KE C SEMICONDUCTOR MPSA56 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURES * Complementary to MPSA06. s ry MAXIMUM RATINGS(Ta=25C) ; CHARACTERISTIC SYMBOL | RATING | UNIT ; 4d ft PS ea | oJ B 4.80 MAX Collector-Base Voltage Vezo -80 Vv D- = > eS | E 1.00 Collector-Emitter Voltage Vero -80 Vv | < I | LL H 0.45 Emitter-Base Voltage Viso -5 Vv . H . L 14.005 0.50 L 2.30 Collector Current Ic -500 mA M 0.45 MAX @ a. o N 1.00 Emitter Current Ip 500 mA iN 47 4 1. mormer 2. BASE Collector Power Dissipation Pe 625 mW 3. COMLECTOR Junction Temperature T; 150 Cc TO92 Storage Temperature Range Tstg -55 ~ 150 Cc ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current Tcrno Vcn=-80V, In=0 - - -100 nA Emitter Cut-off Current Tcxo Vcr=-60V, Ip=0 - - -100 nA Collector-Emitter Breakdown Voltage V ipRckO Ic=-lmA, Ip=0 -80 - - Vv hee) Vcr=-1V, Ic=-10mA 100 - - DC Current Gain hrr(2) Vcr=-l1lVv, Ic=-100mA 100 _ _ Collector-Emitter Saturation Voltage V crlsat) Ic=-100mA, Ip=-10mA - - -0.25 Vv Base-Emitter Voltage Var Vcer=-1V, Ic=-100mA - - -1.2 Vv Transition Frequency fr Vce=-1V, In=0, Ic=-100mA 50 - - MHz 1999. 11. 30 Revision No : 3 KEC V1