ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road W est,
Park V iew Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
17/7/08
OPTION G
7.62
APPROVALS
zUL recognised, File No. E91231
Package Code " FF "
'X' SPECIFICATION APPROV ALS
zVDE 0884 in 3 available lead form :-
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The MCT6, MCT61, MCT62 & MCT66 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages mounted two channels per unit.
FEATURES
zOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
T ape&reel - add SMT&R after part no.
zHigh Isolation Voltage (5.3kVRMS )
APPLICATIONS
zComputer terminals
zIndustrial systems controllers
zMeasuring instruments
zSignal transmission between systems of
different potentials and impedances
HIGH DENSITY
PHOTOTRANSISTOR OPTICALL Y
COUPLED ISOLAT ORS
SURFACE MOUNT
OPTION SM
10.16
0.26
10.16
9.16
7.0
6.0
7.62
1.2
13°
Max
0.5
2.54
0.5
0.26
3.0
4.0
3.0
3.35
36
45
27
18
Dimensions in mm
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -40°C to + 125°C
Operating Temperature -25°C to + 100°C
Lead Soldering T emperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse V oltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter V oltage BVCEO 30V
Emitter-collector V oltage BVECO 6V
Collector Current 50mA
Power Dissipation 150mW
POWER DISSIPATION
T otal Power Dissipation 170mW
(derate linearly 2.67mW/°C above 25°C)
10.46
9.86
0.6
0.1 1.25
0.75
MCT6, MCT61, MCT62, MCT66
MCT6X, MCT61X, MCT62X, MCT66X
DB92012
17/7/08
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.5 V IF = 20mA
Reverse Current (IR)10μAV
R = 3V
Output Collector-emitter Breakdown (BVCEO)30 V I
C = 1mA (note 2)
Emitter-collector Breakdown (BVECO)6 V I
E = 100μA
Collector-emitter Dark Current (ICEO) 100 nA VCE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
MCT6 20 % 10mA IF , 10V VCE
MCT61 50 % 5mA IF , 5V VCE
MCT62 100 % 5mA IF , 5V VCE
MCT66 6 % 10mA IF , 10V VCE
Collector-emitter Saturation Voltage VCESAT
MCT6,61,62 0.4 V 16mA IF , 2mA IC
MCT66 0.4 V 40mA IF , 2mA IC
Input to Output Isolation Voltage V ISO 5300 VRMS See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time, tr 4 μsI
C = 2mA, VCE = 2V ,
Output Fall Time, tf 3 μsR
L = 100Ω (Fig. 1)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
ton toff
10%
90% 90%
trtf
INPUT
OUTPUT
10%
FIG. 1
DB92012m-AAS/A4
17/7/08
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
Forward Current vs. Ambient Temperature
Ambient temperature TA ( °C )
100
0
0.5
1.0
1.5 IF = 10mA
VCE = 10V
Forward current IF (mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100 125
-30 0 25 50 75 100 125
-30 0 25 50 75 100
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
0 2 4 6 8 10
0
10
20
30
40
50 TA = 25°C
10
15
20
30
50
IF = 5mA
Collector Current vs. Collector-emitter Voltage
Collector Power Dissipation vs. Ambient Temperature
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
VCE = 10V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 16mA
IC = 2mA
DB92012m-AAS/A4
