DSI2x55-16A Standard Rectifier VRRM = 1600 V I FAV = 2x VF = 60 A 1.22 V Parallel legs Part number DSI2x55-16A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130307b DSI2x55-16A Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current, drain current VR = 1600 V TVJ = 25C 100 A VR = 1600 V TVJ = 150C 1.5 mA TVJ = 25C 1.26 V 1.54 V 1.22 V VF IF = forward voltage drop min. 55 A typ. I F = 110 A IF = TVJ = 125 C 55 A I F = 110 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 95C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved V 60 A TVJ = 150 C 0.83 V d = 0.5 for power loss calculation only Ptot 1.58 T VJ = 150 C 6.2 m 0.6 K/W K/W 0.10 TC = 25C 210 W t = 10 ms; (50 Hz), sine TVJ = 45C 800 A t = 8,3 ms; (60 Hz), sine VR = 0 V 865 A t = 10 ms; (50 Hz), sine TVJ = 150 C 680 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 735 t = 10 ms; (50 Hz), sine TVJ = 45C 3.20 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 3.12 kAs TVJ = 150 C 2.31 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 2.25 kAs 25 pF 20130307b DSI2x55-16A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 150 Unit A -40 150 C -40 150 C Weight 30 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute 1.1 1.5 1.1 1.5 Nm Nm terminal to terminal 10.5 3.2 mm terminal to backside 8.6 6.8 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Number DSI2x55-16A Similar Part DSI2x55-12A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSI2x55-16A Package SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 483699 Voltage class 1200 T VJ = 150C Rectifier V 0 max threshold voltage 0.83 V R 0 max slope resistance * 4.3 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130307b DSI2x55-16A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130307b DSI2x55-16A Rectifier 120 700 100 104 50 Hz, 80% VRRM VR = 0 V 600 80 TVJ = 45C TVJ = 45C IFSM 500 IF I2t 60 [A] [A] 400 40 TVJ = 150C 103 2 [A s] TVJ = 150C TVJ = 125C 150C 20 300 TVJ = 125C 0 0.4 0.8 1.2 102 200 0.001 1.6 0.01 0.1 1 1 2 3 4 5 6 7 8 910 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode RthHA : 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W dc = 1 0.5 0.4 0.33 0.17 0.08 60 40 Ptot 2 160 dc = 1 0.5 0.4 0.33 0.17 0.08 120 IF(AV)M 80 [A] [W] 20 40 0 0 0 10 20 30 40 50 0 25 50 75 IF(AV)M [A] 100 125 150 175 0 25 50 75 100 125 150 TC [C] Tamb [C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current versus case temperature 0.7 0.6 ZthJC Constants for ZthJC calculation: 0.4 [K/W] 0.2 0.0 1 10 100 1000 i Rthi (K/W) ti (s) 1 0.031 0.00024 2 0.0554 0.0036 3 0.114 0.0235 4 0.281 0.142 5 0.1686 0.7 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130307b