N AMER PHILIPS/DISCRETE 25 D Mil 6653931 0022563 0 mm BYV32F SERIES 7203-/7 ULTRA FAST-RECOVERY ELECTRICALLY -ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 (full-pack) plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery characteristic. Their electrical isolation makes them ideal for mounting on a common heatsink along- side other components without the need for additional insulators. They are intended for use in switched-mode power supplies and high-frequency circuits in general, where both low conduction and switching losses are essential. Their single chip construction ensures excellent matching of the forward and switching characteristics of the two halves, allowing parallel operation without the need for derating. The series consists of common cathode types. QUICK REFERENCE DATA Per diode, unless otherwise stated BYV32F-50 | 100 | 150 | 200 Repetitive peak reverse voltage VRRM max. 50 | 100 | 150 | 200 V Output current (both diodes conducting) lo max, 12 A Forward voltage VE < 0.85 Vv Reverse recovery time ter < 25 ns MECHANICAL DATA r 10.2 max>} Dimensions in mm Fig.1 SOT-186 (full-pack) 5.7 max}~ a Bo Hae | a8 Laan | | i ' 44 } nD. 40 [1] 29 a, t J seatin 17 planes max May) 3a) | 3.5 f not tinned 4.4 + hay i 2(k) M2341 1.5 max 135 14 2p] 3p: weez@-|l; Il o8 i 0s5mox a [esa thts > <_ 42295 | fs top view Net mass: 2 g. The seating plane is electrically isolated from all terminals. Accessories supplied on request (see data sheets Mounting instructions for F-pack devices and Accessories for SOT-186 envelopes). June 1986 363N AMER PHILIPS/DISCRETE BYV32F SERIES J L RATINGS 2eSE dD M 6453931 0022564 2 mi Limiting values in accordance with the Absolute Maximum System (IEC 134). Voltages (per diode; see note 1) Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Currents (see notes 2 and 3) Output current, switching losses negligible up to 500 kHz square wave; 6 = 0.5; up to Ty = 92 OC sinusoidal; up to Th = 100 C R.M.S, forward current Repetitive peak forward current tp = 20 us, 6 = 0.02 (per diode) Non-repetitive peak forward current half sine-wave; Tj = 150 C prior to surge; with reapplied Vawm max: t= 10 ms (per diode) t = 8.3 ms (per diode) I? t for fusing (t = 10 ms; per diode) Temperatures Storage temperature Junction temperature ISOLATION Peak isolation voltage from ail terminals to external heatsink Isolation capacitance from cathode to external heatsink (see note 4) Notes VRRM VRWM VR lo lo lF(RMS) 'FRM lFSM FSM it T-03-17 BYV32F-50 | 100 | 150 | 200 max. max. max. max. max, max. max. max, max. max. max. typ. 50 100 200 V 50 100 200 V 50 100 200 V en, 12 A 10.6 A 12 A 155 A 150 A 160 A 112 As 40 to +150 oC 150 9 1000 Vv 12 pF 1. To ensure thermal stability: Rth j-a < 6.3 K/W for continuous reverse voltage. 2. The limits for both diodes apply whether both diodes conduct simultaneously or on alternate half cycles. 3. The quoted temperatures assume heatsink compound is used. 4. Mounted without heatsink compound and with 20 Newtons pressure on the centre of the envelope. 364 June 1986N AMER PHILIPS/DISCRETE CSE D MM 6653931 0022565 4 mm Ultra fast-recovery, isolated double rectifier diodes BYV32F SERIES T-03-17 THERMAL RESISTANCE From junction to external heatsink with minimum of 2 kgf (20 Newtons) pressure on the centre of the envelope, total pack age: without heatsink compound Rthj-h with heatsink compound Rth j-h 7.0 K/W 5.0 K/W nou Free-air operation The quoted value of Rip j-a should be used only when no leads of other dissipating components run to the same point. Thermal resistance from junction to ambient in free air, device mounted on a printed circuit board Rthj-a = 55 K/W CHARACTERISTICS Forward voltage Ip =5 A; Tj = 100 9C VE < 0.85 ve ip = 20A; Tj = 25 C VE < 1.15 v* Reverse current Va = VRWM max: 7j = 100 OC IR < 0.6 mA Vr = 200 V; Tj = 25 OC IR < 30 pA <+ VR S150 V; Tj = 25 C IR < 10 pA Reverse recovery when switched from Ip =1A to Vp 2 30 V with di/dt = 100 A/us; Tj = 25 C; recovery time ter < 25 ns le =2A to Vp 2 30 V with dl /dt = 20 A/us; Tj = 25 C; recovered charge Q, < 12.5 nc IF = 10A to Vp = 30 V with dlp/dt= 50 A/us; Tj = 100 C; peak recovery current IRRM < 2 A Forward recovery when switched tole =1A with dl p/dt = 10 A/us; Tj = 25 OC Ver typ. 1 Vv M801319/3 IF 1 F Ir aI \ at ter T10% 4 time time 4 dla 10 %o VE _ a2 dt I RRM Vir lp M1247 100% Fig.2 Definition of tpr, Q, and [pRM. t time *Measured under pulse conditions to avoid excessive dissipation. Fig.3 Definition of V,. dune 1989 365 = voowe 5 come were eee ee eeeN AMER PHILIPS/DISCRETE 2SE D MM 6653931 0022566 b mm BYV32F ae L T-03-17 MOUNTING INSTRUCTIONS 1. The device may be soldered directly into the circuit, but the maximum permissible temperature of the soldering iron or bath is 275 C; the heat source must not be in contact with the