MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(1/5)
June/2004
June/2004
DESCRIPTION
The MGF4953A/MGF4954A super-low noise HEMT (High
Electron Mobility Transistor) is designed for use in C to K band
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
Low noise figure @ f=12GHz
MGF4953A : NFmin. = 0.40dB (Typ.)
MGF4954A : NFmin. = 0.60dB (Typ.)
High associated gain @ f=12GHz
Gs = 13.5dB (Typ.)
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel 3000pcs./reel
ABSOLUTE MAXIMUM RATINGS (Ta=25°C )
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-4
V
VGSO
Gate to source voltage
-4
V
ID
Drain current
60
mA
PT
Total power dissipation
50
mW
Tch
Channel temperature
125
°C
Tstg
Storage temperature
-65 to +125
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C )
Synbol
Test conditions
Limits
Unit
MIN.
TYP.
MAX
V(BR)GDO
IG=-10µA
-3
--
--
V
IGSS
VGS=-2V,VDS=0V
--
--
50
µA
IDSS
VGS=0V,VDS=2V
15
--
60
mA
VGS(off)
VDS=2V,ID=500µA
-0.1
--
-1.5
V
gm
VDS=2V,ID=10mA
--
70
--
mS
Gs
VDS=2V,
12.0
13.5
--
dB
NFmin.
ID=10mA
MGF4953A
--
0.40
0.50
dB
f=12GHz
MGF4954A
--
0.60
0.80
dB
Outline Drawing
Fig.1
MITSUBISHI Proprietary
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(2/5)
June/2004
June/2004
Fig.1
Top
Side
Bottom
➀
➁
ç
ç
from "A" side view







ç
ç
©
©

ç

➂
➁
Square shape electrode is Drain
➀
➁
➁
➂
rwGate
swSource
twDrain
B 0
Unit : mm
2 E G
r
s
s
t
r
s
s
t
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(3/5)
June/2004
June/2004
TYPICAL CHARACTERISTICS (Ta=25°C)
I
D
vs. V
DS
0
10
20
30
40
50
60
0
1
2
3
4
5
§_®x· t
F
ö
ww
V
DS
(V)
§_®
y
w
ID(mA)
Ta=25
`
V
GS
=-0.1V/STEP
I
D
VS. V
GS
-1.0
-0.5
0.0
%o;n0o,
F
ö
V
GS
(V)
§_®
y
ID(mA)
Ta=25
`
V
DS
=2V
NF & Gs VS. ID
(MGF4953A)












§_®
y
ID (mA)
¸
0
NF (dB)







¸
¨
Ê
Ñ
ç
)UF$
Ta=25
`
V
DS
=2V
f=12GHz
0(
)U
DRAIN CURRENT ID(mA)
DRAIN TO SOURCE VOLTAGE VDS(V)
GATE TO SOURCE VOLTAGE VGS(V)
DRAIN CURRENT ID(mA)
DRAIN CURRENT ID(mA)
ASSOCIATED GAIN Gs(dB)
NOISE FIGURE NF(dB)
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(4/5)
June/2004
June/2004
S PARAMETERS (Ta=25°C,VDS=2V,ID=10mA)
NOISE PARAMETERS (Ta=25°C,VDS=2V,ID=10mA)
Note) Rn is normalized by 50-ohm
f
Gamma-opt
Rn
NFmin.
Gs
(GHz)
Magn.
Angle
(ohm)
(dB)
(dB)
4
0.64
52.7
0.27
0.22
18.3
8
0.61
103.5
0.15
0.28
15.9
12
0.55
146.4
0.06
0.35
13.5
14
0.51
161.9
0.04
0.39
12.5
18
0.41
175.3
0.03
0.48
11.0
20
0.35
-177.3
0.05
0.55
10.5
Reference Point
Reference Point
Gate
Drain
Source
Source
Freq
S11
S21
S12
S22
(GHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
1
0.911
-12.7
4.924
168.1
0.008
70.3
0.709
-10.7
2
0.894
-29.2
4.806
155.3
0.031
68.8
0.691
-22.7
3
0.875
-40.7
4.796
142.7
0.043
62.2
0.682
-30.1
4
0.858
-53.9
4.672
131.6
0.061
49.4
0.652
-41.7
5
0.830
-66.5
4.524
121.2
0.066
42.9
0.639
-49.6
6
0.797
-77.7
4.308
109.5
0.073
33.5
0.631
-58.5
7
0.770
-87.0
4.114
101.1
0.080
26.2
0.628
-64.4
8
0.751
-94.2
3.984
90.8
0.089
22.1
0.625
-71.0
9
0.727
-103.0
3.886
81.4
0.090
17.4
0.624
-76.1
10
0.713
-110.8
3.881
75.0
0.101
9.2
0.628
-80.4
11
0.686
-119.9
3.886
66.0
0.110
2.2
0.612
-87.5
12
0.636
-132.8
3.937
54.7
0.120
-4.6
0.581
-94.3
13
0.590
-146.6
4.078
45.0
0.127
-13.0
0.540
-101.0
14
0.538
-165.8
4.163
31.5
0.136
-25.2
0.485
-112.5
15
0.507
170.2
4.239
18.9
0.144
-35.8
0.396
-122.4
16
0.506
140.8
4.238
4.5
0.151
-48.2
0.283
-137.3
17
0.552
110.4
4.067
-10.5
0.151
-62.0
0.159
-162.3
18
0.625
86.0
3.791
-26.5
0.145
-74.0
0.076
120.8
19
0.696
65.9
3.428
-40.5
0.137
-85.8
0.164
54.1
20
0.745
50.8
3.045
-54.3
0.118
-97.6
0.271
31.6
21
0.791
38.2
2.677
-66.5
0.109
-106.8
0.375
20.9
22
0.794
28.2
2.281
-76.2
0.102
-114.0
0.455
14.3
23
0.776
18.4
1.984
-84.5
0.091
-118.9
0.539
8.5
24
0.802
11.0
1.828
-93.8
0.078
-127.7
0.607
5.7
25
0.796
2.9
1.626
-102.1
0.071
-130.2
0.675
2.1
26
0.799
-8.5
1.424
-114.5
0.064
-138.3
0.730
0.9
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
MITSUBISHI
(5/5)
June/2004
June/2004
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however,
there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this
reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention
design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents
involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in
use by customers.
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