MCT6, MCT61, MCT62, MCT66 MCT6X, MCT61X, MCT62X, MCT66X HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS z UL recognised, File No. E91231 Dimensions in mm 2.54 Package Code " FF " 7.0 6.0 'X' SPECIFICATIONAPPROVALS z VDE 0884 in 3 available lead form :- STD - G form - SMD approved to CECC 00802 DESCRIPTION The MCT6, MCT61, MCT62 & MCT66 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages mounted two channels per unit. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kVRMS ) APPLICATIONS Computer terminals z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances 1 8 2 3 7 6 5 4 1.2 10.16 9.16 7.62 4.0 3.0 13 Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTEMAXIMUMRATINGS (25C unless otherwise specified) Storage Temperature -40C to + 125C Operating Temperature -25C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUTDIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current Power Dissipation 30V 6V 50mA 150mW z OPTION SM OPTION G SURFACE MOUNT 7.62 POWER DISSIPATION Total Power Dissipation 170mW (derate linearly 2.67mW/C above 25C) 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 17/7/08 DB92012 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Output Coupled MIN TYP MAX UNITS Forward Voltage (VF) 1.5 V IF = 20mA Reverse Current (IR) 10 A VR = 3V 100 V V nA IC = 1mA (note 2) IE = 100A VCE = 10V % % % % 10mA IF , 10V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 10mA IF , 10V VCE V V VRMS 16mA IF , 2mA IC 40mA IF , 2mA IC See note 1 VIO = 500V (note 1) s s IC = 2mA, VCE = 2V, RL = 100 (Fig. 1) Collector-emitter Breakdown (BVCEO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) MCT6 MCT61 MCT62 MCT66 Collector-emitter SaturationVoltageVCESAT MCT6,61,62 MCT66 Input to Output Isolation Voltage VISO 30 6 20 50 100 6 0.4 0.4 5300 Input-output Isolation Resistance RISO 5x1010 Output Rise Time, tr Output Fall Time, tf Note 1 Note 2 TEST CONDITION 4 3 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIG. 1 INPUT toff ton tr tf OUTPUT 17/7/08 10% 10% 90% 90% DB92012m-AAS/A4 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage TA = 25C 50 Collector current IC (mA) Collector power dissipation PC (mW) 200 150 100 50 40 50 30 30 20 15 20 10 10 IF = 5mA 0 0 -30 0 25 50 75 100 0 125 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature Relative Current Transfer Ratio vs. Forward Current 60 Relative current transfer ratio Forward current IF (mA) 50 40 30 20 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0 25 50 75 100 125 2 5 10 20 Ambient temperature TA ( C ) Forward current IF (mA) Relative Current Transfer Ratio vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature 1.5 IF = 10mA VCE = 10V 1.0 0.5 0 -30 1 0 25 50 75 Ambient temperature TA ( C ) 100 Collector-emitter saturation voltage VCE(SAT) (V) Relative current transfer ratio -30 17/7/08 VCE = 10V TA = 25C 50 0.28 0.24 IF = 16mA IC = 2mA 0.20 0.16 0.12 0.08 0.04 0 -30 0 25 50 75 100 Ambient temperature TA ( C ) DB92012m-AAS/A4