Spec.No.IGBT-SP-02006 R5 IGBT MODULE MBN1800E17D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. (delta Tc=70C, N>30,000cycles) Isolated heat sink (terminal to base). Unit in mm Weight : 1300(g) o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.80.2/91N*m Unit MBN1800E17D V V 1,700 20 1,800 A 3,600 1,800 A 3,600 o C -40 ~ +125 o C -40 ~ +125 VRMS 4,000(AC 1 minute) 2/10 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions 10 VCE=1,700V, VGE=0V, Tj=25oC Collector Emitter Cut-Off Current I CES mA 15 50 VCE=1,700V, VGE=0V, Tj=125oC Gate Emitter Leakage Current IGES nA -500 +500 VGE=20V, VCE=0V, Tj=25oC Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.3 IC=1,800A, VGE=15V, Tj=125oC Gate Emitter Threshold Voltage VGE(TO) V 5.0 6.5 8.0 VCE=10V, IC=180mA, Tj=25oC Input Capacitance Cies nF 150 VCE=10V, VGE=0V, f=100kHz, Tj=25oC o Internal Gate Resistance Rge 0.6 VCE=10V, VGE=0V, f=100kHz, Tj=25 C Rise Time tr 0.7 1.4 VCC=900V, Ic=1,800A Turn On Time ton 1.2 2.4 L=55nH,CGE=180nF(TBD) (3) Switching Times s Fall Time tf 0.2 0.4 RG=1.5(TBD) (3) o Turn Off Time toff 1.5 3.0 VGE=15V, Tj=125 C o Peak Forward Voltage Drop VFM V 1.9 2.5 Ic=1,800A, VGE=0V, Tj=125 C Reverse Recovery Time trr s 0.7 1.4 VCC=900V, Ic=1,800A Turn On Loss Eon(10%) J/P 0.48 0.77 L=55nH,CGE=180nF(TBD) (3) Turn Off Loss Eoff(10%) J/P 0.52 0.8 RG=1.5(TBD) (3) o Reverse Recovery Loss Err(10%) J/P 0.62 1.0 VGE=15V, Tj=125 C Stray inductance module LSCE nH 12 IGBT Rth(j-c) o 0.013 C/W Junction to case Thermal Impedance 0.022 FWD Rth(j-c) o Contact Thermal Impedance Rth(c-f) C/W 0.006 Case to fin Notes:(3) RG and CGE value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG and CGE value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/