Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS 30V
▼ Simple Drive Requirement RDS(ON) 50mΩ
▼ Fast Switching Characteristic ID12.5A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 10 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data & specifications subject to change without notice
Thermal Data
Parameter
Operating Junction Temperature Range
Linear Derating Factor 0.1
Storage Temperature Range
Continuous Drain Current 8
Pulsed Drain Current140
Total Power Dissipation 12.5
-55 to 150
Gate-Source Voltage +20
Continuous Drain Current 12.5
Parameter Rating
RoHS-compliant Product
Drain-Source Voltage 30
AP20T03GH/J
200902104
1
-55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP20T03GJ) is
available for low-profile applications.
GDSTO-251(J)
GDSTO-252(H)
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 -V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=8A - - 50 mΩ
VGS=4.5V, ID=5A - - 80 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=5V, ID=5A - 6 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=125oC) VDS=24V, VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=10A - 4 7 nC
Qgs Gate-Source Charge VDS=24V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2.3 - nC
td(on) Turn-on Delay Time2VDS=15V - 6 - ns
trRise Time ID=10A - 30 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 10 - ns
tfFall Time RD=1.5Ω-3-
ns
Ciss Input Capacitance VGS=0V - 270 430 pF
Coss Output Capacitance VDS=25V - 70 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF
RgGate Resistance f=1.0MHz - 1.6 2.4 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=5A, VGS=0V - - 1.3 V
trr Reverse Recovery Time2IS=10A, VGS=0V, - 16 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP20T03GH/J
3.Surface mounted on 1 in2 copper pad of FR4 board
AP20T03GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
2
4
6
8
10
12
14
16
18
20
0.0 0.5 1.0 1.5 2.0 2.5
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
7.0V
5.0V
4.5V
VG=3.0V
0
2
4
6
8
10
12
14
16
18
0112233
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
10V
7.0V
5.0V
4.5V
VG=3.0V
TC=150oC
0.5
0.8
1.0
1.3
1.5
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=8A
VG=10V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Is (A)
Tj=25oCTj=150oC
1.0
1.5
2.0
2.5
-50 0 50 100 150
Tj ,Junction Temperature ( oC)
VGS(th) (V)
35
45
55
65
75
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON)(m
Ω
)
I
D=5A
TC=25oC
AP20T03GH/J
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
12
14
036912
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =15V
VDS =20V
VDS =24V
ID=10A
10
100
1000
1 5 9 1317212529
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
0.1
1
10
100
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
