NTE5427 thru NTE5429
Silicon Controlled Rectifier (SCR)
7 Amp
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +110°C), VRRM
NTE5427 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5428 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5429 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Off–State Voltage (TC = +110°C), VDRM
NTE5427 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5428 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5429 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +80°C, Conduction Angle of 180°), IT(RMS) 7A. . . . . . . . . . . . . . . . . . .
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), ITSM 80A. . . . . . . . . . .
Peak Gate–Trigger Current (3µs Max), IGTM 1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate–Power Dissipation (IGT ≤ IGTM), PGM 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, PG(AV) 500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, Topr –40° to +110°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Case, RthJC 2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current IRRM VRRM = Max, VDRM = Max,
° Ω
– – 1 mA
IDRM TC = +110°C, RGK = 1kΩ– – 1 mA
Maximum On–State Voltage VTM IT = 7A – – 2 V
DC Holding Current IHOLD – – 50 mA
DC Gate–Trigger Current IGT VD = 6VDC, RL = 100Ω– – 25 mA
DC Gate–Trigger Voltage VGT VD = 6VDC, RL = 100Ω– – 1.5 V
Gate Controlled Turn–On Time tgt IG x 3GT – 2 – µs
I2t for Fusing Reference I2tFor SCR Protection – – 2.6 A2sec
Critical Rat e of Off–State Voltage dv/dt
(critical) Gate Open, TC = +100°C – 100 – V/µs
.250
(6.35)
Max
1.500
(38.1)
Min
.352 (8.95) Dia Max
.325 (8.13) Dia Max
45°
.031 (.793)
Cathode
Gate
Anode
.019 (0.5)
