. ff RS3A/BRS3M/B VISHAY Vishay Lite-On Power Semiconductor 3.0A Surface Mount Fast Recovery Rectifiers Features @ Glass passivated die construction Fast recovery time for high efficiency Low forward voltage drop and high current capability Surge overload rating to 100A peak Ideally suited for automated assembly Plastic material - UL Recognition flammability classification 94V-0 14 429 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage RS3A/AB Vrru 50 Vv =Working peak reverse voltage RS3B/BB | =Vrawm 100 Vv =DC Blocking voltage RS3D/DB =VpR 200 V RS3G/GB 400 Vv RS3J/JB 600 Vv RS3K/KB 800 Vv RS3M/MB 1000 Vv Peak forward surge current lesm 100 A Average forward current Ty=75C lFay 3 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage IpF=3A Ve 1.3 Vv Reverse current Tp=25C IR 5 uA Ta=1 25C IR 250 uA Reverse recovery time |IR=1A, Ir=0.5A, RS3A/AB-G/GB ter 150 | ns 1=0.25A RS3J/JB tie 250 | ns RS3K/KBM/MB ter 500 | ns Diode capacitance VpR=4V, f=1MHz Cp 50 pF Thermal resistance on PC board with Rthut 25 KW junction to terminal 5mm? Rev. A2, 24-Jun-98 1 (4) RS3A/BRS3M/B Vishay Lite-On Power Semiconductor VISHAY Characteristics (Tj = 25C unless otherwise specified) leay Average Forward Current (A) 16482 Figure 1. Max. Average Forward Current vs. | Forward Current (A) 15483 Figure 2. Typ. Forward Current vs. Forward Voltage 3.0 2.5 2.0 15 1.0 0.5 0 10 1.0 0.1 0,01 25 50 75 100 125 = 150 175 Tamb Ambient Temperature ( C ) Ambient Temperature Tj = 25C l= Pulse Width = 300 ps 0.4 0.8 1.2 Ve Forward Voltage ( V ) 1.6 lesy Peak Forward Surge Current (A) 15484 Single Half Sine-Wave (JEDEC Method) 100 Ny 80 NI NN MN " IMM ~~ 40 set 20 0 1 10 100 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles |, Reverse Current (uA) 15485 1000 100 10 1.0 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage Rev. A2, 24-Jun-98 . RS3A/BRS3M/B VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm D / os "BY Suffix Designates SMB Package __|4 No Suffix Designates SME Package E =} > technical drawings 1p } < scrdig BW B SMB SMC Uim Min Max Min Max A 3.30 3.94 5.59 6.22 B 4.06 45] 6.60 1A ( 1.96 2.2| 2.15 3.18 [ 0.15 0.31 0.15 0.31 E 5.00 5.59 715 8.13 G 0.10 0.20 0.10 0.20 H 0). /6 1.52 0./6 1.52 J 2.00 2.62 2.00 2.62 All Dimensions in mm Case: molded plastic Polarity: cathode band or cathode notch Approx. weight: SMB 0.09 grams, SMC 0.20 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4) RS3A/BRS3M/B Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98