joint for more than 5 seconds. Soldered joints must be at least 4.7 mm from the seal. . The leads should not be bent less than 2.4 mm from the seal, and should be supported during bending. The bend radius must be no less than 1 mm. . Mounting by means of a spring clip is the best mounting method because it offers a good thermal contact under the crystal area and slightly lower Rth j-h Values than screw mounting. The force exerted on the top of the device by the clip should be at least 2 kgf (20 Newtons) to ensure good thermal contact and must not exceed 3.5 kgf (35 Newtons) to avoid damage to the device. . If screw mounting is used, it should be M3 cross-recess pan head. Minimum torque to ensure good thermal contact: 5.5 kgf (0.55 Nm) Maximum torque to avoid damage to the device: 8.0 kgf (0.80 Nm) . For good thermal contact, heatsink compound should be used between baseplate and heatsink. Values of Rth j-h given for mounting with heatsink compound refer to the use of a metallic-oxide loaded compound. Ordinary silicone grease is not recommended. . Rivet mounting. it is not recommended to use rivets, since extensive damage could result to the plastic, which could destroy the insulating properties of the device. . The heatsink must have a flatness in the mounting area of 0.02 mm maximum per 10mm. Mounting holes must be deburred. OPERATING NOTES Dissipation and heatsink considerations: a. b. The various components of junction temperature rise above ambient are iNustrated in Fig.4: junction 1 junction 2 1.6K/W | | Rth j-h | mounting base Rth j~a (inaccessible) 3.4K/W (with heatsink compound) 5.4K/W (without heatsink compound) | heatsink | Rth ha | Figg me ea me ne a ee ne me J ambient M2342 Any measurement of heatsink temperature should be immediately adjacent to the device. 366 June 1986 Teeter cn ee ee ere ne = Set rere ee ee eeN AMER PHILIPS/DISCRETE 25 D MM 6653931 O0ccSt? & my Ultra fast-recovery, isolated double rectifier diodes BYV32F SERIES T-03-17 SQUARE-WAVE OPERATION M2343 Fig.5 Power rating. The individual power loss in each diode should first be determined from the required forward current on the If(Ay) axis and the appropriate duty cycle, then both added together to give a total power loss for the whole device. Having determined this power (P), use Fig.7 (if heatsink compound fs not being used) or Fig.8 (if heatsink compound is being used) to determine the heatsink size and corresponding maximum ambient and heatsink temperatures. Note: P = power including reverse current losses but excluding switching losses. ' t bert te [Ls vi ned | 0 5 0 15 _ . lE(ayylA) le(av) = !e(RMs) X*V8- SINUSOIDAL OPERATION M2344 Fig.6 Power rating. The individual power loss in each diode should first be determined from the required forward current on the te(ay) axis and the appropriate form factor, then both added together to give a total power loss for the whole device. Having determined this power (P), use Fig.7 (if heatsink compound is not being used) or Fig.8 (if heatsink compound is being used) to determine the heatsink size and corresponding maximum ambient and heatsink temperatures. Note: P = power including reverse current losses but excluding switching losses, a= form factor = le; RMs)/tE(AV) o a a > S$ Es 3 | (1 1986 367N AMER PHILIPS/DISCRETE 25E D MM 6653931 0022568 T my BYV32F SERIES T~03-17 Fig.7 Heatsink rating. 15 Without heatsink compound. P Th (Ww) (C) 10 80 5 115 0 150 0 100 Tamb(C) 200 M2809 15 75 Fig.8 Heatsink rating. With heatsink compound. P T h (w) 12) 10 100 5 125 0 150 0 100 Tamp(C) 200 368 June 1986 a_ tt a N AMER PHILIPS/DISCRETE CSE D MM 6653931 0022549 1 Ultra fast-recovery, isolated double rectifier diodes BYV32F SERIES T-03-17 103 M2347 leRM (A) 102 10 10-1 1 10 ty/T(%) 102 Fig.9 Maximum permissible repetitive peak forward current for either square or sinusoidal currents for lus<tp <1 ms. IF 1 ~7\] IEFRM I I time han T M1246 Definition of IF RIy and tp/T M1719 15 (A) 10 Fig.10 Tj = 25 C; -~ Tj = 150 C per diode. 0 1 Ve lv) 2 June 1986 369N AMER PHILIPS/DISCRETE 25 ) MM 6653931 0022570 & me BYV32F SERIES T-03-17 M2485 103 103 tr (ns) tr (ns) 102 102 10 10 1 1 2 1 10 dig/dt(A/us) 102 1 10 dl_/dt(A/us) 10 Fig.11 Maximum try at Tj = 25 C. Fig.12 Maximum ty; at Tj = 100 C, 103 Q, (nC) 102 10 Fig.13 Maximum Qg at Tj = 25 C, 1 10 ~dig/dt(A/us) 102 370 June 1 =e | (N AMER PHILIPS/DISCRETE OSE D MM 6653931 0022571 T mm Ultra fast-recovery, isolated double rectifier diodes BYV32F SERIES T-03-17 10 M2488 10 M2489 IRRM IRRM (A) (A) 1 1 107! 10-1 10-2 10-2 1 10 dig/dt(A/us) 102 1 10 dlp/dt(A/us) 102 Fig.14 Maximum IR RM at Tj = 25 OC Fig.15 Maximum Ira at Tj = 100 C; M2350 102 2th j-h (K/W) 10 1 10-1 1072 10-6 10-4 10-3 1072 10-1 1 time(s) 10 Fig.16 One diode conducting; with heatsink compound: without heatsink compound. | (sm 1986 371