NTE5427 thru NTE5429 Silicon Controlled Rectifier (SCR) 7 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Off-State Voltage (TC = +110C), VDRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (TC = +80C, Conduction Angle of 180), IT(RMS) . . . . . . . . . . . . . . . . . . . 7A Peak Surge (Non-Repetitive) On-State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . 80A Peak Gate-Trigger Current (3s Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak Gate-Power Dissipation (IGT IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +110C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Typical Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Peak Off-State Current Symbol IRRM IDRM Maximum On-State Voltage DC Holding Current VTM Test Conditions Min Typ Max Unit VRRM = Max, VDRM = Max, TC = +110C, RGK = 1k - - 1 mA - - 1 mA IT = 7A - - 2 V - - 50 mA IHOLD DC Gate-Trigger Current IGT VD = 6VDC, RL = 100 - - 25 mA DC Gate-Trigger Voltage VGT VD = 6VDC, RL = 100 - - 1.5 V Gate Controlled Turn-On Time tgt IG x 3GT - 2 - s I2t for Fusing Reference I2t For SCR Protection - - 2.6 A2sec - 100 - V/s Critical Rate of Off-State Voltage dv/dt Gate Open, TC = +100C (critical) .352 (8.95) Dia Max .325 (8.13) Dia Max .250 (6.35) Max 1.500 (38.1) Min .019 (0.5) Gate Cathode Anode 45 .031 (.793)