsibility for f ailure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval f r om Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Sales Offices

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For further information write to:

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